Chemical structure imaging of a single molecule by atomic force microscopy at room temperature von Iwata, Kota, Yamazaki, Shiro, Mutombo, Pingo, Hapala, Prokop, Ondráček, Martin, Jelínek, Pavel, Sugimoto, Yoshiaki

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Variation of the 4 × 1 to 8 × 2 structural transition temperature of quasi-one-dimensional indium chains upon carrier doping from Si(111) substrates von Ogino, Takahiro, Kuzumo, Valentin Motoi, Yamazaki, Shiro, Nakatsuji, Kan, Hirayama, Hiroyuki

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Modification of Electrical Properties of Graphene by Substrate-Induced Nanomodulation von Lee, Jong-Kwon, Yamazaki, Shiro, Yun, Hoyeol, Park, Jinwoo, Kennedy, Gary P, Kim, Gyu-Tae, Pietzsch, Oswald, Wiesendanger, Roland, Lee, SangWook, Hong, Suklyun, Dettlaff-Weglikowska, Urszula, Roth, Siegmar

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Effective quantum-well width of confined electrons in ultrathin Ag(111) films on Si(111)7 ×  7 substrates von Sugawara, Kishu, Seo, Insung, Yamazaki, Shiro, Nakatsuji, Kan, Gohda, Yoshihiro, Hirayama, Hiroyuki

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Metallic transport in a monatomic layer of in on a silicon surface von Yamazaki, Shiro, Hosomura, Yoshikazu, Matsuda, Iwao, Hobara, Rei, Eguchi, Toyoaki, Hasegawa, Yukio, Hasegawa, Shuji

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X-ray structural analysis of an epitaxially grown Ag film/Si(111)$\sqrt{3} \times \sqrt{3} $-B substrate interface von Yoshiike, Yusaku, Tajiri, Hiroo, Yamazaki, Shiro, Nakatsuji, Kan, Hirayama, Hiroyuki

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Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot von Yamazaki, Shiro, Maeda, Keisuke, Sugimoto, Yoshiaki, Abe, Masayuki, Zobač, Vladimír, Pou, Pablo, Rodrigo, Lucia, Mutombo, Pingo, Pérez, Ruben, Jelínek, Pavel, Morita, Seizo

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Mechanical Properties of Various Phases on In/Si(111) Surfaces Revealed by Atomic Force Microscopy von Iwata, Kota, Yamazaki, Shiro, Tani, Yuta, Sugimoto, Yoshiaki

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Mechanical properties of In/Si(111)-(8×2) investigated by atomic force microscopy von Iwata, Kota, Yamazaki, Shiro, Shiotari, Akitoshi, Sugimoto, Yoshiaki

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Size, shape, and number density of deposits in the graphene solution liquid droplet method von Takagi, Yuka, Yamazaki, Shiro, Nakatsuji, Kan, Hirayama, Hiroyuki

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Localization and hopping conduction in glass and crystal phases of monatomic Au layers on a silicon surface von Yamazaki, Shiro, Matsuda, Iwao, Okino, Hiroyuki, Morikawa, Harumo, Hasegawa, Shuji

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Electron-phonon interaction and localization of surface-state carriers in a metallic monolayer von Matsuda, Iwao, Liu, Canhua, Hirahara, Toru, Ueno, Masashi, Tanikawa, Takehiro, Kanagawa, Taizo, Hobara, Rei, Yamazaki, Shiro, Hasegawa, Shuji, Kobayashi, Katsuyoshi

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Structural change by annealing of low temperature deposited Bi ultrathin films on Si(111)√3 × √3-B substrates von Nagase, Kentaro, Yamazaki, Shiro, Nakatsuji, Kan, Hirayama, Hiroyuki

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Crystal orientation dependence of metal–insulator transition for VO2 microwires fabricated on TiO2(110) substrates with step and terrace structures von Kim, Kyungmin, Genchi, Shingo, Yamazaki, Shiro, Tanaka, Hidekazu, Abe, Masayuki

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Crystal orientation dependence of metal–insulator transition for VO 2 microwires fabricated on TiO 2 (110) substrates with step and terrace structures von Kim, Kyungmin, Genchi, Shingo, Yamazaki, Shiro, Tanaka, Hidekazu, Abe, Masayuki

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Variation of the 4x1 to 8x2 structural transition temperature of quasi-one-dimensional indium chains upon carrier doping from Si(111) substrates von Ogino, Takahiro, Kuzumo, Valentin Motoi, Yamazaki, Shiro, Nakatsuji, Kan, Hirayama, Hiroyuki

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Characterization of Mono- and multilayer hexagonal Boron Nitride on Cu (111) substrate von Yamagami, Tsuyoshi, Yotsutani, Souichiro, Yamazaki, Shiro, Nakatsuji, Kan, Hirayama, Hiroyuki

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Effective quantum well width of Ag(111) nano-islands on Si(111) substrates von Sugawara, Kishu, Itakura, Yuta, Yamazaki, Shiro, Nakatsuji, Kan, Hirayama, Hiroyuki

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Structural change of low-temperature deposited ultra-thin bismuth films in annealing on the Si(111)√3×√3-B substrate von Nagase, Kentaro, Yamazaki, Shiro, Nakatsuji, Kan, Hirayama, Hiroyuki

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Electrical conduction of Ge nanodot arrays formed on an oxidized Si surface von Nakayama, Yasuo, Yamazaki, Shiro, Okino, Hiroyuki, Hirahara, Toru, Matsuda, Iwao, Hasegawa, Shuji, Ichikawa, Masakazu

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