Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects von Jing, Xu, Illarionov, Yury, Yalon, Eilam, Zhou, Peng, Grasser, Tibor, Shi, Yuanyuan, Lanza, Mario

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Radiofrequency Switches Based on Emerging Resistive Memory Technologies - A Survey von Wainstein, Nicolas, Adam, Gina, Yalon, Eilam, Kvatinsky, Shahar

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Compact Modeling and Electrothermal Measurements of Indirectly Heated Phase-Change RF Switches von Wainstein, Nicolas, Ankonina, Guy, Kvatinsky, Shahar, Yalon, Eilam

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Temperature-dependent thermal conductivity of Ge2Sb2Te5 polymorphs from 80 to 500 K von Li, Qinshu, Levit, Or, Yalon, Eilam, Sun, Bo

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Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2 von Cai, Lili, McClellan, Connor J, Koh, Ai Leen, Li, Hong, Yalon, Eilam, Pop, Eric, Zheng, Xiaolin

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High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors von Ber, Emanuel, Grady, Ryan W., Pop, Eric, Yalon, Eilam

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Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses von Levit, Or, Ber, Emanuel, Dahan, Mor M., Keller, Yair, Yalon, Eilam

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Understanding the switching mechanism of interfacial phase change memory von Okabe, Kye L., Sood, Aditya, Yalon, Eilam, Neumann, Christopher M., Asheghi, Mehdi, Pop, Eric, Goodson, Kenneth E., Wong, H.-S. Philip

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Temperature-dependent thermal resistance of phase change memory von Stern, Keren, Keller, Yair, Neumann, Christopher M., Pop, Eric, Yalon, Eilam

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Understanding leakage currents through Al2O3 on SrTiO3 von Miron, Dror, Krylov, Igor, Baskin, Maria, Yalon, Eilam, Kornblum, Lior

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Joule-heating induced phase transition in 1T-TaS2 near room temperature probed by thermal imaging of power dissipation von Jarach, Yaron, Rodes, Lior, Ber, Emanuel, Yalon, Eilam, Kanigel, Amit

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Energy Dissipation in Monolayer MoS2 Electronics von Yalon, Eilam, McClellan, Connor J, Smithe, Kirby K. H, Muñoz Rojo, Miguel, Xu, Runjie Lily, Suryavanshi, Saurabh V, Gabourie, Alex J, Neumann, Christopher M, Xiong, Feng, Farimani, Amir Barati, Pop, Eric

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On the diameter dependence of metal-nanowire Schottky barrier height von Calahorra, Yonatan, Yalon, Eilam, Ritter, Dan

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Crystallization dynamics probed by transient resistance in phase change memory cells von Ordan, Efrat, Nir-Harwood, Rivka-Galya, Dahan, Mor M., Keller, Yair, Yalon, Eilam

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Indirectly Heated Switch as a Platform for Nanosecond Probing of Phase Transition Properties in Chalcogenides von Wainstein, Nicolas, Ankonina, Guy, Swoboda, Timm, Rojo, Miguel Munoz, Kvatinsky, Shahar, Yalon, Eilam

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Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces von Miron, Dror, Cohen-Azarzar, Dana, Segev, Noa, Baskin, Maria, Palumbo, Felix, Yalon, Eilam, Kornblum, Lior

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Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition von Krylov, Igor, Qi, Yuanshen, Korchnoy, Valentina, Weinfeld, Kamira, Eizenberg, Moshe, Yalon, Eilam

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Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect von Krylov, Igor, Korchnoy, Valentina, Xu, Xianbin, Weinfeld, Kamira, Yalon, Eilam, Ritter, Dan, Eizenberg, Moshe

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Spatially Resolved Thermometry of Resistive Memory Devices von Yalon, Eilam, Deshmukh, Sanchit, Muñoz Rojo, Miguel, Lian, Feifei, Neumann, Christopher M., Xiong, Feng, Pop, Eric

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Temperature-Dependent Contact Resistance to Nonvolatile Memory Materials von Deshmukh, Sanchit, Yalon, Eilam, Lian, Feifei, Schauble, Kirstin E., Xiong, Feng, Karpov, Ilya V., Pop, Eric

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