Impact of the selenisation temperature on the structural and optical properties of CZTSe absorbers von Márquez-Prieto, J., Yakushev, M.V., Forbes, I., Krustok, J., Edwards, P.R., Zhivulko, V.D., Borodavchenko, O.M., Mudryi, A.V., Dimitrievska, M., Izquerdo-Roca, V., Pearsall, N.M., Martin, R.W.

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Photoreflectance study of AgGaTe2 single crystals von RAADIK, T, KRUSTOK, J, YAKUSHEV, M. V

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Arsenic-doped HgCdTe: FTIR photoluminescence and photoreflectance spectroscopy study von Ruzhevich, M.S., Mynbaev, K.D., Firsov, D.D., Chumanov, I.V., Komkov, O.S., Marin, D.V., Varavin, V.S., Yakushev, M.V.

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In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe von Shvets, V.A., Marin, D.V., Azarov, I.A., Yakushev, M.V., Rykhlitskii, S.V.

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Structural, optical and electronic properties of the wide bandgap topological insulator Bi1.1Sb0.9Te2S von Khatchenko, Yu E., Yakushev, M.V., Seibel, C., Bentmann, H., Orlita, M., Golyashov, V., Ponosov, Y.S., Stepina, N.P., Mudriy, A.V., Kokh, K.A., Tereshchenko, O.E., Reinert, F., Martin, R.W., Kuznetsova, T.V.

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Excitons in high-quality CuInS2 single crystals von Yakushev, M.V., Mudryi, A.V., Feofanov, Y., Ivaniukovich, A.V., Victorov, I.V.

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Influence of the copper content on the optical properties of CZTSe thin films von Yakushev, M.V., Sulimov, M.A., Márquez-Prieto, J., Forbes, I., Krustok, J., Edwards, P.R., Zhivulko, V.D., Borodavchenko, O.M., Mudryi, A.V., Martin, R.W.

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Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride von Marin, D.V., Shvets, V.A., Azarov, I.A., Yakushev, M.V., Rykhlitskii, S.V.

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STRUCTURAL CHARACTERISTICS AND PHOTOLUMINESCENCE OF THIN FILMS OF Cu.sub.2] SOLID SOLUTIONS von Borodavchenko, O.M, Zhivulko, V.D, Mudryi, A.V, Mogilnkov, I.A, Yakushev, M.V

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, J.

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A wide energy range ab initio modeling of the electronic structure of valence states in Cu(In,Ga)Se2: Comparison with photoelectron spectra von Radzivonchik, D.I., Lukoyanov, A.V., Grebennikov, V.I., Yakushev, M.V., Kuznetsova, T.V.

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Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates von Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Dvoretsky, S.A., Mikhailov, N.N., Sidorov, G.Yu, Yakushev, M.V.

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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air von Korotaev, A.G., Grigoryev, D.V., Voitsekhovskii, A.V., Lozovoy, K.A., Tarasenko, V.F., Ripenko, V.S., Shulepov, M.A., Erofeev, M.V., Yakushev, M.V., Dvoretskii, S.A., Mikhailov, N.N., Varavin, V.S.

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Voitsekhovskii, A.V., Izhnin, I.I., Mynbaev, K.D., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics von Yakushev, M.V., Maiello, P., Raadik, T., Shaw, M.J., Edwards, P.R., Krustok, J., Mudryi, A.V., Forbes, I., Martin, R.W.

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation von Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates von Varavin, V.S., Marin, D.V., Shefer, D.A., Yakushev, M.V.

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Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te von Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Fitsych, O.I., Swiatek, Z., Jakiela, R.

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Electrophysical properties of [Cd.sub.x][Hg.sub.1-x]Te substrates von Varavin, V.S, Marin, D.V, Yakushev, M.V

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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm von Varavin, V.S., Sabinina, I.V., Sidorov, G.Yu, Marin, D.V., Remesnik, V.G., Predein, A.V., Dvoretsky, S.A., Vasilyev, V.V., Sidorov, Yu.G., Yakushev, M.V., Latyshev, A.V.

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