InAsSb/InAsSbP current-tunable laser with narrow spectral line width von Civiš, S., Kubát, P., Zelinger, Z., Horká, V., Imenkov, A.N., Kolchanova, N.M., Yakovlev, Y.P.

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Increasing the emission power of LEDs (λ = 1.7–2.4 μm) by changing the light direction in the GaSb/GaInAsSb/GaAlAsSb heterostructure von Zolotukhin, A V, Sherstnev, V V, Savelieva, K S, Grebenshchikova, E A, Serebrennikova, O Yu, Ilinskaya, N D, Slobozhanuk, S A, Ivanov, E V, Yakovlev, Y P

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Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs von Moiseev, K D, Krier, A, Yakovlev, Y P

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Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode von Kucur, B., Ahmetoglu, M., Andreev, I.A., Kunitsyna, E.V., Mikhailova, M.P., Yakovlev, Y.P.

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Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE von Kizhayev, S.S, Zotova, N.V, Molchanov, S.S, Pushnyi, B.V, Yakovlev, Yu.P

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Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter von Kucur, B., Ahmetoglu, M., Andreev, I.A., Kunitsyna, E.V., Mikhailova, M.P., Yakovlev, Y.P.

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Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions von Mikhailova, M P, Moiseev, K D, Yakovlev, Yu P

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Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 μm von Civiš, S., Imenkov, A.N., Danilova, A.P., Kolchanova, N.M., Sherstnev, V.V., Yakovlev, Y.P., Walters, A.D.

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Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface von Bazhenov, N L, Zegrya, G G, Mikhailova, M P, Mynbaev, K D, Smirnov, V A, Yakovlev, Yu P

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The Development of Nuclear Frequency Standard with the Use of Ion Crystals Manipulation System von Troyan, V.I., Pal’chikov, V.G., Yakovlev, Y.P., Krasavin, A.V., Borisyuk, P.V., Chernyshev, D.M., Poteshin, S.S., Sysoev, Alexey A.

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Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction von Berezovets, V. A., Mikhailova, M. P., Moiseev, K. D., Parfeniev, R. V., Yakovlev, Yu. P., Nizhankovskii, V. I.

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Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3–5 μm von Moiseev, K.D, Mikhailova, M.P, Zhurtanov, B.I, Voronina, T.I, Andreychuk, O.V, Stoyanov, N.D, Yakovlev, Yu.P

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Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers von Imenkov, A. N., Sherstnev, V. V., Monakhov, A. M., Tarasov, D. S., Il’inskaya, N. D., Serebrennikova, O. Yu, Baranov, A. N., Yakovlev, Yu. P.

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Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0.89 lattice matched to InAs von Moiseev, K. D., Krier, A., Yakovlev, Y. P.

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Room-Temperature Photoluminescence of Ga^sub 0.96^In^sub 0.04^As^sub 0.11^Sb^sub 0.89^ Lattice Matched to InAs von Moiseev, K D, Krier, A, Yakovlev, Y P

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DX center in AlGaAsSb:Te and a mechanism of its ionization von Terziev, N. S., Hubík, P., Krištofik, J., Mareš, J. J., Šmíd, V., Yakovlev, Y. P.

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Room-temperature electroluminescence of AlSb∕InAsSb single quantum wells grown by metal organic vapor phase epitaxy von Moiseev, K. D., Ivanov, E. V., Zegrya, G. G., Mikhailova, M. P., Yakovlev, Yu. P., Hulicius, E., Hospodková, A., Pangrác, J., Melichar, K., Šimeček, T.

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A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy von Ivanov, S. V., Kaygorodov, V. A., Sorokin, S. V., Meltser, B. Ya, Solov’ev, V. A., Terent’ev, Ya. V., Lyublinskaya, O. G., Moiseev, K. D., Grebenshchikova, E. A., Mikhailova, M. P., Toropov, A. A., Yakovlev, Yu. P., Kop’ev, P. S., Alferov, Zh. I.

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Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4 μm Mid-Infrared Spectral Range von Danilova, T. N.

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Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface von Oswald, J., Pangrác, J., Hulicius, E., Šimeček, T., Moiseev, K. D., Mikhailova, M. P., Yakovlev, Yu. P.

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