What is the real value of diffusion length in GaN? von Yakimov, E.B.

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Cathodoluminescence and EBIC investigations of stacking fault expansion in 4H-SiC due to e-beam irradiation at fixed points von Yakimov, E E, Yakimov, E B

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Thermoresistive Semiconductor SiC/Si Composite Material von Brantov, S. K., Yakimov, E. B.

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Effect of Compressive and Stretching Strains on the Dislocation Luminescence Spectrum in Silicon von Sobolev, N. A., Kalyadin, A. E., Feklisova, O. V., Yakimov, E. B.

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Study of Wide-Gap Semiconductors Using Electron-Beam Induced Current Method von Yakimov, E. B.

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Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon von Orlov, V. I., Yarykin, N. A., Yakimov, E. B.

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors von Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Kochkova, A.I., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Xian, Minghan, Ren, F., Pearton, S.J.

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Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures von Shmidt, N.M., Vergeles, P.S., Yakimov, E.E., Yakimov, E.B.

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Radiation-enhanced dislocation glide in 4H-SiC at low temperatures von Yakimov, E.E., Yakimov, E.B.

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EBIC investigations of dislocations in ELOG GaN von Yakimov, E. B., Polyakov, A. Y.

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Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Yang, Jiancheng, Ren, F., Yang, Gwangseok, Kim, Jihyun, Kuramata, A., Pearton, S. J.

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Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching von Polyakov, A. Y., Jeon, Dae-Woo, Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Yakimov, E. B., Lee, In-Hwan

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Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers von Yakimov, E B, Polyakov, A Y, Smirnov, N B, Shchemerov, I V, Vergeles, P S, Yakimov, E E, Chernykh, A V, Xian, Minghan, Ren, F, Pearton, S J

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Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth von Polyakov, A. Y., Jeon, Dae-Woo, Lee, In-Hwan, Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Yakimov, E. B.

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Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell von Svintsov, A. A., Yakimov, E. B., Dorokhin, M. V., Demina, P. B., Kuznetsov, Yu. M.

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Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carrier trapping with deep centers von Polyakov, A Y, Yakimov, E B, Shchemerov, I V, Vasilev, A A, Kochkova, A I, Nikolaev, V I, Pearton, S J

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Electron beam induced excess carrier concentration von Yakimov, E. B.

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Crystal structure, vibrational spectroscopy and optical properties of a one‐dimensional organic–inorganic hybrid perovskite of [NH3CH2CH(NH3)CH2]BiCl5 von Abdel-Aal, Seham K., Abdel-Rahman, Ahmed S., Gamal, Wafia M., Abdel-Kader, Mohamed, Ayoub, Hany S., El-Sherif, Ashraf F., Kandeel, M. F., Bozhko, S., Yakimov, E. E., Yakimov, E. B.

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Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation von Yakimov, E. B., Polyakov, A. Y., Shchemerov, I. V., Smirnov, N. B., Vasilev, A. A., Vergeles, P. S., Yakimov, E. E., Chernykh, A. V., Shikoh, A. S., Ren, F., Pearton, S. J.

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Electron-beam-induced-current study of defects in GaN; experiments and simulation von Yakimov, E B

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