Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects von Hoo Teo, Koon, Zhang, Yuhao, Chowdhury, Nadim, Rakheja, Shaloo, Ma, Rui, Xie, Qingyun, Yagyu, Eiji, Yamanaka, Koji, Li, Kexin, Palacios, Tomás

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Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications von Takahashi, Hidemasa, Ando, Yuji, Tsuchiya, Yoichi, Wakejima, Akio, Hayashi, Hiroaki, Yagyu, Eiji, Kikkawa, Koichi, Sakai, Naoki, Itoh, Kenji, Suda, Jun

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Mode-evolution-based polarization rotator-splitter design via simple fabrication process von Yuan, Wangqing, Kojima, Keisuke, Wang, Bingnan, Koike-Akino, Toshiaki, Parsons, Kieran, Nishikawa, Satoshi, Yagyu, Eiji

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Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors von Nanjo, Takuma, Imai, Akifumi, Kurahashi, Kenichiro, Matsuda, Takashi, Suita, Muneyoshi, Yagyu, Eiji

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Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique von Yamanaka, Ryota, Kanazawa, Toru, Yagyu, Eiji, Miyamoto, Yasuyuki

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Analysis of Single-Photon-Detection Characteristics of GaInAs/InP Avalanche Photodiodes von Sugihara, Kohei, Yagyu, Eiji, Nishioka, Tsuyoshi, Kurata, Tetsuyuki, Matsui, Mitsuru, Tokuda, Yasunori, Itoh, Kazuyoshi

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Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes von Yagyu, E., Ishimura, E., Nakaji, M., Ihara, S., Mikami, Y., Itamoto, H., Aoyagi, T., Yoshiara, K., Tokuda, Y.

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Degradation Mode Analysis on Highly Reliable Guardring-Free Planar InAlAs Avalanche Photodiodes von Ishimura, E., Yagyu, E., Nakaji, M., Ihara, S., Yoshiara, K., Aoyagi, T., Tokuda, Y., Ishikawa, T.

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AlGaN Channel HEMT With Extremely High Breakdown Voltage von Nanjo, T., Imai, A., Suzuki, Y., Abe, Y., Oishi, T., Suita, M., Yagyu, E., Tokuda, Y.

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AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity von Azad, Md. Tasnim, Hossain, Toiyob, Sikder, Bejoy, Xie, Qingyun, Yuan, Mengyang, Yagyu, Eiji, Teo, Koon Hoo, Palacios, Tomas, Chowdhury, Nadim

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AI‐assisted Field Plate Design of GaN HEMT Device von Xiang, Xiaofeng, Palash, Rafid Hassan, Yagyu, Eiji, Dunham, Scott T., Teo, Koon Hoo, Chowdhury, Nadim

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Look out III–V von Tokuda, Yasunori, Yagyu, Eiji

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Silicon photonics Look out III-V von Tokuda, Yasunori, Yagyu, Eiji

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System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity von Hossain, Toiyob, Hossain, Tanvir, Alam, A. K. M. Anindya, Sikder, Bejoy, Xie, Qingyun, Yuan, Mengyang, Yagyu, Eiji, Teo, Koon Hoo, Palacios, Tomás, Chowdhury, Nadim

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An MMI-based wavelength combiner employing non-uniform refractive index distribution von Singh, Siddharth, Kojima, Keisuke, Koike-Akino, Toshiaki, Wang, Bingnan, Parsons, Kieran, Nishikawa, Satoshi, Yagyu, Eiji

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An MMI-based polarization splitter using patterned metal and tilted joint von Kojima, Keisuke, Yuan, Wangqing, Wang, Bingnan, Koike-Akino, Toshiaki, Parsons, Kieran, Nishikawa, Satoshi, Yagyu, Eiji

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Application of numerical optimization to the design of InP-based wavelength combiners von Özbayat, Selman, Kojima, Keisuke, Koike-Akino, Toshiaki, Wang, Bingnan, Parsons, Kieran, Singh, Siddharth, Nishikawa, Satoshi, Yagyu, Eiji

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Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications von Yagyu, Eiji, Sugihara, Kohei, Nishioka, Tsuyoshi, Matsui, Mitsuru, Yoshiara, Kiichi, Tokuda, Yasunori

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Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts von Nanjo, Takuma, Motoya, Tsukasa, Imai, Akihumi, Suzuki, Yosuke, Shiozawa, Katsuomi, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori

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METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT von YAGYU, Eiji, FUJIKAWA, Masahiro

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