A high-temperature radiation-resistant rectifier based on [p.sup.+]-n junctions in 4H-SiC ion-implanted with aluminum von Kalinina, E.V, Kossov, V.G, Yafaev, R.R, Strel'chuk, A.M, Violina, G.N

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Determination of nitrogen in silicon carbide by secondary ion mass spectrometry von Ya Ber, B, Kazantsev, D.Yu, Kovarsky, A.P, Yafaev, R.R

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Photoelectric properties of p +-n junctions based on 4H-SiC ion-implanted with aluminum von Violina, G. N., Kalinina, E. V., Kholujanov, G. F., Onushkin, G. A., Kossov, V. G., Yafaev, R. R., Hallén, A., Konstantinov, A. O.

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