Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers von Tuna, Ö., Linhart, W.M., Lutsenko, E.V., Rzheutski, M.V., Yablonskii, G.P., Veal, T.D., McConville, C.F., Giesen, C., Kalisch, H., Vescan, A., Heuken, M.

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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates von MAUDER, C, REUTERS, B, HEUKEN, M, KALISCH, H, JANSEN, R. H, WANG, K. R, FAHLE, D, TRAMPERT, A, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J. F, CHOU, M. M. C

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Photoluminescence of Ca0.5Ba0.5Ga2S4:Сe3+, Sm3+ solid solutions over a wide range of temperatures and excitation levels von Asadov, E.G., Tagiev, O.B., Gadzhieva, G.S., Asadova, A.H., Urmanov, B.D., Leonenya, M.S., Yablonskii, G.P.

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RANDOM LASERS BASED ON MIXTURES OF MICROPOWDERS OF ZnCdSSe SOLID SOLUTIONS AND PHOSPHORS [Ca.sub.4][Ga.sub.2][S.sub.7]:[Eu.sup.2+] AND Ca[.sub.2][S.sub.4]:[Eu.sup.2+] von Urmanov, B.D, Leanenia, M.S, Yablonskii, G.P, Tagiev, O.B, Asadov, E.G

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PHOTOLUMINESCENCE OF Ca[Al.sub.2][O.sub.4]:[Eu.sup.3+] NANOLUMINOPHORES OVER WIDE INTERVALS OF TEMPERATURE AND LASER EXCITATION LEVEL von Tagiev, O.B, Urmanov, B.D, Leonenia, M.S, Yablonskii, G.P, Ibrahimov, H.J

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Photoluminescence of CaGa2S4: Nd, Yb compound at room temperature von Pershukevich, P.P., Tagiev, O.B., Ibragimova, T. Sh, Kazimova, F.A., Belkov, M.V., Tabolich, A.A., Lutsenko, E.V., Pavlovskii, V.N., Yablonskii, G.P.

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Structural and luminescence properties of CaxBa1−xGa2S4:Eu2+ chalcogenide semiconductor solid solutions von Tagiyev, B.G., Tagiyev, O.B., Mammadov, A.I., Quang, Vu Xuan, Naghiyev, T.G., Jabarov, S.H., Leonenya, M.S., Yablonskii, G.P., Dang, N.T.

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TEMPERATURE DEPENDENCE OF THE BAND-GAP WIDTH OF [Mn.sub.1.5]Ag[In.sub.8.0][S.sub.14] SINGLE CRYSTALS von Bodnar, I.V, Than, Ch.B, Pavlovskii, V.N, Svitsiankou, I.E, Yablonskii, G.P

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High photoluminescence stability of CaGa4O7:Eu3+ red phosphor in wide excitation intensity interval von Leanenia, M.S., Lutsenko, E.V., Rzheutski, M.V., Yablonskii, G.P., Naghiyev, T.G., Ganbarova, H.B., Tagiev, O.B.

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Photoluminescence of CaxBa1−xGa2S4:Eu2+ solid solutions in wide excitation intensity and temperature intervals von Leanenia, M.S., Lutsenko, E.V., Rzheutski, M.V., Pavlovskii, V.N., Yablonskii, G.P., Naghiyev, T.G., Tagiev, B.G., Abushev, S.A., Tagiev, O.B.

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Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride von Chubenko, E. B., Baglov, A. V., Leonenya, M. S., Yablonskii, G. P., Borisenko, V. E.

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Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates von Yablonskii, G.P., Gurskii, A.L., Pavlovskii, V.N., Lutsenko, E.V., Zubialevich, V.Z., Shulga, T.S., Stognij, A.I., Kalisch, H., Szymakowski, A., Jansen, R.H., Alam, A., Schineller, B., Heuken, M.

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High photoluminescence stability of CaGa 4 O 7 :Eu 3+ red phosphor in wide excitation intensity interval von Leanenia, M.S., Lutsenko, E.V., Rzheutski, M.V., Yablonskii, G.P., Naghiyev, T.G., Ganbarova, H.B., Tagiev, O.B.

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Stable random lasing in CdSSe micropowders von Leanenia, M.S., Nagorny, A.V., Urmanov, B.D., Shulenkova, V.A., Yablonskii, G.P.

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Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults von Lutsenko, E.V., Rzheutski, M.V., Pavlovskii, V.N., Yablonskii, G.P., Alanzi, M., Hamidalddin, A., Alyamani, A., Mauder, C., Kalisch, H., Reuters, B., Heuken, M., Vescan, A., Naresh-Kumar, G., Trager-Cowan, C.

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Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy von Lutsenko, E.V., Rzheutski, M.V., Vainilovich, A.G., Svitsiankou, I.E., Nagorny, A.V., Shulenkova, V.A., Yablonskii, G.P., Alekseev, A.N., Petrov, S.I., Solov'ev, Ya.A., Pyatlitski, A.N., Zhigulin, D.V., Solodukha, V.A.

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STIMULATED EMISSION AND OPTICAL PROPERTIES OF SOLID SOLUTIONS OF Cu[Se.sub.2] DIRECT BAND GAP SEMICONDUCTORS von Svitsiankou, I.E, Pavlovskii, V.N, Lutsenko, E.V, Yablonskii, G.P, Mudryi, A.V, Borodavchenko, O.M, Zhivulko, V.D, Yakushev, M.V, Martin, R

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MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers von Tuna, Ö., Hahn, H., Kalisch, H., Giesen, C., Vescan, A., Rzheutski, M.V., Pavlovskii, V.N., Lutsenko, E.V., Yablonskii, G.P., Heuken, M.

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Luminescence and Lasing in ZnSe Micropowders at High Optical Excitation Levels von Leanenya, M. S., Lutsenko, E. V., Pavlovskii, V. N., Yablonskii, G. P., Nagiev, T. G., Tagiev, B. G., Tagiev, O. B., Abushev, S. A.

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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique von Jmerik, V.N., Shubina, T.V., Mizerov, A.M., Belyaev, K.G., Sakharov, A.V., Zamoryanskaya, M.V., Sitnikova, A.A., Davydov, V.Yu, Kop’ev, P.S., Lutsenko, E.V., Rzheutskii, N.V., Danilchik, A.V., Yablonskii, G.P., Ivanov, S.V.

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