Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range von Solov’ev, V. A., Chernov, M. Yu, Mel’tser, B. Ya, Semenov, A. N., Terent’ev, Ya. V., Firsov, D. D., Komkov, O. S., Ivanov, S. V.

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Electrical and optical properties of convex-type metamorphic In0.75Ga0.25As/In0.7Al0.3As quantum well structures grown by MBE on GaAs von Komissarova, T A, Chernov, M Yu, Solov'ev, V A, Meltser, B Ya, Brunkov, P N, Sitnikova, A A, Kop'ev, P S, Ivanov, S V

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In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix von Semenov, A. N., Lyublinskaya, O. G., Solov’ev, V. A., Mel’tser, B. Ya, Ivanov, S. V.

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Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons von Vasil’ev, Yu. B., Suchalkin, S. D., Ivanov, S. V., Mel’tser, B. Ya, Kop’ev, P. S.

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Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary von Semenov, A.N., Solov’ev, V.A., Meltser, B.Ya, Terent’ev, Ya.V., Prokopova, L.G., Ivanov, S.V.

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Radiative recombination in type-II GaSb/GaAs quantum dots von Hatami, F., Ledentsov, N. N., Grundmann, M., Böhrer, J., Heinrichsdorff, F., Beer, M., Bimberg, D., Ruvimov, S. S., Werner, P., Gösele, U., Heydenreich, J., Richter, U., Ivanov, S. V., Meltser, B. Ya, Kop’ev, P. S., Alferov, Zh. I.

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Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers von Ivanov, S.V., Semenov, A.N., Solov’ev, V.A., Lyublinskaya, O.G., Terent’ev, Ya.V., Meltser, B.Ya, Prokopova, L.G., Sitnikova, A.A., Usikova, A.A., Toropov, A.A., Kop’ev, P.S.

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Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures von Semenov, A. N., Meltser, B. Ya, Solov’ev, V. A., Komissarova, T. A., Sitnikova, A. A., Kirylenko, D. A., Nadtochyi, A. M., Popova, T. V., Kop’ev, P. S., Ivanov, S. V.

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On the nature of defect states at interfaces of InAs/AlSb quantum wells von Vasilyev, Yu. B., Meltser, B. Ya, Ivanov, S.V., Kop’ev, P.S.

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InSb/InAs/InGa(Al)As/GaAs(001) metamorphic nanoheterostructures grown by MBE and emitting beyond 3μm von Chernov, M.Yu, Komkov, O.S., Firsov, D.D., Meltser, B.Ya, Semenov, A.N., Terent’ev, Ya.V., Brunkov, P.N., Sitnikova, A.A., Kop’ev, P.S., Ivanov, S.V., Solov’ev, V.A.

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On the nature of the oscillations of cyclotron absorption in InAs/GaSb quantum wells von Suchalkin, S. D., Vasil’ev, Yu. B., von Klitzing, K., Golovach, V. N., Zegrya, G. G., Ivanov, S. V., Kop’ev, P. S., Mel’tser, B. Ya

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InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications von Toropov, A. A., Terent'ev, Ya. V., Shubina, T. V., Sorokin, S. V., Sedova, I. V., Kaygorodov, V. A., Solov'ev, V. A., Mel'tser, B. Ya, Ivanov, S. V., Kop'ev, P. S., Buyanova, I.A., Chen, W. M.

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In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix von Semenov, A. N., Lyublinskaya, O. G., Solov'ev, V. A., Mel'tser, B. Ya, Ivanov, S. V.

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Molecular beam epitaxy, photoluminescence and lasing of GaAs/GaSbAs QD nanostructures von Meltser, B.Ya, Solov’ev, V.A., Lyublinskaya, O.G., Toropov, A.A., Terent’ev, Ya.V., Semenov, A.N., Sitnikova, A.A., Ivanov, S.V.

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Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) von Solov’ev, V. A., Chernov, M. Yu, Sitnikova, A. A., Brunkov, P. N., Meltser, B. Ya, Ivanov, S. V.

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Special features of Sb2 and Sb4 incorporation in MBE-grown AlGaAsSb alloys von Semenov, A. N., Sorokin, V. S., Solov’ev, V. A., Mel’tser, B. Ya, Ivanov, S. V.

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Optimization of the Structural Properties and Surface Morphology of a Convex-Graded In x Al1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) von Solov’ev, V. A., Chernov, M. Yu, Sitnikova, A. A., Brunkov, P. N., Meltser, B. Ya, Ivanov, S. V.

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Optimization of the Structural Properties and Surface Morphology of a Convex-Graded In x Al1–x As (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) von V. A. Solov’ev, M. Yu. Chernov, Sitnikova, A A, Brunkov, P N, B. Ya. Meltser, Ivanov, S V

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Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates von Ivanov, S V, Altukhov, P D, Argunova, T S, Bakun, A A, Budza, A A, Chaldyshev, V V, Kovalenko, Yu A, Kop'ev, P S, Kutt, R N, Meltser, B Ya, Ruvimov, S S, Shaposhnikov, S V, Sorokin, L M, Ustinov, V M

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Photoluminescence studies of Zeeman effect in type-II InSb/InAs nanostructures von Terent'ev, Ya. V., Mukhin, M. S., Toropov, A. A., Nestoklon, M. O., Meltser, B. Ya, Semenov, A. N., Solov'ev, V. A., Ivanov, S. V.

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