Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy von Jackrel, David B., Bank, Seth R., Yuen, Homan B., Wistey, Mark A., Harris, James S., Ptak, Aaron J., Johnston, Steven W., Friedman, Daniel J., Kurtz, Sarah R.

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Recent progress on 1.55-μm dilute-nitride lasers von BANK, Seth R, BAE, Hopil, GODDARD, Lynford L, YUEN, Homan B, WISTEY, Mark A, KUDRAWIEC, Robert, HARRIS, James S

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Low-threshold continuous-wave 1.5-μm GaInNAsSb lasers grown on GaAs von BANK, Seth R, WISTEY, Mark A, GODDARD, Lynford L, YUEN, Homan B, LORDI, Vincenzo, HARRIS, James S

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Nitrogen plasma optimization for high-quality dilute nitrides von Wistey, Mark A., Bank, Seth R., Yuen, Homan B., Bae, Hopil, Harris, James S.

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Effects of different plasma species (atomic N, metastable N2, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy von Oye, Michael M., Mattord, Terry J., Hallock, Gary A., Bank, Seth R., Wistey, Mark A., Reifsnider, Jason M., Ptak, Aaron J., Yuen, Homan B., Harris, James S., Holmes, Archie L.

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Temperature dependencies of annealing behaviors of GaInNAsSb∕GaNAs quantum wells for long wavelength dilute-nitride lasers von Bae, Hopil P., Bank, Seth R., Yuen, Homan B., Sarmiento, Tomas, Pickett, Evan R., Wistey, Mark A., Harris, James S.

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Improved optical quality of GaNAsSb in the dilute Sb limit von Yuen, Homan B., Bank, Seth R., Wistey, Mark A., Harris, James S., Seong, Maeng-Je, Yoon, Seokhyun, Kudrawiec, Robert, Misiewicz, Jan

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Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300–1600nm von Lordi, Vincenzo, Yuen, Homan B., Bank, Seth R., Harris, James S.

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InSb and InSb:N multiple quantum dots von Hatami, Fariba, Kim, Seongsin M., Yuen, Homan B., Harris, James S.

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The role of antimony on properties of widely varying GaInNAsSb compositions von Yuen, Homan B., Bank, Seth R., Bae, Hopil, Wistey, Mark A., Harris, James S.

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Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers von Goddard, Lynford L., Bank, Seth R., Wistey, Mark A., Yuen, Homan B., Rao, Zhilong, Harris, James S.

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Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm von Yuen, Homan B., Bank, Seth R., Wistey, Mark A., Harris, James S., Moto, Akihiro

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Effects of growth temperature on the structural and optical properties of 1.55μm GaInNAsSb quantum wells grown on GaAs von Bank, Seth R., Yuen, Homan B., Wistey, Mark A., Lordi, Vincenzo, Bae, Hopil P., Harris, James S.

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Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications von Bank, Seth R., Yuen, Homan B., Bae, Hopil, Wistey, Mark A., Harris, James S.

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Mid-infrared luminescence of an In N As Sb ∕ In As single quantum well grown by molecular beam epitaxy von Yuen, Homan B., Kim, Seongsin M., Hatami, Fariba, Harris, James S., Chin, Alan H.

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Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells von Yuen, Homan B., Bank, Seth R., Bae, Hopil, Wistey, Mark A., Harris, James S.

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Mid-infrared luminescence of an InNAsSb∕InAs single quantum well grown by molecular beam epitaxy von Yuen, Homan B., Kim, Seongsin M., Hatami, Fariba, Harris, James S., Chin, Alan H.

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Temperature dependencies of annealing behaviors of Ga In N As Sb ∕ Ga N As quantum wells for long wavelength dilute-nitride lasers von Bae, Hopil P., Bank, Seth R., Yuen, Homan B., Sarmiento, Tomas, Pickett, Evan R., Wistey, Mark A., Harris, James S.

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Enhanced luminescence in GaInNAsSb quantum wells through variationof the arsenic and antimony fluxes von Bank, Seth R., Yuen, Homan B., Bae, Hopil, Wistey, Mark A., Moto, Akihiro, Harris, James S.

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Overannealing effects in GaInNAs(Sb) alloys and their importanceto laser applications von Bank, Seth R., Yuen, Homan B., Bae, Hopil, Wistey, Mark A., Harris, James S.

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