Experimental investigation on the single event gate rupture and hardening of the 600 V trench IGBT von Wei, Zhichao, Zhang, Hongwei, Sun, Yi, Wu, Wangran, Luo, Lei, Yu, Qingkui, Tang, Min

Volltext

An Optimal Design Method for Lightweight Heating Film of Anisotropic Heat Conduction Substrate Based on Surrogate Model von Deng, Zheng, Yu, Qingkui, Liu, Jingyu, Wang, Yanan, Yan, Shoubing, Huai, Nana, Zhang, Jingze, Gao, Huaxing

Volltext

A Quantitative Analysis of DICE SRAM SEU Caused by Heavy Ion Elastic Scattering von Zhu, Ming, Zhu, Hengjing, Zhang, Wei, Yu, Qingkui, Tang, Min

Volltext

Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs von He, Mu, Dong, Peng, Ma, Yao, Yu, Qingkui, Cao, Shuang, Huang, Wende, Xu, Qian, Zhang, Sijie, Huang, Mingmin, Li, Yun, Yang, Zhimei, Gong, Min

Volltext

The Investigation on Single Event Function Failure for DC/DC Converters with Three Single Terminal Topological Structures von Li, Pengwei, Wang, Wenyan, Luo, Lei, Yu, Qingkui, Tang, Min, Du, Feipeng, Liu, Jie

Volltext

Analyzing the impact of soft errors in VGG networks implemented on GPUs von Wei, Jinghe, Ibrahim, Younis, Qian, Siyu, Wang, Haibin, Liu, Guozhu, Yu, Qingkui, Qian, Rong, Shi, Junwei

Volltext

Displacement damage equivalence of neutron and proton radiations in triple-junction GaInP/GaAs/Ge solar cells von Liu, Lina, Mei, Bo, Zheng, Zhongshan, Wang, Lei, Bai, Yurong, Yu, Qingkui, Li, Pei, Zhao, Hongda, Sun, Yichao, Li, Bo

Volltext

Failure analysis of heavy ion-irradiated silicon carbide junction barrier Schottky diodes von Cao, Shuang, Yu, Qingkui, Wang, Qianyuan, Wang, He, Sun, Yi, Lv, He, Mei, Bo, Mo, Rigen, Li, Pengwei, Zhang, Hongwei

Volltext

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation von He, Mu, Dong, Xiaoping, Xiang, Meiju, Ma, Yao, Huang, Mingmin, Zhang, Sijie, Yu, Qingkui, Cao, Shuang, Lu, Zhongyu, Li, Yun, Yang, Zhimei, Gong, Min

Volltext

Research on single event effect test of a RRAM memory and space flight demonstration von Lyu, He, Zhang, Hongwei, Mei, Bo, Yu, Qingkui, Mo, Rigen, Sun, Yi, Gao, Wu

Volltext

Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C von Yu, Qingkui, Cao, Shuang, Lv, He, Sun, Yi, Mo, Rigen, Wang, Qianyuan, Mei, Bo, Zhang, Hongwei, Liu, Chaoming, Yu, Xuefeng

Volltext

Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation von Mo, Rigen, Li, Pengwei, Lyu, He, Mei, Bo, Sun, Yi, Yu, Qingkui, Cao, Shuang, Wang, Qianyuan, Zhang, Hongwei

Volltext

Special Degradation Effects of 60 Co γ -Rays Irradiation on Electrical Parameters of SiC MOSFETs von Feng, Haonan, Liang, Xiaowen, Pu, Xiaojuan, Yang, Sheng, Feng, Jie, Wei, Ying, Xiang, Yutang, Sun, Jing, Zhang, Dan, Li, Yudong, Yu, Qingkui, Yu, Xuefeng, Guo, Qi

Volltext

Special Degradation Effects of 60Co γ-rays Irradiation on Electrical Parameters of SiC MOSFETs von Feng, Haonan, Liang, Xiaowen, Pu, Xiaojuan, Yang, Sheng, Feng, Jie, Wei, Ying, Xiang, Yutang, Sun, Jing, Zhang, Dan, Li, Yudong, Yu, Qingkui, Yu, Xuefeng, Guo, Qi

Volltext

Application of Total Ionizing Dose Radiation Test Standards to SiC MOSFETs von Yu, Qingkui, Ali, Waqas, Cao, Shuang, Wang, He, Lv, He, Sun, Yi, Mo, Rigen, Wang, Qianyuan, Mei, Bo, Sun, Jiajia, Zhang, Hongwei, Tang, Min, Bai, Song, Zhang, Teng, Bai, Yun, Zhang, Chenrui

Volltext

Effect of gamma irradiation on GaN lateral Schottky barrier diodes von Duan, Chao, Wu, Zhaoxi, Meng, Meng, Zhao, Shenglei, Wang, Xu, Yu, Qingkui

Volltext

Heavy ion radiation and temperature effects on SiC schottky barrier diode von Wang, Duowei, Hu, Rongbin, Chen, Gang, Tang, Changqin, Ma, Yao, Gong, Min, Yu, Qingkui, Cao, Shuang, Li, Yun, Huang, Mingmin, Yang, Zhimei

Volltext

Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices von Yu, Qingkui, Sun, Yi, Li, Zheng, Mei, Bo, Li, Xiaoliang, Lv, He, Li, Pengwei, Tang, Min

Volltext

重离子引起SiC MOSFET栅氧化物潜在损伤研究 von 于庆奎, 曹爽, 张琛睿, 孙毅, 梅博, 王乾元, 王贺, 魏志超, 张洪伟, 张腾, 柏松

Volltext

A New Analyzing Method of Single Event Latch-Up Protection Circuit Based on Current Comparing and Its Performance Verification von Li, Pengwei, Fu, Xiaoyun, Luo, Lei, Yu, Qingkui

Volltext