Modeling and Optimal Device Design for 4H-SiC Super-Junction Devices von Yu, Liangchun, Sheng, Kuang

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Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range von Ghandi, Reza, Cheng-Po Chen, Liang Yin, Xingguang Zhu, Liangchun Yu, Arthur, Stephen, Ahmad, Faisal, Sandvik, Peter

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High-Frequency Switching of SiC High-Voltage LJFET von Kuang Sheng, Yongxi Zhang, Liangchun Yu, Ming Su, Zhao, J.H.

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Oxide Reliability of SiC MOS Devices von Liangchun Yu, Cheung, K.P., Campbell, J., Suehle, J.S., Kuang Sheng

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High Frequency Switching of SiC High Voltage LJFET von Kuang Sheng, Yongxi Zhang, Ming Su, Liangchun Yu, Zhao, J.H.

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Optimization of Holding Current in 4H-SiC Thyristors von Arthur, Steve, Katz, Sarah, Stum, Zach, Elasser, Ahmed, Soloviev, Stanislav, Yu, Liang Chun

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Modeling and Optimal Device Design for 4H-SiC Super-Junction Devices : Silicon carbide devices and technology von LIANGCHUN YU, KUANG SHENG

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Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs von Fronheiser, Jody, Yu, Liang Chun, Cheung, Kin P., Tilak, Vinayak

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Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters von McMahon, J. Jay, Tilak, Vinayak, Kretchmer, Jim, Fronheiser, Jody, Yu, Liang Chun, Elson, J.T., Kovalec, Roger

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Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability von Matocha, Kevin, Fronheiser, Jody, Yu, Liang Chun, Chatterjee, Aveek, Grossner, Ulrike, Tilak, Vinayak

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Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices von Yu, Liang Chun, Matocha, Kevin, Cheung, Kin P., Sheng, Kuang, Suehle, John S., Dunne, Greg

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Market performance of Chinese telecommunications: new regulatory policies von Yu, Liangchun, Berg, Sanford, Guo, Qing

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Channel Hot-Carrier Effect of 4H-SiC MOSFET von Yu, Liang Chun, Lelis, Aivars J., Suehle, John S., Ryu, Sei Hyung, Cheung, Kin P., Sheng, Kuang, Campbell, Jason P.

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Wafer-Level Hall Measurement on SiC MOSFET von Yu, Liang Chun, Suehle, John S., Tilak, Vinayak, Matocha, Kevin, Cheung, Kin P., Sheng, Kuang, Campbell, Jason P., Dunne, Greg

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High voltage semiconductor devices having improved electric field suppression von Yu, Liangchun, Stoffel, Nancy Cecelia, Kapusta, Christopher James, Arthur, Stephen Daley, Esler, David Richard

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Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments von Yu, Liangchun C, Dunne, G T, Matocha, K S, Cheung, Kin P, Suehle, John S, Kuang Sheng

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Methods of fabricating high voltage semiconductor devices having improved electric field suppression von Yu, Liangchun, Stoffel, Nancy Cecelia, Kapusta, Christopher James, Arthur, Stephen Daley, Esler, David Richard

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An analysis of the characteristics of Chinese listed companies’ independent director system von Jinsong, TAN, Minyi, LI, Wenjing, LI, Heng, ZHENG, Jianlin, WU, Yu, LIANG

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HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRIC FIELD UPPRESSION von Yu, Liangchun, Stoffel, Nancy Cecelia, Kapusta, Christopher James, Arthur, Stephen Daley, Esler, David Richard

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METHODS OF FABRICATING HIGH VOLTAGE SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRIC FIELD SUPPRESSION von Yu, Liangchun, Stoffel, Nancy Cecelia, Kapusta, Christopher James, Arthur, Stephen Daley, Esler, David Richard

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