Perspective: A review on memristive hardware for neuromorphic computation von Sung, Changhyuck, Hwang, Hyunsang, Yoo, In Kyeong

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Physical electro-thermal model of resistive switching in bi-layered resistance-change memory von Kim, Sungho, Kim, Sae-Jin, Kim, Kyung Min, Lee, Seung Ryul, Chang, Man, Cho, Eunju, Kim, Young-Bae, Kim, Chang Jung, -In Chung, U., Yoo, In-Kyeong

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Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory von Lee, Myoung-Jae, Han, Seungwu, Jeon, Sang Ho, Park, Bae Ho, Kang, Bo Soo, Ahn, Seung-Eon, Kim, Ki Hwan, Lee, Chang Bum, Kim, Chang Jung, Yoo, In-Kyeong, Seo, David H, Li, Xiang-Shu, Park, Jong-Bong, Lee, Jung-Hyun, Park, Youngsoo

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A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory von Lee, Myoung-Jae, Lee, Dongsoo, Cho, Seong-Ho, Hur, Ji-Hyun, Lee, Sang-Moon, Seo, David H, Kim, Dong-Sik, Yang, Moon-Seung, Lee, Sunghun, Hwang, Euichul, Uddin, Mohammad Rakib, Kim, Hojung, Chung, U-In, Park, Youngsoo, Yoo, In-Kyeong

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HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications von Seungyeol Oh, Taeho Kim, Myunghoon Kwak, Jeonghwan Song, Jiyong Woo, Sanghun Jeon, In Kyeong Yoo, Hyunsang Hwang

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Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing von Oh, Seungyeol, Song, Jeonghwan, Yoo, In Kyeong, Hwang, Hyunsang

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures von Lee, Myoung-Jae, Lee, Chang Bum, Lee, Dongsoo, Lee, Seung Ryul, Chang, Man, Hur, Ji Hyun, Kim, Young-Bae, Kim, Chang-Jung, Seo, David H., Seo, Sunae, Chung, U-In, Yoo, In-Kyeong, Kim, Kinam

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Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory von Lee, M.-J., Park, Y., Suh, D.-S., Lee, E.-H., Seo, S., Kim, D.-C., Jung, R., Kang, B.-S., Ahn, S.-E., Lee, C. B., Seo, D. H., Cha, Y.-K., Yoo, I.-K., Kim, J.-S., Park, B. H.

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HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications von Oh, Seungyeol, Kim, Taeho, Kwak, Myunghoon, Song, Jeonghwan, Woo, Jiyong, Jeon, Sanghun, Yoo, In Kyeong, Hwang, Hyunsang

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A New Operating Scheme by Switching the Polarity of Program/Erase Bias for Partially Oxidized Amorphous-Si-Based Charge-Trap Memory von Sangjin Park, Young-Kwan Cha, Cha, D., Shin, S., Jae Woong Hyun, Jung Hoon Lee, Youngsoo Park, In-Kyeong Yoo, Suk-Ho Choi

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A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories von Lee, M.-J., Seo, S., Kim, D.-C., Ahn, S.-E., Seo, D. H., Yoo, I.-K., Baek, I.-G., Kim, D.-S., Byun, I.-S., Kim, S.-H., Hwang, I.-R., Kim, J.-S., Jeon, S.-H., Park, B. H.

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Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory von Ahn, S.-E., Lee, M.-J., Park, Y., Kang, B. S., Lee, C. B., Kim, K. H., Seo, S., Suh, D.-S., Kim, D.-C., Hur, J., Xianyu, W., Stefanovich, G., Yin, H., Yoo, I.-K., Lee, J.-H., Park, J.-B., Baek, I.-G., Park, B. H.

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High threshold voltage p-GaN gate power devices on 200 mm Si von Jongseob Kim, Sun-Kyu Hwang, Injun Hwang, Hyoji Choi, Soogine Chong, Hyun-Sik Choi, Woochul Jeon, Hyuk Soon Choi, Jun Yong Kim, Young Hwan Park, Kyung Yeon Kim, Jong-Bong Park, Jong-Bong Ha, Ki Yeol Park, Jaejoon Oh, Jai Kwang Shin, U-In Chung, In-Kyeong Yoo, Kinam Kim

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Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory von Seung Ryul Lee, Young-Bae Kim, Man Chang, Kyung Min Kim, Chang Bum Lee, Ji Hyun Hur, Gyeong-Su Park, Dongsoo Lee, Myoung-Jae Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo, Kinam Kim

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Bi-layered RRAM with unlimited endurance and extremely uniform switching von Young-Bae Kim, Seung Ryul Lee, Dongsoo Lee, Chang Bum Lee, Man Chang, Ji Hyun Hur, Myoung-Jae Lee, Gyeong-Su Park, Chang Jung Kim, U-In Chung, In-Kyeong Yoo, Kinam Kim

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Multibit memories using a structure of SiO2/partially oxidized amorphous Si∕HfO2 von Park, Sangjin, Cha, Young-Kwan, Cha, Daigil, Park, Youngsoo, Yoo, In-Kyeong, Lee, Jung-Hyun, Seol, Kwang Soo, Choi, Suk-Ho

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Resistance-switching characteristics of polycrystalline Nb2O5 for nonvolatile memory application von SIM, Hyunjun, CHOI, Dooho, LEE, Dongsoo, SEO, Sunae, LEE, Myong-Jae, YOO, In-Kyeong, HWANG, Hyunsang

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Investigation of pyroelectric electron emission from monodomain lithium niobate single crystals von Bourim, El Mostafa, Moon, Chang-Wook, Lee, Seung-Woon, Kyeong Yoo, In

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Performance of threshold switching in chalcogenide glass for 3D stackable selector von Sungho Kim, Young-Bae Kim, Kyung Min Kim, Sae-Jin Kim, Seung Ryul Lee, Man Chang, Eunju Cho, Myoung-Jae Lee, Dongsoo Lee, Chang Jung Kim, U-In Chung, In-Kyeong Yoo

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Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control von Jung, Ranju, Lee, Myoung-Jae, Seo, Sunae, Kim, Dong Chirl, Park, Gyeong-Su, Kim, Kihong, Ahn, Seungeon, Park, Youngsoo, Yoo, In-Kyeong, Kim, Jin-Soo, Park, Bae Ho

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