Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective von Yang, Duyoung, Kim, Byungsoo, Eom, Tae Hoon, Park, Yongjo, Jang, Ho Won

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Origin of efficiency droop in GaN-based light-emitting diodes von Kim, Min-Ho, Schubert, Martin F., Dai, Qi, Kim, Jong Kyu, Schubert, E. Fred, Piprek, Joachim, Park, Yongjo

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Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates von Lee, Donghyun, Lee, Jong Won, Jang, Jeonghwan, Shin, In-Su, Jin, Lu, Park, Jun Hyuk, Kim, Jungsub, Lee, Jinsub, Noh, Hye-Seok, Kim, Yong-Il, Park, Youngsoo, Lee, Gun-Do, Park, Yongjo, Kim, Jong Kyu, Yoon, Euijoon

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Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes von Dai, Qi, Shan, Qifeng, Wang, Jing, Chhajed, Sameer, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D., Kim, Min-Ho, Park, Yongjo

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Investigation of leakage current paths in n-GaN by conductive atomic force microscopy von Kim, Bumho, Moon, Daeyoung, Joo, Kisu, Oh, Sewoung, Lee, Young Kuk, Park, Yongjo, Nanishi, Yasushi, Yoon, Euijoon

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A discrete core-shell-like micro-light-emitting diode array grown on sapphire nano-membranes von Lee, Seungmin, Kim, Jongmyeong, Oh, Jehong, Ryu, Jungel, Hwang, Kyungwook, Hwang, Junsik, Kang, Sungjin, Choi, Jun Hee, Sim, Young Chul, Cho, Yong-Hoon, Chung, Tae Hoon, Jeong, Tak, Park, Yongjo, Yoon, Euijoon

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Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate von Kim, Jongmyeong, Lee, Seungmin, Oh, Jehong, Ryu, Jungel, Park, Yongjo, Park, Seoung-Hwan, Yoon, Euijoon

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Origin of extra diffraction spots for high crystalline alpha-Ga2O3 von Lee, Yong-Hee, Yang, Duyoung, Gil, Byeongjun, Sheen, Mi-Hyang, Yoon, Euijoon, Park, Yongjo, Jang, Ho-Won, Yoon, Sangmoon, Kim, Miyoung, Kim, Young-Woon

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Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes von Xu, Jiuru, Schubert, Martin F., Noemaun, Ahmed N., Zhu, Di, Kim, Jong Kyu, Schubert, E. Fred, Kim, Min Ho, Chung, Hun Jae, Yoon, Sukho, Sone, Cheolsoo, Park, Yongjo

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Analysis of high-power packages for phosphor-based white-light-emitting diodes von Luo, Hong, Kim, Jong Kyu, Schubert, E. Fred, Cho, Jaehee, Sone, Cheolsoo, Park, Yongjo

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On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms von Dai, Qi, Shan, Qifeng, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D., Kim, Min-Ho, Park, Yongjo

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Efficient Alternating Current Operated White Light-Emitting Diode Chip von Onushkin, G.A., Young-Jin Lee, Jung-Ja Yang, Hyung-Kun Kim, Joong-Kon Son, Gil-Han Park, YongJo Park

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Epitaxial growth of single-crystalline AlN layer on Si(111) by DC magnetron sputtering at room temperature von Shin, In-Su, Kim, Jongmyeong, Lee, Donghyun, Kim, Donghyun, Park, Yongjo, Yoon, Euijoon

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High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes von Hyunsoo Kim, Kwang Hyeon Baik, Jaehee Cho, Jeong Wook Lee, Yoon, S., Hyungkun Kim, Sung-Nam Lee, Sone, C., Yongjo Park, Tae-Yeon Seong

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Luminescence properties related anti-phase domain of alpha-Ga2O3 von Lee, Yong-Hee, Gil, Byeongjun, Yang, Duyoung, Sheen, Mi-Hyang, Yoon, Euijoon, Park, Yongjo, Jang, Ho-Won, Yoon, Sangmoon, Kim, Miyoung, Kim, Young-Woon

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Real-Time Tunable Gas Sensing Platform Based on SnO2 Nanoparticles Activated by Blue Micro-Light-Emitting Diodes von Nam, Gi Baek, Ryu, Jung-El, Eom, Tae Hoon, Kim, Seung Ju, Suh, Jun Min, Lee, Seungmin, Choi, Sungkyun, Moon, Cheon Woo, Park, Seon Ju, Lee, Soo Min, Kim, Byungsoo, Park, Sung Hyuk, Yang, Jin Wook, Min, Sangjin, Park, Sohyeon, Cho, Sung Hwan, Kim, Hyuk Jin, Jun, Sang Eon, Lee, Tae Hyung, Kim, Yeong Jae, Kim, Jae Young, Hong, Young Joon, Shim, Jong-In, Byun, Hyung-Gi, Park, Yongjo, Park, Inkyu, Ryu, Sang-Wan, Jang, Ho Won

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Ge surface-energy-driven secondary grain growth via two-step annealing von Lee, Sangsoo, Son, Yong-Hoon, Park, Yongjo, Hwang, Kihyun, Shin, Yoo Gyun, Yoon, Euijoon

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Characteristics of dotlike green satellite emission in GaInN light emitting diodes von Mao, An, Cho, Jaehee, Dai, Qi, Schubert, E. Fred, Son, Joong Kon, Park, Yongjo

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Consideration of the Actual Current-Spreading Length of GaN-Based Light-Emitting Diodes for High-Efficiency Design von KIM, Hyunsoo, CHO, Jaehee, JEONG WOOK LEE, YOON, Sukho, KIM, Hyungkun, SONE, Cheolsoo, PARK, Yongjo, SEONG, Tae-Yeon

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Metallization contacts to nonpolar a -plane n -type GaN von Kim, Hyunsoo, Lee, Sung-Nam, Park, Yongjo, Kwak, Joon Seop, Seong, Tae-Yeon

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