Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures von Yokouchi, Noriyuki, Danner, Aaron J., Choquette, Kent D.

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InAs Quantum Dot Lasers with Extremely Low Threshold Current Density (7 A/cm 2 /Layer) von Shimizu, Hitoshi, Saravanan, Shanmugam, Yoshida, Junji, Ibe, Sayoko, Yokouchi, Noriyuki

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Two-dimensional photonic crystal confined vertical-cavity surface-emitting lasers von Yokouchi, N., Danner, A.J., Choquette, K.D.

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Various low group velocity effects in photonic crystal line defect waveguides and their demonstration by laser oscillation von Kiyota, Kazuaki, Kise, Tomofumi, Yokouchi, Noriyuki, Ide, Toshihide, Baba, Toshihiko

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Transverse modes of photonic crystal vertical-cavity lasers von Danner, Aaron J., Raftery, James J., Yokouchi, Noriyuki, Choquette, Kent D.

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Vertical-cavity surface-emitting laser operating with photonic crystal seven-point defect structure von Yokouchi, Noriyuki, Danner, Aaron J., Choquette, Kent D.

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Vertical-Cavity Surface-Emitting Lasers for Optical LAN von YOKOUCHI, Noriyuki

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OPTICAL POWER TRANSMISSION DEVICE von WATANABE, Kengo, YOKOUCHI, Noriyuki

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OPTICAL POWER TRANSMISSION DEVICE von WATANABE, Kengo, YOKOUCHI, Noriyuki

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Semiconductor optical device von Yokouchi Noriyuki, Kawakita Yasumasa

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Polarization independent operation of U-turn shape semiconductor optical amplifier by using PLC-based polarization diversity circuit von Hasegawa, H., Funabashi, M., Maruyama, K., Akutsu, T., Yokouchi, N., Nara, K.

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SEMICONDUCTOR OPTICAL DEVICE von Yokouchi Noriyuki, Kawakita Yasumasa

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Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy von KURITA, Y, YOKOUCHI, N, MIYAMOTO, T, KOYAMA, F, IGA, K

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AN OPTICAL-ABSORPTION PROPERTY OF HIGHLY BERYLLIUM-DOPED GAINASP GROWN BY CHEMICAL BEAM EPITAXY von YOKOUCHI, N, UCHIDA, T, MIYAMOTO, T, INABA, Y, KOYAMA, F, IGA, K

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GaInAsP/InP multi-quantum barrier (MQB) grown by chemical beam epitaxy (CBE) von INABA, Y, UCHIDA, T, YOKOUCHI, N, MIYAMOTO, T, KOYAMA, F, IGA, K

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GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector von Yokouchi, Noriyuki, Miyamoto, Tomoyuki, Uchida, Takashi, Inaba, Yuichi, Fumio Koyama, Fumio Koyama, Kenichi Iga, Kenichi Iga

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Highly beryllium-doped GaInAs grown by chemical beam epitaxy von UCHIDA, T. K, UCHIDA, T, YOKOUCHI, N, KOYAMA, F, IGA, K

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OPTICAL POWER TRANSMISSION DEVICE von YOKOUCHI NORIYUKI, WATANABE KENGO

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Oberflächenemittierende Halbleiterlaservorrichtung von Yokouchi, Noriyuki

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Growth of Ga0.47In0.53As/InP double-heterostructure wafers by chemical beam epitaxy (CBE) von UCHIDA, T, UCHIDA, T. K, MISE, K, YOKOUCHI, N, KOYAMA, F, IGA, K

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