Two-dimensional photonic crystal confined vertical-cavity surface-emitting lasers von Yokouchi, N., Danner, A.J., Choquette, K.D.

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Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures von Yokouchi, Noriyuki, Danner, Aaron J., Choquette, Kent D.

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Various low group velocity effects in photonic crystal line defect waveguides and their demonstration by laser oscillation von Kiyota, Kazuaki, Kise, Tomofumi, Yokouchi, Noriyuki, Ide, Toshihide, Baba, Toshihiko

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OBSTACLES TO CONTINUE STAYING AT HOME IN JAPAN: VIEWPOINTS OF OLDER PERSONS, FAMILY CAREGIVERS AND CARE SPECIALISTS von Suzawa, S, Yokouchi, N, Baba, A, Yamane, K, Kim, T, Kimata, M, Sugawara, I, Murayama, H

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Transverse modes of photonic crystal vertical-cavity lasers von Danner, Aaron J., Raftery, James J., Yokouchi, Noriyuki, Choquette, Kent D.

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Vertical-cavity surface-emitting laser operating with photonic crystal seven-point defect structure von Yokouchi, Noriyuki, Danner, Aaron J., Choquette, Kent D.

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Tensile-strained GaInAsP-InP quantum-well lasers emitting at 1.3 μm von YOKOUCHI, N, YAMANAKA, N, IWAI, N, NAKAHIRA, Y, KASUKAWA, A

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Attenuator integrated waveguide photodetectors (AIPD) with variable sensitivity range of 11 dB von Yokouchi, N., Yoshida, J., Yamanaka, N., Yamaguchi, T., Nishikata, K.

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Very high characteristic temperature and constant differential quantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity... von Kasukawa, A., Iwai, N., Yamanaka, N., Yokouchi, N.

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Vertical cavity surface emitting lasers laterally confined by 2-dimensional photonic crystals von Yokouchi, N., Danner, A., Choquette, K.D.

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Polarization independent operation of U-turn shape semiconductor optical amplifier by using PLC-based polarization diversity circuit von Hasegawa, H., Funabashi, M., Maruyama, K., Akutsu, T., Yokouchi, N., Nara, K.

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1550 nm AlGaInAs/InP widely tunable BH laser based on arrayed DFB von Iwai, N., Wakaba, M., Kobayakawa, M., Kiyota, K., Kurobe, T., Kobayashi, G., Kimoto, T., Tamura, S., Mukaihara, T., Yokouchi, N., Ishii, H., Kasukawa, A.

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Composition changes in GaxIn1-xAs/InP superlattice growth by chemical beam epitaxy von YOKOUCHI, N, INABA, Y, UCHIDA, T, MIYAMOTO, T, MORI, K, KOYAMA, F, IGA, K

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Growth of GaInAs(P)/InP multi-quantum barrier by chemical beam epitaxy von Inaba, Y., Uchida, T., Yokouchi, N., Miyamoto, T., Mori, K., Koyama, F., Iga, K.

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GaInAsP/InP attenuator integrated waveguide photodetector (AIPD) based on the Franz-Keldysh effect von Yokouchi, N., Yoshida, J., Yamanaka, N., Yamaguchi, T., Nishikata, K.

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PHOTOLUMINESCENCE CHARACTERIZATION OF GAXIN1-XAS (0-LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.32) STRAINED QUANTUM-WELLS GROWN ON INP BY CHEMICAL BEAM EPITAXY von UCHIDA, T, UCHIDA, TK, YOKOUCHI, N, MIYAMOTO, T, KOYAMA, F, IGA, K

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GaInAs/InP MQW and DBR growth for surface emitting lasers by CBE von Uchida, T.K., Uchida, T., Mise, K., Yokouchi, N., Koyama, F., Iga, K.

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Coupled-defect photonic crystal vertical cavity surface emitting lasers von Danner, A J, Lee, J C, Raftery, J J, Yokouchi, N, Choquette, K D

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Continuous-wave operation up to 36 deg C of 1.3-mu m GaInAsP-InPvertical-cavity surface-emitting lasers von Uchiyama, S, Yokouchi, N, Ninomiya, T

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850nm VCSELs for 10Gb/s operation von Iwai, N., Yokouchi, N., Kasukawa, A.

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