Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy von Yodo, Tokuo, Yona, Hiroaki, Ando, Hironori, Nosei, Daiki, Harada, Yoshiyuki

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Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer von Sasaki, Atsushi, Liu, Jin, Hara, Wakana, Akiba, Shusaku, Saito, Keisuke, Yodo, Tokuo, Yoshimoto, Mamoru

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Visible emissions near 1.9–2.2 eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy von Yodo, Tokuo, Kitayama, Yasunobu, Miyaki, Kazunari, Yona, Hiroaki, Harada, Yoshiyuki, Prince, Kathryn E, Scott, K, Butcher, A

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Characterization of GaAs films grown on vicinal Si(110) substrates by molecular-beam epitaxy von YODO, T

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Initial growth of GaAs on vicinal Si(111) substrates by molecular-beam epitaxy von YODO, T

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Near infrared optical properties of InN on Si von Yoshida, Gentoku, Nakata, Hiroyasu, Yodo, Tokuo

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Functional surface on periodical nanostructure self-organized by laser scanning at speed of 300 m/min von Kaneko, Satoru, Ito, Takeshi, Kato, Chihiro, Tanaka, Satomi, Ono, Yosuke, Yodo, Tokuo, Nakata, Hiroyasu, Matsuno, Akira, Nire, Takashi, Matsuda, Akifumi, Yoshimoto, Mamoru

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Molecular beam epitaxial growth of the [formula omitted] superlattices on (100) GaAs substrates von Yano, Mitsuaki, Koike, Kazuto, Furushou, Takeshi, Yodo, Tokuo

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GROWTH OF CDS BY ATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY AT LOW-TEMPERATURE von YODO, T, TANAKA, S

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Functional surface on periodical nanostructure self-organized by laser scanning at speed of 300m/min von Kaneko, Satoru, Ito, Takeshi, Kato, Chihiro, Tanaka, Satomi, Ono, Yosuke, Yodo, Tokuo, Nakata, Hiroyasu, Matsuno, Akira, Nire, Takashi, Matsuda, Akifumi, Yoshimoto, Mamoru

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Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (1 1 1) by electron–cyclotron r... von Yodo, Tokuo, Shimada, Teruya, Tagawa, Sumito, Harada, Yoshiyuki

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Effects of high-temperature annealing on the structural and crystalline qualities of GaAs heteroepitaxial layers grown on Si substrates using two-step and direct methods by molecul... von YODO, T, TAMURA, M

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Thermal stability of ZnSe epilayer grown by MOVPE von Yodo, Tokuo, Yamashita, Ken

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In situ observations of GaAs initial growth on Si substrates studied using an ultrahigh-vacuum transmission-electron microscope/molecular-beam epitaxy system von YODO, T, TAMURA, M, TOMITA, M, WAZAWA, M

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Si基板上InNの近赤外光学特性 von 吉田, 玄徳, 中田, 博保, 淀, 徳男

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Photoluminescence from electron-hole plasma in MOVPE grown ZnSe von NAKATA, H, YAMASHITA, K, YODO, T

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Defects in metalorganic chemical vapor deposition epitaxy-grown ZnSe films on GaAs investigated by monoenergetic positrons von WEI, L, CHO, Y.-K, DOSHO, C, TANIGAWA, S, YODO, T, YAMASHITA, K

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Epitaxial Growth of High Quality ZnSe on GaAs Substrate by Atmospheric Pressure MOVPE Using Dimethylzinc and Hydrogen Selenide von Yodo, Tokuo, Oka, Hidetoshi, Koyama, Tadashi, Yamashita, Ken

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Visible emissions near 1.9-2.2eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy von YODO, Tokuo, KITAYAMA, Yasunobu, MIYAKI, Kazunari, YONA, Hiroaki, HARADA, Yoshiyuki, PRINCE, Kathryn E, SCOTT, K, BUTCHER, A

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Influences of In 2 O 3 Crystal Grains Formed by Annealing on Characteristics of Hexagonal InN Crystalline Films Grown on Si(111) Substrates von Yodo, Tokuo, Kitayama, Yasunobu, Miyaki, Kazunari, Yona, Hiroaki, Harada, Yoshiyuki

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