Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001) von Wang, Wei, Zhou, Qian, Yuan, Dong, Tok, Eng Soon, Yee-Chia, Yeo

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A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study von Wu, Ying, Xu, Haiwen, Gong, Xiao, Yeo, Yee-Chia

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A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification von Xu, Haiwen, Wu, Ying, Yeo, Yee-Chia, Gong, Xiao

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Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality von Lei, Dian, Wang, Wei, Zhang, Zheng, Pan, Jisheng, Gong, Xiao, Liang, Gengchiau, Tok, Eng-Soon, Yeo, Yee-Chia

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Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications von Ruize Sun, Liang, Yung C., Yee-Chia Yeo, Cezhou Zhao

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GeSn-on-insulator substrate formed by direct wafer bonding von Lei, Dian, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Wang, Bing, Gong, Xiao, Tan, Chuan Seng, Yeo, Yee-Chia

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Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film von Wu, Ying, Luo, Sheng, Wang, Wei, Masudy-Panah, Saeid, Lei, Dian, Liang, Gengchiau, Gong, Xiao, Yeo, Yee-Chia

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In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector von Wang, Wei, Vajandar, Saumitra, Lim, Sin Leng, Dong, Yuan, D'Costa, Vijay Richard, Osipowicz, Thomas, Tok, Eng Soon, Yeo, Yee-Chia

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Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity von Wu, Ying, Xu, Haiwen, Gong, Xiao, Yeo, Yee-Chia

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Ballistic Transport Performance of Silicane and Germanane Transistors von Low, Kain Lu, Huang, Wen, Yeo, Yee-Chia, Liang, Gengchiau

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Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions von Yeo, Yee-Chia

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Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology von Masudy-Panah, Saeid, Wu, Ying, Lei, Dian, Kumar, Annie, Yeo, Yee-Chia, Gong, Xiao

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Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate von Wang, Wei, Li, Lingzi, Tok, Eng Soon, Yeo, Yee-Chia

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Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials von Low, Kain Lu, Yeo, Yee-Chia, Liang, Gengchiau

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Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion von Sun, Ruize, Liang, Yung C., Yeo, Yee‐Chia, Wang, Yun‐Hsiang, Zhao, Cezhou

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High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform von Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia

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New materials for post-Si computing: Ge and GeSn devices von Gupta, Suyog, Gong, Xiao, Zhang, Rui, Yeo, Yee-Chia, Takagi, Shinichi, Saraswat, Krishna C.

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Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate von Wang, Wei, Li, Lingzi, Zhou, Qian, Pan, Jisheng, Zhang, Zheng, Tok, Eng Soon, Yeo, Yee-Chia

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Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate von Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia

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All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs von Sun, Ruize, Liang, Yung C., Yeo, Yee-Chia, Zhao, Cezhou, Chen, Wanjun, Zhang, Bo

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