Breaking the Speed Limits of Phase-Change Memory von Loke, D., Lee, T. H., Wang, W. J., Shi, L. P., Zhao, R., Yeo, Y. C., Chong, T. C., Elliott, S. R.

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Low temperature direct wafer bonding of GaAs to Si via plasma activation von Yeo, C. Y., Xu, D. W., Yoon, S. F., Fitzgerald, E. A.

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Junctionless Π-gate transistor with indium gallium arsenide channel von Guo, H.X, Zhang, X, Zhu, Z, Kong, E.Y.J, Yeo, Y.-C

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Injection-induced De-doping in a Conducting Polymer during Device Operation: Asymmetry in the Hole Injection and Extraction Rates von Chia, P.-J., Chua, L.-L., Sivaramakrishnan, S., Zhuo, J.-M., Zhao, L.-H., Sim, W.-S., Yeo, Y.-C., Ho, P. K-H.

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Fermi pinning-induced thermal instability of metal-gate work functions von Yu, H.Y., Ren, C., Yee-Chia Yeo, Kang, J.F., Wang, X.P., Ma, H.H.H., Ming-Fu Li, Chan, D.S.H., Kwong, D.-L.

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Fast DNBTI components in p-MOSFET with SiON dielectric von Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Rustagi, S.C., Yu, M.B., Kwong, D.-L.

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N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide von Lee, R.T.P., Lim, A.E.-J., Kian-Ming Tan, Tsung-Yang Liow, Guo-Qiang Lo, Samudra, G.S., Dong Zhi Chi, Yee-Chia Yeo

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Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric von Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Kwong, D.-L.

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Electronic band structures and effective-mass parameters of wurtzite GaN and InN von Yeo, Y. C., Chong, T. C., Li, M. F.

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Work function tuning of metal nitride electrodes for advanced CMOS devices von Ren, C., Faizhal, B.B., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Trigg, A.D., Balasubramanian, N., Kwong, D.-L.

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A Self-Rectifying AlOy Bipolar RRAM With Sub-50-μA Set/Reset Current for Cross-Bar Architecture von TRAN, X. A, ZHU, W, LIU, W. J, YEO, Y. C, NGUYEN, B. Y, HONG YU YU

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Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well von Fan, W.J., Abiyasa, A.P., Tan, S.T., Yu, S.F., Sun, X.W., Xia, J.B., Yeo, Y.C., Li, M.F., Chong, T.C.

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Expression of Radical fringe in limb-bud ectoderm regulates apical ectodermal ridge formation von Laufer, Ed, Dahn, Randall, Orozco, Olivia E, Yeo, Chang-Yeol, Pisenti, Jacqueline, Henrique, Domingos, Abbott, Ursula K, Fallon, John F, Tabin, Cliff

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Self-Selection Unipolar HfOx-Based RRAM von TRAN, X. A, ZHU, W, LIU, W. J, YEO, Y. C, NGUYEN, B. Y, YU, H. Y

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Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs von Low, T., Ming-Fu Li, Samudra, G., Yee-Chia Yeo, Chunxiang Zhu, Chin, A., Dim-Lee Kwong

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Compact HSPICE model for IMOS device von LIN, J, TOH, E. H, SHEN, C, SYLVESTER, D, HENG, C. H, SAMUDRA, G, YEO, Y. C

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A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration von TRAN, X. A, YU, H. Y, NGUYEN, B. Y, LI, M. F, YEO, Y. C, WU, L, LIU, W. J, WANG, Z. R, FANG, Z, PEY, K. L, SUN, X. W, DU, A. Y

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A technical review of the laser drilling of aerospace materials von Yeo, C.Y., Tam, S.C., Jana, S., Lau, Michael W.S.

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Metal gate technology for nanoscale transistors—material selection and process integration issues von Yeo, Yee-Chia

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A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode von TRAN, X. A, ZHU, W. G, YU, H. Y, GAO, B, KANG, J. F, LIU, W. J, FANG, Z, WANG, Z. R, YEO, Y. C, NGUYEN, B. Y, LI, M. F

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