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  1. 1
    Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based device

    Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based device von Lin, Yuci, Xu, Ning, Cai, Wenbi, Yeh, Nientze, Liu, Cheng

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  2. 2
    EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

    EPITAXIAL STRUCTURE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME von CHANG, FUCHIN, LIU, BOTING, FANG, YUTAO, CHEN, SHUAI, YEH, NIENTZE

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  3. 3
    ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE, NITRIDE-BASED DEVICE HAVING THE SAME AND METHOD FOR MANUFACTURING NITRIDE-BASED DEVICE

    ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE, NITRIDE-BASED DEVICE HAVING THE SAME AND METHOD FOR MANUFACTURING NITRIDE-BASED DEVICE von XU, NING, CAI, WENBI, YEH, NIENTZE, LIN, YUCI, LIU, CHENG

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