P‑type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition von Li, Mengge, Yao, Jiadong, Wu, Xiaoxiang, Zhang, Shucheng, Xing, Boran, Niu, Xinyue, Yan, Xiaoyuan, Yu, Ying, Liu, Yali, Wang, Yewu

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Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device von Yao, Jiadong, Liu, Yali, Guo, Wenxuan, Niu, Xinyue, Li, Mengge, Wu, Xiaoxiang, Yu, Ying, Yan, Xiaoyuan, Xing, Boran, Zhang, Shucheng, Sha, Jian, Wang, Yewu

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Resistive memory based on single-crystalline black phosphorus flake/HfOx structure von Yan, Xiaoyuan, Wang, Xueting, Xing, Boran, Yu, Ying, Yao, Jiadong, Niu, Xinyue, Li, Mengge, Sha, Jian, Wang, Yewu

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Design and build MoS2/Au/MoS2 sandwich structure to significantly enhance the photoluminescence von Zhang, Shucheng, Guan, Liao, Niu, Xinyue, Yao, Jiadong, Yan, Xiaoyuan, Xing, Boran, Yu, Ying, Sha, Jian, Wang, Yewu

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Preparation of black phosphorus quantum dots and the surface decoration effect on the monolayer MoS2 photodetectors von Niu, Xinyue, Yu, Ying, Yao, Jiadong, Li, Mengge, Sha, Jian, Wang, Yewu

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Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction von Liu, Yali, Wu, Xiaoxiang, Guo, Wenxuan, Li, Mengge, Niu, Xinyue, Yao, Jiadong, Yu, Ying, Xing, Boran, Yan, Xiaoyuan, Zhang, Shucheng, Sha, Jian, Wang, Yewu

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HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio von Xing, Boran, Guan, Liao, Yu, Ying, Niu, Xinyue, Yan, Xiaoyuan, Zhang, Shucheng, Yao, Jiadong, Wang, Dan, Sha, Jian, Wang, Yewu

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Synthesis and electrical properties of single crystalline black phosphorus nanoribbons von Yu, Ying, Yao, Jiadong, Niu, Xinyue, Xing, Boran, Liu, Yali, Wu, Xiaoxiang, Li, Mengge, Yan, Xiaoyuan, Sha, Jian, Wang, Yewu

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Improvement in the quality of black phosphorus by selecting a mineralizer von Yu, Ying, Xing, Boran, Wang, Dan, Guan, Liao, Niu, Xinyue, Yao, Jiadong, Yan, Xiaoyuan, Zhang, Shucheng, Liu, Yali, Wu, Xiaoxiang, Sha, Jian, Wang, Yewu

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Photoluminescence enhancement by stacking bi-layer MoS2 without interlayer coupling von Zhang, Shucheng, Wang, Wei, Guan, Liao, Niu, Xinyue, Yao, Jiadong, Yan, Xiaoyuan, Xing, Boran, Yu, Ying, Sha, Jian, Wang, Yewu

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N-type doping of black phosphorus single crystal by tellurium von Yu, Ying, Xing, Boran, Yao, Jiadong, Niu, Xinyue, Liu, Yali, Wu, Xiaoxiang, Yan, Xiaoyuan, Li, Mengge, Sha, Jian, Wang, Yewu

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Single crystal growth of bulk SnS2 and high yield preparation of few-layer SnS2 von Wang, Dan, Guan, Liao, Yao, Jiadong, Yan, Xiaoyuan, Niu, Xinyue, Yu, Ying, Xing, Boran, Zhang, Shucheng, Wang, Yewu

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Readout electronics for thermal neutron detector array von Dong, Chunhui, Huang, Qichang, Ma, Xiao, Yao, Jiadong, Xiong, Hao, Shen, Fengzhao, Chen, Jian, Zhang, Jinglong, Zhou, Rong

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Design of a two-layer structure to significantly improve the performance of zinc oxide resistive memory von Yan, Xiaoyuan, Wang, Xueting, Wang, Dan, Li, Mengge, Guan, Liao, Yao, Jiadong, Niu, Xinyue, Xing, Boran, Yu, Ying, Tan, Mingqiu, Sha, Jian, Wang, Yewu

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P-type Doping in Large-Area Monolayer MoS 2 by Chemical Vapor Deposition von Li, Mengge, Yao, Jiadong, Wu, Xiaoxiang, Zhang, Shucheng, Xing, Boran, Niu, Xinyue, Yan, Xiaoyuan, Yu, Ying, Liu, Yali, Wang, Yewu

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HfO 2 -passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio von Xing, Boran, Guan, Liao, Yu, Ying, Niu, Xinyue, Yan, Xiaoyuan, Zhang, Shucheng, Yao, Jiadong, Wang, Dan, Sha, Jian, Wang, Yewu

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Surface charge transfer doping and effective passivation of black phosphorus field effect transistors von Xing, Boran, Yu, Ying, Yao, Jiadong, Niu, Xinyue, Yan, Xiaoyuan, Liu, Yali, Wu, Xiaoxiang, Li, Mengge, Guo, Wenxuan, Sha, Jian, Wang, Yewu

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Highly Sensitive Photodetector Based on the n‑Si/p-GaSe Vertical Heterojunction von Wu, Xiaoxiang, Liu, Yali, Li, Mengge, Guo, Wenxuan, Ou, Tianjian, Xiao, Cong, Yao, Jiadong, Yu, Ying, Zheng, Yuan, Wang, Yewu

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Enhanced performance of a n-Si/p-GaTe heterojunction through interfacial passivation and thermal oxidation von Liu, Yali, Wu, Xiaoxiang, Guo, Wenxuan, Li, Mengge, Xiao, Cong, Ou, Tianjian, Yao, Jiadong, Yu, Ying, Zheng, Yuan, Wang, Yewu

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Gate induced charge transfer and hysteresis enlargement in MoS2/GeSe2 vertical heterostructures von Yao, Jiadong, Guo, Wenxuan, Liu, Yali, Niu, Xinyue, Li, Mengge, Wu, Xiaoxiang, Yu, Ying, Ou, Tianjian, Sha, Jian, Wang, Yewu

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