In Situ Study of Reduction Process of CuO Paste and Its Effect on Bondability of Cu-to-Cu Joints von Yao, Takafumi, Matsuda, Tomoki, Sano, Tomokazu, Morikawa, Chiaki, Ohbuchi, Atsushi, Yashiro, Hisashi, Hirose, Akio

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Design and evaluation of omnidirectional one-dimensional photonic crystals von Lee, Hyun-Yong, Yao, Takafumi

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Polarity control of ZnO on sapphire by varying the MgO buffer layer thickness von Kato, Hiroyuki, Miyamoto, Kazuhiro, Sano, Michihiro, Yao, Takafumi

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Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN von Fujii, Katsushi, Ono, Masato, Iwaki, Yasuhiro, Sato, Keiichi, Ohkawa, Kazuhiro, Yao, Takafumi

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Plasma assisted molecular beam epitaxy of ZnO on c  -plane sapphire: Growth and characterization von Chen, Yefan, Bagnall, D. M., Koh, Hang-jun, Park, Ki-tae, Hiraga, Kenji, Zhu, Ziqiang, Yao, Takafumi

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Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN von Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro

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Correlation between grain size and optical properties in zinc oxide thin films von Matsumoto, Takahiro, Kato, Hiroyuki, Miyamoto, Kazuhiro, Sano, Michihiro, Zhukov, Evgeniy A., Yao, Takafumi

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Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy von Kato, Hiroyuki, Sano, Michihiro, Miyamoto, Kazuhiro, Yao, Takafumi

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Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation von Kayo Koike, Seogwoo Lee, Sung Ryong Cho, Jinsub Park, Hyojong Lee, Jun-Seok Ha, Soon-Ku Hong, Hyun-Yong Lee, Meoung-Whan Cho, Yao, T.

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Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer von Chen, Yefan, Ko, Hang-Ju, Hong, Soon-Ku, Yao, Takafumi

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Ordered Arrays of ZnO Nanorods Grown on Periodically Polarity-Inverted Surfaces von Lee, Sang Hyun, Minegishi, Tsutomu, Park, Jin Sub, Park, Seung Hwan, Ha, Jun-Seok, Lee, Hyo-Jong, Lee, Hyun-Jae, Ahn, Sungmo, Kim, Jaehoon, Jeon, Heonsu, Yao, Takafumi

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High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy von Kato, Hiroyuki, Sano, Michihiro, Miyamoto, Kazuhiro, Yao, Takafumi

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Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy von Ko, Hang-Ju, Yao, Takafumi, Chen, Yefan, Hong, Soon-Ku

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p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing von Park, Seung-Hwan, Minegishi, Tsutomu, Oh, Dong-Cheol, Chang, Ji-Ho, Yao, Takafumi, Taishi, Toshinori, Yonenaga, Ichiro

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Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods von Park, Jinsub, Goto, Takenari, Yao, Takafumi, Lee, Seogwoo, Cho, Moungwhan

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Second harmonic generation in periodically polarity-inverted zinc oxide von Park, Jinsub, Yamazaki, Yoshiki, Iwanaga, Masanobu, Ahn, Sungmo, Jeon, Heonsu, Fujiwara, Takumi, Yao, Takafumi

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High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy von Miyamoto, Kazuhiro, Sano, Michihiro, Kato, Hiroyuki, Yao, Takafumi

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Interface and defect structures in ZnO films on m-plane sapphire substrates von Lee, Jae Wook, Kim, Jung-Hyun, Han, Seok Kyu, Hong, Soon-Ku, Lee, Jeong Yong, Hong, Sun Ig, Yao, Takafumi

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Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process von Fujii, Katsushi, Lee, Seogwoo, Ha, Jun-Seok, Lee, Hyun-Jae, Lee, Hyo-Jong, Lee, Sang-Hyun, Kato, Takashi, Cho, Meoung-Whan, Yao, Takafumi

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Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures von Ohno, Yutaka, Tokumoto, Yuki, Yonenaga, Ichiro, Fujii, Katsushi, Yao, Takafumi, Yamamoto, Naoki

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