Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer von LEE, Dong Seup, YANG, Hong-Seon, KANG, Kwon-Chil, LEE, Joung-Eob, LEE, Jung Han, CHO, Seongjae, PARK, Byung-Gook

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Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices von LIM, Kwan-Yong, SUNG, Min-Gyu, KU, Ja-Chun, KIM, Jin-Woong, CHO, Heung-Jae, YONG SOO KIM, JANG, Se-Aug, SEUNG RYONG LEE, KIM, Kwangok, YANG, Hong-Seon, SOHN, Hyun-Chul, PYI, Seung-Ho

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Silicon-Based Dual-Gate Single-Electron Transistors for Logic Applications von Lee, Dong Seup, Yang, Hong-Seon, Kang, Kwon-Chil, Lee, Joung-Eob, Lee, Jung Han, Park, Sang Hyuk, Park, Byung-Gook

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Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron–Nitride for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Mem... von Sung, Min Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Kim, Yong-Soo, Hwang, Yun Taek, Jang, Se Aug, Yang, Hong-Seon, Ku, Ja Chun, Kim, Jin Woong

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Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation von PARK, Sang Hyuk, KANG, Sangwoo, CHO, Seongjae, LEE, Dong-Seup, LEE, Jung Han, YANG, Hong-Seon, KANG, Kwon-Chil, LEE, Joung-Eob, LEE, Jong Duk, PARK, Byung-Gook

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Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W∕WNx∕poly-Si gate MOSFET for high density DRAM applications von Lim, Kwan-Yong, Cho, Heung-Jae, Jang, Se-Aug, Kim, Yong Soo, Oh, Jae-Geun, Lee, Jung-Ho, Yang, Hong-Seon, Sohn, Hyun-Chul, Kim, Jin-Woong

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Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process von Lee, Joo-Wan, Kim, Jun Ki, Kim, Soo-Hyun, Sun, Ho-Jung, Yang, Hong-Seon, Sohn, Hyun Chul, Kim, Jin Woong

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Dual-Gate Single-Electron Transistor with Silicon Nano Wire Channel and Surrounding Side Gates von Lee, Dong Seup, Kang, Kwon-Chil, Lee, Joung-Eob, Yang, Hong-Seon, Lee, Jung Han, Park, Byung-Gook

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Reliability of Recess-channel Gate Cell Transistor under Gate-Induced Drain Leakage Stress and Positive Bias Fowler-Nordheim Gate Stress von Heung-Jae Cho, Yong Soo Kim, Se-Aug Jang, Tae-Yoon Kim, Kwan-Yong Lim, Min Gyu Sung, Moon Sig Joo, Seun Rryong Lee, Hong-Seon Yang, Jin-Woong Kim

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Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide von Cho, Heung-Jae, Lim, Kwan-Yong, Jang, Se-Aug, Lee, Jung-Ho, Oh, Jae-Geun, Kim, Yong Soo, Yang, Hong-Seon, Sohn, Hyun-Chul

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Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance von Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Seung Ryong Lee, Se-Aug Jang, Hong-Seon Yang, Kwangok Kim, Noh-Jung Kwak, Hyun-Chul Sohn, Jin Woong Kim

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Study of Plasma Damage at Recess-Channel Gate (RG) Structure During Plasma Nitridation von Heung-Jae Cho, Tae-Yoon Kim, Se-Aug Jang, Hyun Ahn, Yong Soo Kim, Kwan-Yong Lim, Min Gyu Sung, Hong-Seon Yang, Seung-Ho Pyi, Jin Woong Kim

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Low resistive tungsten dual polymetal gate process for high speed and high density memory devices von Yong Soo Kim, Kwan-Yong Lim, Min-Gyu Sung, Soo-Hyun Kim, Hong-Seon Yang, Heung-Jae Cho, Se-Aug Jang, Jae-Geun Oh, Kwangok Kim, Young-Kyun Jung, Tae-Woo Jung, Choon-Hwan Kim, Doek-Won Lee, Won Kim, Young-Hoon Kim, Kang-Sik Choi, Tae-Kyung Oh, Yun-Taek Hwang, Seung-Ho Pyi, Ja-chun Ku, Jin-Woong Kim

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Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices von Sung, Min Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Lee, Seung Ryong, Jang, Se-Aug, Kim, Yong Soo, Joo, Moon Sig, Lee, Ju-Hee, Kim, Tae-Yoon, Yang, Hong-Seon, Pyi, Seung-Ho, Kim, Jin Woong

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Utilization of nano/micro-size iron recovered from the fine fraction of automobile shredder residue for phenol degradation in water von SINGH, Jiwan, CHANG, Yoon-Young, YANG, Jae-Kyu, KANG, Seon-Hong, KODURU, Janardhan Reddy

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Effect of Liner Oxide Densification on Stress-Induced Leakage Current Characteristics in Shallow Trench Isolation Processing von Park, Jeong Hwan, Shin, Seung-Woo, Park, Sang-Wook, Kong, Young-Taek, Kim, Dong-Jin, Suh, Min-Suk, Lee, Seung-Cheol, Kwak, Noh-Yeal, Dong, Cha-Deok, Kim, Do-Woo, Lee, Geun-Il, Kwon, Oh-Jung, Yang, Hong-Seon

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Boron transport through surface channel pMOS using W-poly metal gate electrode: Poly Si doping condition and nitric oxide treatment effects von PARK, Sang-Wook, KIM, Dong-Jin, YANG, Hong-Seon, LEE, Chan-Ho, LEE, Seung-Cheol, KWAK, Noh-Yeal, SHIN, Seung-Woo, PARK, Jeong-Hwan, SUH, Min-Suk, KONG, Young-Taek, DONG, Cha-Deok

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Improvement on the reliability of flash EEPROM by annealing after self-aligned source dry etching von PARK, Sang-Wook, KIM, Dong-Jin, DONG, Cha-Deok, KWAK, Noh-Yeal, KONG, Young-Taek, LEE, Chan-Ho, LEE, Seung-Cheol, PARK, Se-Ho, KIM, Jong-Woo, YANG, Hong-Seon

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Optical monitoring of capacitance in hemispherical grain polycrystalline silicon for advanced dynamic random access memory application von LEE, S. B, KIM, J. O, RITZ, K. N, OPSAL, J, OH, H.-J, WOO, S.-H, SHIN, S.-W, HAN, I.-K, YANG, H.-S

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Reliability of MIM HAO capacitor for 70nm DRAM von Kwon Hong, Deok-Sin Kil, Hyun-Kyung Woo, Joosung Kim, Han-Sang Song, Ki-Seon Park, Seung-Jin Yeom, Hong-Seon Yang, Jae-Sung Roh, Hyun-Chul Sohn, Jin-Woong Kim, Sung-Wook Park

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