Si Diffusion in Compositional Disordering of Si-Implanted GaAs/AlGaAs Superlattices Induced by Rapid Thermal Annealing von UEMATSU, M, YANAGAWA, F

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Initial stage of CaF2 heteroepitaxy on GaAs(001) substrates von Waho, Takao, Yanagawa, Fumihiko, Yamada, Yasuko

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Compositional disordering of Si-implanted GaAs/AlGaAs superlattices by rapid thermal annealing von UEMATSU, M, YANAGAWA, F

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Compositional disordering of focused-Si-implanted GaAs/AlGaAs superlattices by rapid thermal annealing von UEMATSU, M, YANAGAWA, F

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Low-resistance ohmic contacts to p-GaAs von HIRANO, M, YANAGAWA, F

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Growth properties of AlxGa1-xAs grown by MOVPE using TEG and TMA von SHINOHARA, M, IMAMURA, Y, YANAGAWA, F

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High threshold voltage reproducibility for WSi/AlxGa1-xAs/GaAs MIS-like heterostructure FET von MARUO, T, ARAI, K, YANAGAWA, F

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Barrier height in indirect bandgap AlGaAs/GaAs hetero-junction determined with n-semiconductor/insulator/semiconductor diodes von MAEZAWA, K, MIZUTANI, T, YANAGAWA, F

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p-Channel AlGaAs/GaAs heterostructure FETS employing two-dimensional hole gas von HIRANO, M, OE, K, YANAGAWA, F

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Inhibiting effect of thermal oxides on the growth of rf plasma oxides for Pb-alloy Josephson junctions von WADA, M, NAKANO, J. I, YANAGAWA, F

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Threshold voltage behavior for WSi/AlxGa1-xAs/GaAs MIS-like heterostructure FET von ARAI, K, MIZUTANI, T, YANAGAWA, F

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A new p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two dimensional hole gas von OE, K, HIRANO, M, ARAI, K, YANAGAWA, F

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A GaAs MISFET using an MBE-grown CaF2 gate insulator layer von WAHO, T, YANAGAWA, F

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Initial stage of CaF 2 heteroepitaxy on GaAs(001) substrates von Waho, Takao, Yanagawa, Fumihiko, Yamada, Yasuko

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Growth Properties of Al x Ga 1-x As Grown by MOVPE Using TEG and TMA von Shinohara, Masanori, Imamura, Yoshihiro, Yanagawa, Fumihiko

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High Threshold Voltage Reproducibility for WSi/Al x Ga 1-x As/GaAs MIS-Like Heterostructure FET von Maruo, Tetsuya, Arai, Kunihiro, Yanagawa, Fumihiko

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Device characterization of p-channel AlGaAs/GaAs MIS-like heterostructure FET's von Hirano, M., Oe, K., Yanagawa, F., Tsubaki, K.

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Threshold Voltage Behavior for WSi/Al x Ga 1-x As/GaAs MIS-Like Heterostructure FET von Arai, Kunihiro, Mizutani, Takashi, Yanagawa, Fumihiko

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Resistance stability of AuIn2 thin-film resistors for Pb-alloy Josephson integrated circuits von Hasumi, Yuji, Arai, Kunihiro, Waho, Takao, Yanagawa, Fumihiko

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MANUFACTURE OF COMPOUND SEMICONDUCTOR ELEMENT von YANAGAWA FUMIHIKO, WAHO TAKAO

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