Negative Poisson’s ratio in 1T-type crystalline two-dimensional transition metal dichalcogenides von Yu, Liping, Yan, Qimin, Ruzsinszky, Adrienn

Volltext

Antisite defect qubits in monolayer transition metal dichalcogenides von Tsai, Jeng-Yuan, Pan, Jinbo, Lin, Hsin, Bansil, Arun, Yan, Qimin

Volltext

Learning atoms for materials discovery von Zhou, Quan, Tang, Peizhe, Liu, Shenxiu, Pan, Jinbo, Yan, Qimin, Zhang, Shou-Cheng

Volltext

Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations von Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, Kioupakis, Emmanouil

Volltext

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices von Kioupakis, Emmanouil, Yan, Qimin, Steiauf, Daniel, Van de Walle, Chris G

Volltext

Solar fuels photoanode materials discovery by integrating high-throughput theory and experiment von Yan, Qimin, Yu, Jie, Suram, Santosh K., Zhou, Lan, Shinde, Aniketa, Newhouse, Paul F., Chen, Wei, Li, Guo, Persson, Kristin A., Gregoire, John M., Neaton, Jeffrey B.

Volltext

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes von Kioupakis, Emmanouil, Yan, Qimin, Van de Walle, Chris G.

Volltext

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN von Moses, Poul Georg, Miao, Maosheng, Yan, Qimin, Van de Walle, Chris G.

Volltext

Role of nitrogen vacancies in the luminescence of Mg-doped GaN von Yan, Qimin, Janotti, Anderson, Scheffler, Matthias, Van de Walle, Chris G.

Volltext

Towards accurate prediction of configurational disorder properties in materials using graph neural networks von Fang, Zhenyao, Yan, Qimin

Volltext

Effects of strain on the band structure of group-III nitrides von Yan, Qimin, Rinke, Patrick, Janotti, Anderson, Scheffler, Matthias, Van de Walle, Chris G.

Volltext

Origins of optical absorption and emission lines in AlN von Yan, Qimin, Janotti, Anderson, Scheffler, Matthias, Van de Walle, Chris G.

Volltext

Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping von Yan, Qimin, Huang, Bing, Yu, Jie, Zheng, Fawei, Zang, Ji, Wu, Jian, Gu, Bing-Lin, Liu, Feng, Duan, Wenhui

Volltext

Bilayer Kagome Borophene with Multiple van Hove Singularities von Gao, Qian, Yan, Qimin, Hu, Zhenpeng, Chen, Lan

Volltext

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN von Yan, Qimin, Rinke, Patrick, Scheffler, Matthias, Van de Walle, Chris G.

Volltext

Two-dimensional MX Dirac materials and quantum spin Hall insulators with tunable electronic and topological properties von Zhang, Yan-Fang, Pan, Jinbo, Banjade, Huta, Yu, Jie, Lin, Hsin, Bansil, Arun, Du, Shixuan, Yan, Qimin

Volltext

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes von Zhang, Xie, Turiansky, Mark E., Razinkovas, Lukas, Maciaszek, Marek, Broqvist, Peter, Yan, Qimin, Lyons, John L., Dreyer, Cyrus E., Wickramaratne, Darshana, Gali, Ádám, Pasquarello, Alfredo, Van de Walle, Chris G.

Volltext

Pressure-controlled magnetism in 2D molecular layers von Huang, Yulong, Pathak, Arjun K., Tsai, Jeng-Yuan, Rumsey, Clayton, Ivill, Mathew, Kramer, Noah, Hu, Yong, Trebbin, Martin, Yan, Qimin, Ren, Shenqiang

Volltext

High Throughput Discovery of Solar Fuels Photoanodes in the CuO-V2O5 System von Zhou, Lan, Yan, Qimin, Shinde, Aniketa, Guevarra, Dan, Newhouse, Paul F., Becerra-Stasiewicz, Natalie, Chatman, Shawn M., Haber, Joel A., Neaton, Jeffrey B., Gregoire, John M.

Volltext

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells von Zhao, Yuji, Yan, Qimin, Huang, Chia-Yen, Huang, Shih-Chieh, Shan Hsu, Po, Tanaka, Shinichi, Pan, Chih-Chien, Kawaguchi, Yoshinobu, Fujito, Kenji, Van de Walle, Chris G., Speck, James S., DenBaars, Steven P., Nakamura, Shuji, Feezell, Daniel

Volltext