Electric field measurement for quantum-dot cellular automata clocking circuits von Yan, Minjun

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Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure von Lee, Jaesun, Yan, Minjun, Ofuonye, Benedict, Jang, Jaehyung, Gao, X., Guo, Shiping, Adesida, Ilesanmi

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A quantitative method for dual-pass electrostatic force microscopy phase measurements von Yan, Minjun, Bernstein, Gary H.

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Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures von Ofuonye, Benedict, Lee, Jaseun, Yan, Minjun, Sun, Changwoo, Zuo, Jian-Min, Adesida, Ilesanmi

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On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 μm von MEMIS, Omer Gokalp, KATSNELSON, Alex, MOHSENI, Hooman, MINJUN YAN, SHUANG ZHANG, HOSSAIN, Tim, NIU JIN, ADESIDA, Ilesanmi

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al2O3/SiNx Dielectric Layer von KIM, Donghyun, KUMAR, Vipan, LEE, Jaesun, MINJUN YAN, DABIRAN, A. M, WOWCHAK, A. M, CHOW, Peter P, ADESIDA, Ilesanmi

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PLAs in Quantum-Dot Cellular Automata von Crocker, M., Xiaobo Sharon Hu, Niemier, M., Minjun Yan, Bernstein, G.

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PD‐L1 regulates tumor proliferation and T‐cell function in NF2‐associated meningiomas von Wang, Ying, Zhang, Chao, Yan, Minjun, Ma, Xin, Song, Lairong, Wang, Bo, Li, Peng, Liu, Pinan

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On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox von Memis, O.G., Katsnelson, A., Mohseni, H., Minjun Yan, Shuang Zhang, Hossain, T., Niu Jin, Adesida, I.

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Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists von Choi, Sookyung, Yan, Minjun, Adesida, Ilesanmi

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Apparent height in tapping mode of electrostatic force microscopy von Yan, Minjun, Bernstein, Gary H.

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Sub-Poissonian shot noise of a high internal gain injection photon detector von Memis, Omer Gokalp, Katsnelson, Alex, Kong, Soon-Cheol, Mohseni, Hooman, Yan, Minjun, Zhang, Shuang, Hossain, Tim, Jin, Niu, Adesida, Ilesanmi

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Quilt Packaging: High-Density, High-Speed Interchip Communications von Bernstein, G.H., Qing Liu, Minjun Yan, Zhuowen Sun, Kopp, D., Porod, W., Snider, G., Fay, P.

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A photon detector with very high gain at low bias and at room temperature von Memis, Omer Gokalp, Katsnelson, Alex, Kong, Soon-Cheol, Mohseni, Hooman, Yan, Minjun, Zhang, Shuang, Hossain, Tim, Jin, Niu, Adesida, Ilesanmi

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Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes von Choi, Sookyung, Yan, Minjun, Wang, Liang, Adesida, Ilesanmi

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Elevated-Temperature Annealing Effects on AlGaN/GaN Heterostructures von Ofuonye, Benedict, Lee, Jaesun, Yan, Minjun, Fareed, Qhalid, Ahmad, Iftikhar, Khan, Asif, Adesida, Ilesanmi

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Low resistance Mo/AI/Mo/Au ohmic contact scheme to InAIN/AIN/GaN heterostructure von LEE, Jaesun, MINJUN YAN, OFUONYE, Benedict, JAEHYUNG JANG, GAO, X, SHIPING GUO, ADESIDA, Ilesanmi

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Elevated-Temperature Annealing Effects on AIGaN/GaN Heterostructures von OFUONYE, Benedict, LEE, Jaesun, MINJUN YAN, FAREED, Qhalid, AHMAD, Iftikhar, KHAN, Asif, ADESIDA, Ilesanmi

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an \hbox\hbox/\hbox Dielectric Layer von Donghyun Kim, Kumar, V., Jaesun Lee, Minjun Yan, Dabiran, A.M., Wowchak, A.M., Chow, P.P., Adesida, I.

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an [Formula Omitted] Dielectric Layer von Kim, Donghyun, Kumar, V, Lee, Jaesun, Yan, Minjun, Dabiran, A.M, Wowchak, A.M, Chow, P.P, Adesida, I

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