Design of a 60 GHz Slot Filtenna Array Using Gap Waveguide Feed Network von Chen, Chao, Chen, Jixin, Yan, Pinpin, Wen, Letian, Hong, Wei

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An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range von Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Yu, Jiayang, Hou, Debin, Gao, Hao, Hong, Wei

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A 300-GHz Transmitter Front End With −4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm SiGe BiCMOS Technology von Yu, Jiayang, Chen, Jixin, Zhou, Peigen, Li, Zekun, Li, Huanbo, Yan, Pinpin, Hou, Debin, Hong, Wei

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A compact multilayer substrate integrated waveguide quasi‐elliptic bandpass filter for millimeter‐wave applications von Zhang, Zhiyuan, Zhu, Yuanwei, Zhang, Zijian, Yan, Pinpin

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A 150-GHz Transmitter With 12-dBm Peak Output Power Using 130-nm SiGe:C BiCMOS Process von Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Yu, Jiayang, Li, Huanbo, Hou, Debin, Gao, Hao, Hong, Wei

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Full-Angle Digital Predistortion of 5G Millimeter-Wave Massive MIMO Transmitters von Yu, Chao, Jing, Jianxin, Shao, Han, Jiang, Zhi Hao, Yan, Pinpin, Zhu, Xiao-Wei, Hong, Wei, Zhu, Anding

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W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication von Li, Huanbo, Chen, Jixin, Hou, Debin, Li, Zekun, Zhou, Rui, Chen, Zhe, Yan, Pinpin, Hong, Wei

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A −28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11aj von Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Yu, Jiayang, Hu, Jiarui, Dong, Haoyi, Wang, Long, Hou, Debin, Gao, Hao, Hong, Wei

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A 211-to-263-GHz Dual- LC -Tank-Based Broadband Power Amplifier With 14.7-dBm P SAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS von Yu, Jiayang, Chen, Jixin, Zhou, Peigen, Li, Huanbo, Wang, Zuojun, Li, Zekun, Chen, Zhe, Yan, Pinpin, Hou, Debin, Gao, Hao, Hong, Wei

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A Low Phase Noise Dual-Loop Dual-Output Frequency Synthesizer in SiGe BiCMOS von Chen, Zhe, Hou, Debin, Chen, Jixin, Yan, Pinpin

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A 220-GHz Power Amplifier With 22.5-dB Gain and 9-dBm P sat in 130-nm SiGe von Li, Zekun, Chen, Jixin, Li, Huanbo, Wang, Zuojun, Hou, Debin, Yan, Pinpin, Chen, Zhe, Hong, Wei

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A 250-GHz Differential SiGe Amplifier With 21.5-dB Gain for Sub-THz Transmitters von Li, Huanbo, Chen, Jixin, Hou, Debin, Zhou, Peigen, Yu, Jiayang, Yan, Pinpin, Peng, Lin, Lu, Haiyan, Hong, Wei

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SIW Cavity-Fed Filtennas for 5G Millimeter-Wave Applications von Lu, Rong, Yu, Chao, Wu, Fan, Yu, Zhiqiang, Zhu, Liyu, Zhou, Jianyi, Yan, Pinpin, Hong, Wei

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Transformer matched gilbert mixer with active balun for D band transmitter von Yu, Jiayang, Chen, Jixin, Li, Huanbo, Zhou, Peigen, Hou, Debin, Hong, Wei, Yan, Pinpin

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A 273.5-312-GHz Signal Source With 2.3 dBm Peak Output Power in a 130-nm SiGe BiCMOS Process von Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Chen, Zhe, Hou, Debin, Hong, Wei

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A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process von Zhou, Peigen, Yan, Pinpin, Chen, Jixin, Chen, Zhe, Hong, Wei

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A 40–50 GHz RF Front-End with Integrated Local Oscillator Leakage Calibration von Zhou, Peigen, Yan, Pinpin, Chen, Jixin, Chen, Zhe, Hong, Wei

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A Compact 10–14.5 GHz Quadrature Hybrid with Digitally Reconfigurable I/Q Phase in SiGe BiCMOS Process von Chen, Zhe, Xu, Xiaojie, Hou, Debin, Zhou, Peigen, Yan, Pinpin, Chen, Jixin

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280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate von Lu, Haiyan, Chen, Jixin, Yan, Pinpin, Tang, Si‐Yuan, Zheng, Yu, Zheng, Sidou, Cheng, Wei, Sun, Yan, Zhou, Peigen, Chang, Long, Cai, Longzhu, Jiang, Zhi Hao, Tao, Hongqi, Chen, Tangsheng, Hong, Wei

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A W-Band Transformer-Based Power Amplifier with Anti-Pair Capacitors in 0.13-μm SiGe BiCMOS von Li, Huanbo, Chen, Jixin, Hou, Debin, Yan, Pinpin, Hong, Wei

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