Blue photo luminescence from 3 mol%Y2O3-doped ZrO2 polycrystals sintered by flash sintering under an alternating current electric field von Yamashita, Yudai, Kurachi, Tsuyoshi, Tokunaga, Tomoharu, Yoshida, Hidehiro, Yamamoto, Takahisa

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Effects of Ba-to-Si deposition rate ratios on the electrical and photoresponse properties of arsenic-doped n-type BaSi2 films von Aonuki, Sho, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films von Takabe, Ryota, Deng, Tianguo, Kodama, Komomo, Yamashita, Yudai, Sato, Takuma, Toko, Kaoru, Suemasu, Takashi

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Suppression of nitridation of yttria‐doped zirconia during flash sintering von Kurachi, Tsuyoshi, Yamashita, Yudai, Tokunaga, Tomoharu, Yoshida, Hidehiro, Yamamoto, Takahisa

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Operation of BaSi2 homojunction solar cells on p+-Si(111) substrates and the effect of structure parameters on their performance von Kodama, Komomo, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Low thermal conductivity of complex thermoelectric barium silicide film epitaxially grown on Si von Ishibe, Takafumi, Chikada, Jinichiro, Terada, Tsukasa, Komatsubara, Yuki, Kitaura, Reona, Yachi, Suguru, Yamashita, Yudai, Sato, Takuma, Suemasu, Takashi, Nakamura, Yoshiaki

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Formation of high-photoresponsivity BaSi2 films on glass substrate by radio-frequency sputtering for solar cell applications von Koitabashi, Ryota, Nemoto, Taira, Yamashita, Yudai, Mesuda, Masami, Toko, Kaoru, Suemasu, Takashi

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Assessing defect-assisted emissions in indirect bandgap BaSi2 by photoluminescence von Mohmad, Abdul Rahman, Xu, Zhihao, Yamashita, Yudai, Suemasu, Takashi

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Zn1-xGexOy Passivating Interlayers for BaSi2 Thin-Film Solar Cells von Yamashita, Yudai, Takayanagi, Kaori, Gotoh, Kazuhiro, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

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Three-step growth of highly photoresponsive BaSi2 light absorbing layers with uniform Ba to Si atomic ratios von Yamashita, Yudai, Sato, Takuma, Saitoh, Noriyuki, Yoshizawa, Noriko, Toko, Kaoru, Suemasu, Takashi

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High-temperature post-annealing effect on the surface morphology and photoresponse and electrical properties of B-doped BaSi2 films grown by molecular beam epitaxy under various Ba... von Narita, Shunsuke, Yamashita, Yudai, Aonuki, Sho, Saitoh, Noriyuki, Toko, Kaoru, Suemasu, Takashi

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p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111) von Deng, Tianguo, Sato, Takuma, Xu, Zhihao, Takabe, Ryota, Yachi, Suguru, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Device operation of P‐ion‐implanted n‐BaSi2/p‐Si heterojunction solar cells von Aonuki, Sho, Yamashita, Yudai, Limodio, Gianluca, Narita, Shunsuke, Takayanagi, Kaori, Iwai, Ai, Toko, Kaoru, Zeman, Miro, Olindo Isabella, Suemasu, Takashi

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Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111) von Haku, Yurika, Aonuki, Sho, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Expression and localization of alpha-tubulin N-acetyltransferase 1 in the reproductive system of male mice von YANAI, Rin, YAMASHITA, Yudai, UMEZU, Kohei, HIRADATE, Yuuki, HARA, Kenshiro, TANEMURA, Kentaro

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Fabrication of As-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy von Aonuki, Sho, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Demonstration of B-ion-implanted p-BaSi2/n-Si heterojunction solar cells von Aonuki, Sho, Narita, Shunsuke, Takayanagi, Kaori, Iwai, Ai, Yamashita, Yudai, Toko, Kaoru, Suemasu, Takashi

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Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman spectroscopy von Yamashita, Yudai, Takahara, Yuuki, Sato, Takuma, Toko, Kaoru, Uedono, Akira, Suemasu, Takashi

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Solar cell operation of sputter-deposited n-BaSi2/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy von Nemoto, Taira, Aonuki, Sho, Koitabashi, Ryota, Yamashita, Yudai, Mesuda, Masami, Toko, Kaoru, Suemasu, Takashi

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High-temperature post-annealing effect on the device performance of B-doped p-type BaSi2/n-Si heterojunction solar cells grown by molecular beam epitaxy von Narita, Shunsuke, Aonuki, Sho, Yamashita, Yudai, Takayanagi, Kaori, Toko, Kaoru, Suemasu, Takashi

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