Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films von Hayashi, Kazushi, Yamanaka, Sadanori, Watanabe, Hideyuki, Sekiguchi, Takashi, Okushi, Hideyo, Kajimura, Koji

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High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron von Yamanaka, Sadanori, Watanabe, Hideyuki, Masai, Shigeo, Takeuchi, Daisuke, Okushi, Hideyo, Kajimura, Koji

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Hydrogen depth-profiling in chemical-vapor-deposited diamond films by high-resolution elastic recoil detection von Kimura, Kenji, Nakajima, Kaoru, Yamanaka, Sadanori, Hasegawa, Masataka, Okushi, Hideyo

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Schottky junction properties of the high conductivity layer of diamond von Takeuchi, Daisuke, Yamanaka, Sadanori, Okushi, Hideyo

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n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition von Hasegawa, Masataka, Takeuchi, Daisuke, Yamanaka, Sadanori, Ogura, Masahiko, Watanabe, Hideyuki, Kobayashi, Naoto, Okushi, Hideyo, Kajimura, Koji

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Spatial uniformity of Schottky contacts between aluminum and hydrogenated homoepitaxial diamond films von Takeuchi, Daisuke, Yamanaka, Sadanori, Watanabe, Hideyuki, Okushi, Hideyo, Kajimura, Koji

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Origin of band-A emission in homoepitaxial diamond films von Takeuchi, Daisuke, Watanabe, Hideyuki, Sawada, Hidetaka, Yamanaka, Sadanori, Ichinose, Hideki, Sekiguchi, Takashi, Okushi, Hideyo

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Temperature Dependence of Photocurrent and Band Gap of Cl-Doped Semi-Insulating CdTe with Evaporated Au Electrodes von Yamanaka, Sadanori, Tsushima, Shugo, Shimizu, Hidetoshi, Tokumaru, Yozo

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High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 µm Gate Length von Umezawa, Hitoshi, Tsugawa, Kazuo, Yamanaka, Sadanori, Takeuchi, Daisuke, Okushi, Hideyo, Kawarada, Hiroshi

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Homoepitaxial diamond film with an atomically flat surface over a large area von Watanabe, Hideyuki, Takeuchi, Daisuke, Yamanaka, Sadanori, Okushi, Hideyo, Kajimura, Koji, Sekiguchi, Takashi

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Homoepitaxial diamond films with large terraces von Hayashi, Kazushi, Yamanaka, Sadanori, Okushi, Hideyo, Kajimura, Koji

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Misorientation angle dependence of surface morphology in homoepitaxial diamond film growth at a low CH4/H2 ratio von RI, Sung-Gi, YOSHIDA, Hiroaki, YAMANAKA, Sadanori, WATANABE, Hideyuki, TAKEUCHI, Daisuke, OKUSHI, Hideyo

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Light Emitting Device von YAMANAKA SADANORI

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Semiconductor wafer, method of producing semiconductor wafer, and heterojunction bipolar transistor von Yamanaka Sadanori, Nakano Tsuyoshi, Nishikawa Naohiro

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SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE von TAKADA TOMOYUKI, YAMANAKA SADANORI

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Semiconductor substrate, semiconductor device, and production method for semiconductor substrate von TAKADA TOMOYUKI, HATA MASAHIKO, YAMANAKA SADANORI

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Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films von Hayashi, Kazushi, Watanabe, Hideyuki, Yamanaka, Sadanori, Sekiguchi, Takashi, Okushi, Hideyo, Kajimura, Koji

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Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device von TAKADA TOMOYUKI, HATA MASAHIKO, YAMANAKA SADANORI

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Semiconductor wafer, semiconductor wafer manufacturing method, and electronic device von TAKADA TOMOYUKI, HATA MASAHIKO, YAMANAKA SADANORI

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Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate von TAKADA TOMOYUKI, HATA MASAHIKO, YAMANAKA SADANORI

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