An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs von Kutsuki, Katsuhiro, Kagoshima, Eiji, Onishi, Toru, Saito, Jun, Yamamoto, Kensaku, Watanabe, Yukihiko

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Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor von Takeuchi, Wakana, Yamamoto, Kensaku, Sakashita, Mitsuo, Nakatsuka, Osamu, Zaima, Sigeaki

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Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs von Kutsuki, Katsuhiro, Murakami, Yuki, Watanabe, Yukihiko, Onishi, Toru, Yamamoto, Kensaku, Fujiwara, Hirokazu, Ito, Takahiro

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Impact of optical phonon scattering on inversion channel mobility in 4H-SiC trenched MOSFETs von Kutsuki, Katsuhiro, Kawaji, Sachiko, Watanabe, Yukihiko, Onishi, Toru, Fujiwara, Hirokazu, Yamamoto, Kensaku, Yamamoto, Toshimasa

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Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide von Yamamoto, Kensaku, Yamamoto, T., Watanabe, H., Okuno, E., Nagaya, M., Onda, S.

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Effects of nitridation for SiO2/SiC interface on defect properties near the conduction band edge von Takeuchi, Wakana, Yamamoto, Kensaku, Taoka, Noriyuki, Sakashita, Mitsuo, Kanemura, Takashi, Nakatsuka, Osamu, Zaima, Shigeaki

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Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs von Tsujimura, Masatoshi, Watanabe, Yukihiko, Fujiwara, Hirokazu, Kawaji, Sachiko, Kutsuki, Katsuhiro, Onishi, Toru, Kanemura, Takashi, Yamamoto, Kensaku

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Thermal stability of GaN on (1 1 1) Si substrate von Ishikawa, Hiroyasu, Yamamoto, Kensaku, Egawa, Takashi, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi

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Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs von Kutsuki, Katsuhiro, Watanabe, Yukihiko, Yamashita, Yusuke, Soejima, Narumasa, Kataoka, Keita, Onishi, Toru, Yamamoto, Kensaku, Fujiwara, Hirokazu

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Effect of Activation Annealing and Reactive Ion Etching on MOS Channel Properties of (11-20) Oriented 4H-SiC von Chow, T. Paul, Chowdhury, Sauvik, Yamamoto, Kensaku

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Study of Mobility Limiting Mechanisms in (11-20) 4H-SiC NO Annealed MOSFETs von Chow, T. Paul, Chowdhury, Sauvik, Yamamoto, Kensaku

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Characteristics of MOS Capacitors with NO and POCl sub(3) Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC von Chowdhury, Sauvik, Yamamoto, Kensaku, Hitchcock, Collin, Chow, T Paul

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Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC von Chow, T. Paul, Chowdhury, Sauvik, Yamamoto, Kensaku, Hitchcock, Collin W.

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Effects of wet-POA with various conditions on 4H-SiC m-face MOS interface properties von Chu, Qiao, Yamamoto, Kensaku, Shimizu, Sumera, Kita, Koji

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Effects of nitridation for SiO sub(2)/SiC interface on defect properties near the conduction band edge von Takeuchi, Wakana, Yamamoto, Kensaku, Taoka, Noriyuki, Sakashita, Mitsuo, Kanemura, Takashi, Nakatsuka, Osamu, Zaima, Shigeaki

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Effects of nitridation for SiO 2 /SiC interface on defect properties near the conduction band edge von Takeuchi, Wakana, Yamamoto, Kensaku, Taoka, Noriyuki, Sakashita, Mitsuo, Kanemura, Takashi, Nakatsuka, Osamu, Zaima, Shigeaki

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Research on Achievement of Both Thermal Efficiency Enhancement and NOx Reduction in Natural Gas Lean-burn Engine (Third Report): Efficiency Verification from the Viewpoint of Engin... von Yamamoto, Kensaku, Nakano, Hideaki, Kobayashi, Shinichi, Nada, Yuzuru, Kidoguchi, Yoshiyuki

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Angular velocity sensor element and angular velocity sensor using same von Yamamoto, Kensaku

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Angular velocity detection device and angular velocity sensor including the same von Yamamoto Kensaku

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Reactions of azulenes with 1,2-diaryl-1,2-ethanediols in methanol in the presence of hydrochloric acid: comparative studies on products, crystal structures, and spectroscopic and e... von Nakatsuji, Miwa, Hata, Yasuhito, Fujihara, Takeshi, Yamamoto, Kensaku, Sasaki, Masato, Takekuma, Hideko, Yoshihara, Masakuni, Minematsu, Toshie, Takekuma, Shin-ichi

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