Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Oxidation on C-Face 4H-SiC von Sasago, Tomoya, Yamahori, Shunta, Nohira, Hiroshi

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Detection of Effect of Strain on the Valence Band Structure of SiGe by HXPES with High Spatial Resolution von Yamahori, Shunta, Sasago, Tomoya, Sakurai, Takuya, Yonekura, Eisuke, Sawano, Kentarou, Ikenaga, Eiji, Nohira, Hiroshi

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IMAGE FORMING APPARATUS, FAULT SENSING METHOD, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM STORING FAULT SENSING PROGRAM von KONDOH, Tomohide, YAMAHORI, Shunta, MATSUDA, Yuuji, IEIRI, Yuji, OKAMURA, Hiroshi

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Detection of Effect of Strain and Composition on the Valence Band of SiGe by HXPES with High Spatial Resolution and XPS von Yamahori, Shunta, Sasago, Tomoya, Yonekura, Eisuke, Sawano, Kentarou, Ikenaga, Eiji, Nohira, Hiroshi

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Detection of Effect of the difference of Uniaxial Strain on the Valence Band of SiGe by HXPES with High Spatial Resolution von Yamahori, Shunta, Sakurai, Takuya, Yonekubo, Shun, Arai, Jin, Sawano, Kentarou, Ikenaga, Eiji, Nohira, Hiroshi

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Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Oxidation on C-Face 4H-SiC von Sasago, Tomoya, Yamahori, Shunta, Nohira, Hiroshi

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Detection of Effect of Strain on the Valence Band Structure of SiGe by HXPES with High Spatial Resolution von Yamahori, Shunta, Sasago, Tomoya, Sakurai, Takuya, Yonekura, Eisuke, Sawano, Kentarou, Ikenaga, Eiji, Nohira, Hiroshi

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高空間分解能HXPESとXPSによる歪み及び組成がSiGe価電子帯に与える影響の検出 von 山堀, 俊太, 笹子, 知弥, 米倉, 瑛介, 澤野, 憲太郎, 池永, 英司, 野平, 博司

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高空間分解能HXPESによる一軸歪み量の違いがSiGe価電子帯に与える影響の検出 von 山堀, 俊太, 櫻井, 拓也, 米窪, 駿, 荒井, 仁, 澤野, 憲太郎, 池永, 英司, 野平, 博司

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