Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates von Araki, Yoshiaki, Yamaguchi, Masahito, Ishikawa, Fumitaro

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Application of bis-2-(trimethylsilyl)ethyl diselenide to the synthesis of selenium-containing amino acid derivatives von Yonezawa, Tsubasa, Yamaguchi, Masahito, Ninomiya, Masayuki, Koketsu, Mamoru

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Effects of exciton localization on internal quantum efficiency of InGaN nanowires von Murotani, Hideaki, Yamada, Yoichi, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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Selective Synthesis of Compound Semiconductor/Oxide Composite Nanowires von Hibi, Hideaki, Yamaguchi, Masahito, Yamamoto, Naoki, Ishikawa, Fumitaro

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Effects of growth interruption, As and Ga fluxes, and nitrogen plasma irradiation on the molecular beam epitaxial growth of GaAs/GaAsN core-shell nanowires on Si(111) von Ahn, Namsoo, Araki, Yoshiaki, Kondow, Masahiko, Yamaguchi, Masahito, Ishikawa, Fumitaro

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Growth and properties of semi-polar GaN on a patterned silicon substrate von Sawaki, Nobuhiko, Hikosaka, Toshiki, Koide, Norikatsu, Tanaka, Shigeyasu, Honda, Yoshio, Yamaguchi, Masahito

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Electrical and optical spin injection in ferromagnet/semiconductor heterostructures von Taniyama, Tomoyasu, Wada, Eiji, Itoh, Mitsuru, Yamaguchi, Masahito

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Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy von Doi, Tomohiro, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (111)Si substrates von Paek, Jihyun, Yamaguchi, Masahito, Amano, Hiroshi

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Nature of yellow luminescence band in GaN grown on Si substrate von Ito, Shogo, Nakagita, Taihei, Sawaki, Nobuhiko, Ahn, Hyung Soo, Irie, Masashi, Hikosaka, Toshiki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays von Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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Growth of ( [formula omitted]) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE von Honda, Yoshio, Kameshiro, Norifumi, Yamaguchi, Masahito, Sawaki, Nobuhiko

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GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy von Nakagawa, Shinta, Tabata, Takuya, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate von Yamaguchi, Masahito, Paek, Ji-Hyun, Amano, Hiroshi

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Growth of InGaN nanowires on a (111)Si substrate by RF-MBE von Tabata, Takuya, Paek, Jihyun, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer von Yamada, Takaya, Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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GaN Overgrowth on Thermally Etched Nanoporous GaN Template von Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes von Tanikawa, Tomoyuki, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates von Son, Ji-Su, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi, Baik, Kwang Hyeon, Seo, Yong Gon, Hwang, Sung-Min

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Stacking Faults and Luminescence Property of InGaN Nanowires von Tabata, Takuya, Paek, Jihyun, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi

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