On the direction of the conductive filament growth in valence change memory devices during electroforming von Kalaev, D., Yalon, E., Riess, I.

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Detection of the insulating gap and conductive filament growth direction in resistive memories von Yalon, E, Karpov, I, Karpov, V, Riess, I, Kalaev, D, Ritter, D

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Validation and Extension of Local Temperature Evaluation of Conductive Filaments in RRAM Devices von Yalon, E., Gavrilov, A., Cohen, S., Ritter, D.

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Evaluation of the local temperature of conductive filaments in resistive switching materials von Yalon, E, Cohen, S, Gavrilov, A, Ritter, D

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Resistive Switching in HfO2 Probed by a Metal-Insulator-Semiconductor Bipolar Transistor von YALON, E, GAVRILOV, A, COHEN, S, MISTELE, D, MEYLER, B, SALZMAN, J, RITTER, D

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A Degenerately Doped In0.53Ga0.47As Bipolar Junction Transistor von YALON, E, COHEN ELIAS, D, GAVRILOV, A, COHEN, S, HALEVY, R, RITTER, D

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479P Synergistic anti-tumor effect of Allocetra-OTS in combination with immune checkpoint inhibitors (ICI)/chemotherapy/CAR T, through in-vivo reprogramming of macrophages von Mevorach, D., Yalon, E., Regev, E., Ankri, C., Hershkovitz, O., Shabat, Y., Reicher, B.

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A Degenerately Doped \hbox\hbox \hbox Bipolar Junction Transistor von Yalon, E, Elias, D C, Gavrilov, A, Cohen, S, Halevy, R, Ritter, D

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Wear-out and breakdown of Ta2O5/Nb:SrTiO3 stacks von Boyeras Baldomá, S., Pazos, S.M., Aguirre, F.L., Ankonina, G., Kornblum, L., Yalon, E., Palumbo, F.

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Resistive Switching in \hbox Probed by a Metal-Insulator-Semiconductor Bipolar Transistor von Yalon, E., Gavrilov, A., Cohen, S., Mistele, D., Meyler, B., Salzman, J., Ritter, D.

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Resistive Switching in hbox HfO 2 Probed by a Metal-Insulator-Semiconductor Bipolar Transistor von Yalon, E, Gavrilov, A, Cohen, S, Mistele, D, Meyler, B, Salzman, J, Ritter, D

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Resistive Switching in [Formula Omitted] Probed by a Metal-Insulator-Semiconductor Bipolar Transistor von Yalon, E, Gavrilov, A, Cohen, S, Mistele, D, Meyler, B, Salzman, J, Ritter, D

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A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor von Yalon, E, Elias, D. Cohen, Gavrilov, A, Cohen, S, Halevy, R, Ritter, D

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A Degenerately Doped hbox In 0.53 hbox Ga 0.47 hbox As Bipolar Junction Transistor von Yalon, E, Elias, DCohen, Gavrilov, A, Cohen, S, Halevy, R, Ritter, D

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Field-Induced Nucleation in the Presence of a Metal Electrode von Karpov, V. G., Maltby, R. E. E., Karpov, I. V., Yalon, E.

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Validation and extension of the temperature extraction method of conductive filaments in resistive switching materials von Yalon, E., Gavrilov, A., Cohen, S., Ritter, D.

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Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces von Yalon, Eilam, Gavrilov, Arkadi, Cohen, Shimon, Mistele, David, Mikhelashvili, Vissarion, Meyler, Boris, Salzman, Joseph, Ritter, Dan

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Field induced nucleation in the presence of a metal electrode von Karpov, V. G, Maltby, R. E. E, Karpov, I. V, Yalon, E

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Intraocular pressure reduction induced by hornet venom in the normal eye von Ishay, J.S, Yalon, M.E

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Recommended Methods to Study Resistive Switching Devices von Lanza, M, Wong, HSP, Pop, E, Ielmini, D, Strukov, D, Regan, BC, Larcher, L, Villena, MA, Yang, JJ, Goux, L, Belmonte, A, Yang, Y, Puglisi, FM, Kang, J, Magyari-Köpe, B, Yalon, E, Kenyon, A, Buckwell, M, Mehonic, A, Shluger, A, Li, H, Hou, TH, Hudec, B, Akinwande, D, Ge, R, Ambrogio, S, Roldan, JB, Miranda, E, Suñe, J, Pey, KL, Wu, X, Raghavan, N, Wu, E, Lu, WD, Navarro, G, Zhang, W, Wu, H, Li, R, Holleitner, A, Wurstbauer, U, Lemme, MC, Liu, M, Long, S, Liu, Q, Lv, H, Padovani, A, Pavan, P, Valov, I, Jing, X, Han, T, Zhu, K, Chen, S, Hui, F, Shi, Y

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