Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface von Lin, Chia-Hung, Hatta, Naoki, Konishi, Keita, Watanabe, Shinya, Kuramata, Akito, Yagi, Kuniaki, Higashiwaki, Masataka

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Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects von Nagasawa, Hiroyuki, Abe, Masayuki, Yagi, Kuniaki, Kawahara, Takamitsu, Hatta, Naoki

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Ab initio density functional theory calculation of stacking fault energy and stress in 3C-SiC von Umeno, Yoshitaka, Yagi, Kuniaki, Nagasawa, Hiroyuki

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Core element effects on dislocation nucleation in 3C–SiC: Reaction pathway analysis von Sun, Yu, Izumi, Satoshi, Sakai, Shinsuke, Yagi, Kuniaki, Nagasawa, Hiroyuki

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3C-SiC hetero-epitaxial growth on undulant Si(0 0 1) substrate von Nagasawa, Hiroyuki, Yagi, Kuniaki, Kawahara, Takamitsu

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Saddle-shape warpage of thick 3C-SiC wafer: Effect of nonuniform intrinsic stress and stacking faults von Sun, Yu, Izumi, Satoshi, Sakai, Shinsuke, Yagi, Kuniaki, Nagasawa, Hiroyuki

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Reliable Method for Eliminating Stacking Fault on 3C-SiC(001) von Schöner, Adolf, Reshanov, Sergey A., Nagasawa, Hiroyuki, Yagi, Kuniaki, Hatta, Naoki, Kawahara, Takamitsu

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‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC von Nagasawa, Hiroyuki, Yagi, Kuniaki, Hatta, Naoki, Kawahara, Takamitsu

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Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates von Nagasawa, Hiroyuki, Kawahara, Takamitsu, Yagi, Kuniaki

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Retraction notice to “Interactions between planar defects in bulk 3C-SiC” [Journal of Crystal Growth, 389 (2014) 108-111] von Ikebe, Yohei, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Yagi, Kuniaki

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Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC von Yagi, Kuniaki, Uchida, Hidetsugu, Kobayashi, Motoki, Zippelius, Bernd, Abe, Masayuki, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Pensl, Gerhard

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Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes von Yagi, Kuniaki, Zippelius, Bernd, Uchida, Hidetsugu, Kobayashi, Motoki, Krieger, M., Weber, Heiko B., Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Pensl, Gerhard

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Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates von Kojima, Kazutoshi, Masumoto, Keiko, Hatta, Naoki, Ozono, Kunihide, Harada, Shinsuke, Yagi, Kuniaki, Ishikawa, Seiji, Kobayashi, Motoki, Kurihara, Shunsuke

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Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate von Nagasawa, Hiroyuki, Yagi, Kuniaki, Hatta, Naoki, Kawahara, Takamitsu

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RETRACTED: Interactions between planar defects in bulk 3C-SiC von Ikebe, Yohei, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Yagi, Kuniaki

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RETRACTED: Interactions between planar defects in bulk 3C-SiC von Ikebe, Yohei, Nagasawa, Hiroyuki, Hatta, Naoki, Kawahara, Takamitsu, Yagi, Kuniaki

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METHOD FOR PRODUCING POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE von YAGI, Kuniaki

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METHOD FOR PRODUCING POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE von YAGI, Kuniaki

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Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping von Umeno, Yoshitaka, Nagasawa, Hiroyuki, Yagi, Kuniaki

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Propagation of Stacking Faults in 3C-SiC von Nagasawa, Hiroyuki, Yagi, Kuniaki, Hatta, Naoki, Kawahara, Takamitsu

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