Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes von Lu, Liwu, Zhang, Yanhua, Xu, Zuntu, Xu, Zhongying, Wang, Zhanguo, Wang, J., Ge, Weikun

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High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers von Chen, Lianghui, Xu, Zuntu, Ma, Xiaoyu, Zhang, Jingming, Yang, Guowen, Xu, Junying

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Super-high power density, single mode 980nm pump lasers with weak temperature dependence von Wei Gao, Zuntu Xu, Nelson, A., Luo, K., Lisen Cheng, Mastrovito, A.

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Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes von Liwu Lu, Yanhua Zhang, Zuntu Xu, Zhongying Xu, Zhanguo Wang, Wang, J., Weikun Ge

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Study on intra-cavity contacted oxide-confined vertical cavity surface emitting laser von Guo Xia, Qu Hongwei, Da Xiaoli, Dong Limin, Deng Jun, Lian Peng, Xu Zuntu, Shen Guangdi

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High-brightness, high-efficiency 940-980nm InGaAs/AlGaAs/GaAs broad waveguide diode lasers von Xu, Zuntu, Gao, Wei, Cheng, Lisen, Nelson, Al, Luo, Kejian, Mastrovito, Andre, Yang, Tom

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Semiconductor light-emitting diode with N-pin structure von YING LIU, JIANJUN LI, JINYU DU, JUN DENG, DESHU ZOU, ZUNTU XU, XIA GUO, GUANGDI SHEN

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High performance InGaAs/InGaAsP strained quantum well lasers with AlGaAs cladding layers von Xu Zuntu, Yang Guowen, Ma Xiaoyu, Yin Tao, Lian Peng, Zhang Jingming, Xu Junying, Chen Lianghui, Shen Guangdi

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Study of the optical and electrical properties of InGaAs quantum well lasers with carbon doped cladding layer von Yin Tao, Gao Guo, Chen Changhua, Xu Zuntu, Lian Peng, Tao Changbao, Zhao Hongdong, Du Jinyu, Zou Desu, Chen Jianxin, Shen Guangdi

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No-alloy ohmic contact to heavily carbon-doped GaAs von Lian Peng, Lv Hui, Yin Yao, Chen changhua, Xu Zuntu, Zhang Hongqin, Liu Dejun, Ma Xiaoyu, Chen Lianghui, Shen Guangdi

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