Wet etching and passivation of GaSb-based very long wavelength infrared detectors von Xu, Xue-Yue, Jiang, Jun-Kai, Chen, Wei-Qiang, Cui, Su-Ning, Zhou, Wen-Guang, Li, Nong, Chang, Fa-Ran, Wang, Guo-Wei, Xu, Ying-Qiang, Jiang, Dong-Wei, Wu, Dong-Hai, Hao, Hong-Yue, Niu, Zhi-Chuan

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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers von Su, Xiang-Bin, Ding, Ying, Ma, Ben, Zhang, Ke-Lu, Chen, Ze-Sheng, Li, Jing-Lun, Cui, Xiao-Ran, Xu, Ying-Qiang, Ni, Hai-Qiao, Niu, Zhi-Chuan

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On the origin of carrier localization in AlInAsSb digital alloy von Zhou, Wen-Guang, Jiang, Dong-Wei, Shang, Xiang-Jun, Wu, Dong-Hai, Chang, Fa-Ran, Jiang, Jun-Kai, Li, Nong, Lin, Fang-Qi, Chen, Wei-Qiang, Hao, Hong-Yue, Liu, Xue-Lu, Tan, Ping-Heng, Wang, Guo-Wei, Xu, Ying-Qiang, Niu, Zhi-Chuan

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Analysis of Dynamic Characteristics of Grease-Lubricated Tapered Roller Bearings von Wu, Zheng-Hai, Deng, Si-Er, Xu, Ying-Qiang

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High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers von Su, Xiang-Bin, Shao, Fu-Hui, Hao, Hui-Ming, Qing, Liu-Han, Li, Shu-Lun, Dai, De-Yan, Shang, Xiang-Jun, Wang, Tian-Fang, Zhang, Yu, Yang, Cheng-Ao, Xu, Ying-Qiang, Ni, Hai-Qiao, Ding, Ying, Niu, Zhi-Chuan

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Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers von Li, Yong, Li, Xiao-Ming, Hao, Rui-Ting, Guo, Jie, Zhuang, Yu, Cui, Su-Ning, Wei, Guo-Shuai, Ma, Xiao-Le, Wang, Guo-Wei, Xu, Ying-Qiang, Niu, Zhi-Chuan, Wang, Yao

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Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 μm on 4-in. wafer von Qi, Tong-Tong, Guo, Jie, Hao, Rui-Ting, Liu, Yu, Chang, Fa-Ran, Jiang, Zhi, He, Xiao-Wu, Jiang, Dong-Wei, Wang, Guo-Wei, Xu, Ying-Qiang, Niu, Zhi-Chuan

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Investigation of high hole mobility In0.41Ga0.59Sb/Al0.91Ga0.09Sb quantum well structures grown by molecular beam epitaxy von Wang, Juan, Xing, Jun-Liang, Xiang, Wei, Wang, Guo-Wei, Xu, Ying-Qiang, Ren, Zheng-Wei, Niu, Zhi-Chuan

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Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density von XING, Jun-Liang, ZHANG, Yu, LIAO, Yong-Ping, WANG, Juan, XIANG, Wei, XU, Ying-Qiang, WANG, Guo-Wei, REN, Zheng-Wei, NIU, Zhi-Chuan

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Wet Chemical Etching of Antimonide-Based Infrared Materials von 郝宏玥 向伟 王国伟 徐应强 任正伟 韩玺 贺振宏 廖永平 魏思航 牛智川

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High-power, high-spectral-purity GaSb-based laterally coupled distributed feedback lasers with metal gratings emitting at 2 μm von Yang, Cheng-Ao, Xie, Sheng-Wen, Zhang, Yi, Shang, Jin-Ming, Huang, Shu-Shan, Yuan, Ye, Shao, Fu-Hui, Zhang, Yu, Xu, Ying-Qiang, Niu, Zhi-Chuan

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MBE growth of mid-wavelength infrared photodetectors based on high quality InAs/AlAs/InAsSb superlattice von Jiang, Jun-Kai, Li, Yong, Chang, Fa-Ran, Cui, Su-Ning, Chen, Wei-Qiang, Jiang, Dong-Wei, Wang, Guo-Wei, Xu, Ying-Qiang, Niu, Zhi-Chuan, Che, Ren-chao, Zhang, Chuan-jie, Huang, Li

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Dark current simulation and analysis for InAs/GaSb long wavelength infrared barrier detectors von Cui, Su-Ning, Chen, Wei-Qiang, Jiang, Dong-Wei, Wu, Dong-hai, Wang, Guo-Wei, Xu, Ying-Qiang, Niu, Zhi-Chuan

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High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy von Xing, Jun-Liang, Zhang, Yu, Xu, Ying-Qiang, Wang, Guo-Wei, Wang, Juan, Xiang, Wei, Ni, Hai-Qiao, Ren, Zheng-Wei, He, Zhen-Hong, Niu, Zhi-Chuan

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Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection von Guo-Wei, Wang, Ying-Qiang, Xu, Jie, Guo, Bao, Tang, Zheng-Wei, Ren, Zhen-Hong, He, Zhi-Chuan, Niu

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Pre-bulging effect during sheet hydroforming process of aluminum alloy box with unequal height and flat bottom von LANG, Li-hui, WANG, Yong-ming, XIE, Ya-su, YANG, Xi-ying, XU, Ying-qiang

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Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy von Lin, Fang-Qi, Li, Nong, Zhou, Wen-Guang, Jiang, Jun-Kai, Chang, Fa-Ran, Li, Yong, Cui, Su-Ning, Chen, Wei-Qiang, Jiang, Dong-Wei, Hao, Hong-Yue, Wang, Guo-Wei, Xu, Ying-Qiang, Niu, Zhi-Chuan

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High-Power Laterally Coupled Distributed Feedback Lasers With Metal Gratings Around 2~\mu m von Yang, Cheng-Ao, Xie, Sheng-Wen, Huang, Shu-Shan, Yuan, Ye, Zhang, Yi, Shang, Jin-Ming, Zhang, Yu, Xu, Ying-Qiang, Niu, Zhi-Chuan

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High-performance midwavelength infrared detectors based on InAsSb nBn design von Zhang, Xuan, Jia, Qing-Xuan, Sun, Ju, Jiang, Dong-Wei, Wang, Guo-Wei, Xu, Ying-Qiang, Niu, Zhi-Chuan

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An effective reflectance method for designing broadband antireflection films coupled with solar cells von Zhan, Feng, He, Ji-Fang, Shang, Xiang-Jun, Li, Mi-Feng, Ni, Hai-Qiao, Xu, Ying-Qiang, Niu, Zhi-Chuan

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