Efficient hierarchical mixed Pd/SnO2 porous architecture deposited microheater for low power ethanol gas sensor von Xiao, Li, Xu, Shengrui, Yu, Geng, Liu, Shantang

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β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2 von Yan, Qinglong, Gong, Hehe, Zhang, Jincheng, Ye, Jiandong, Zhou, Hong, Liu, Zhihong, Xu, Shengrui, Wang, Chenlu, Hu, Zhuangzhuang, Feng, Qian, Ning, Jing, Zhang, Chunfu, Ma, Peijun, Zhang, Rong, Hao, Yue

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Mechanism of low Ohmic contact resistance to p-type GaN by suppressed edge dislocations von Su, Huake, Zhang, Tao, Xu, Shengrui, Lu, Juan, Du, Hanghai, Tao, Hongchang, Zhang, Jincheng, Hao, Yue

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A High-Performance Gate Engineered InGaN Dopingless Tunnel FET von Duan, Xiaoling, Zhang, Jincheng, Wang, Shulong, Li, Yao, Xu, Shengrui, Hao, Yue

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High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage von Zhang, Yachao, Li, Yifan, Wang, Jia, Shen, Yiming, Du, Lin, Li, Yao, Wang, Zhizhe, Xu, Shengrui, Zhang, Jincheng, Hao, Yue

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Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures von Su, Huake, Zhang, Tao, Xu, Shengrui, Tao, Hongchang, Yun, Boxiang, Zhang, Jincheng, Hao, Yue

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Diamond Field Effect Transistors With MoO3 Gate Dielectric von Ren, Zeyang, Zhang, Jinfeng, Zhang, Jincheng, Zhang, Chunfu, Xu, Shengrui, Yao, Li, Yue Hao

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High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels von Zhang, Yachao, Wang, ZhiZhe, Guo, Rui, Liu, Ge, Xu, Shengrui, Bao, Weimin, Zhang, Jincheng, Hao, Yue

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An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing von Su, Huake, Zhang, Tao, Xu, Shengrui, Tao, Hongchang, Gao, Yuan, Liu, Xu, Xie, Lei, Xiang, Peng, Cheng, Kai, Hao, Yue, Zhang, Jincheng

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Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes von Yang, Lin'an, Li, Yue, Wang, Ying, Xu, Shengrui, Hao, Yue

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High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier von Zhang, Yachao, Guo, Rui, Xu, Shengrui, Zhang, Jincheng, Zhao, Shenglei, Wang, Haiyong, Hu, Qiang, Zhang, Chunfu, Hao, Yue

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Methyltrimethoxysilane modified tin dioxide microspheres with hydrophobic networks and abundant adsorbed oxygen for efficient solid-phase microextraction of polychlorinated bipheny... von Ji, Caixia, Wu, Hongwei, Long, Anying, Xiao, Li, Feng, Suling, Xu, Shengrui

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Proton-irradiation-induced degradation in GaN-based UV LEDs: Role of unintentionally doped carbon von Wang, Yingzhe, Zheng, Xuefeng, Zhu, Tian, Yue, Shaozhong, Pan, Ailing, Xu, Shengrui, Li, Peixian, Ma, Xiaohua, Zhang, Jincheng, Guo, Lixin, Hao, Yue

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Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r‑Plane Sapphire by Metal Organic Chemical Vapor Deposition von Xu, Shengrui, Hao, Yue, Zhang, Jincheng, Jiang, Teng, Yang, Linan, Lu, Xiaoli, Lin, Zhiyu

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Improving the production of high-performance solar-blind β-Ga2O3 photodetectors by controlling the growth pressure von Li, Zhe, An, Zhiyuan, Xu, Yu, Cheng, Yaolin, Cheng, Ya’nan, Chen, Dazheng, Feng, Qian, Xu, Shengrui, Zhang, Jincheng, Zhang, Chunfu, Hao, Yue

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Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection von Zhang, Tao, Li, Ruohan, Zhang, Yanni, Su, Huake, Zhang, Weihang, Duan, Xiaoling, Zhang, Jincheng, Xu, Shengrui, Lv, Yueguang, Hao, Yue

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Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering von Gao, Yuan, Xu, Shengrui, Zhang, Jincheng, Zhang, Jinfeng, Tao, Hongchang, Zhang, Yachao, Su, Huake, Yun, Boxiang, Hao, Yue

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Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV von Zhang, Tao, Zhang, Yanni, Li, Ruohan, Lu, Juan, Su, Huake, Xu, Shengrui, Su, Kai, Duan, Xiaoling, Lv, Yueguang, Zhang, Jincheng, Hao, Yue

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Demonstration of Al0.85Ga0.15N Schottky barrier diode with > 3 kV breakdown voltage and the reverse leakage currents formation mechanism analysis von Wang, Jieying, Zhou, Hong, Zhang, Jincheng, Liu, Zhihong, Xu, Shengrui, Feng, Qian, Ning, Jing, Zhang, Chunfu, Ma, Peijun, Zhang, Jinfeng, Hao, Yue

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Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity von Yao, Yixin, Zhang, Yachao, Zhu, Jiaduo, Dang, Kui, Su, Chunxu, Ma, Jinbang, Chen, Kai, Wang, Baiqi, Liu, Wenjun, Xu, Shengrui, Zhao, Shenglei, Zhang, Jincheng, Hao, Yue

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