A 300-V Ultra-Low-Specific On-Resistance High-Side p-LDMOS With Auto-Biased n-LDMOS for SPIC von Yi, Bo, Chen, Xingbi

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A Vertical Power MOSFET With an Interdigitated Drift Region Using High- k Insulator von Chen, Xingbi, Huang, Mingmin

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A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates von Lin, Zhi, Chen, Xingbi

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Vertical Power Hk-MOSFET of Hexagonal Layout von LYU, Xinjiang, XINGBI CHEN

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An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions von Lyu, Xinjiang, Chen, Xingbi

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Optimization of Specific On-Resistance of Balanced Symmetric Superjunction MOSFETs Based on a Better Approximation of Ionization Integral von Huang, Haimeng, Chen, Xingbi

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An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates von Zhu, Liheng, Chen, Xingbi

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A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS von Li, Ping, Lyu, Xinjiang, Cheng, Junji, Chen, Xingbi

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Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance von Huang, Haimeng, Chen, Xingbi

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Design of a Double-Gate Power LDMOS With Improved SOA by Complementary Majority Carrier Conduction Paths von Du, W, Chen, X

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New Planar Junction Edge Termination Technique Using OPTVLD With a Buried Layer von Cheng, Junji, Chen, Xingbi

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Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric von Li, Junhong, Li, Ping, Huo, Weirong, Zhang, Guojun, Zhai, Yahong, Chen, Xingbi

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A Practical Approach to Enhance Yield of OPTVLD Products von Cheng, Junji, Chen, Xingbi

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A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability von Yi, Bo, Kong, Moufu, Lin, Jia, Cheng, Junji, Huang, Haimeng, Chen, Xingbi

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A Novel Isolation Method for Half-Bridge Power ICs von Kong, Moufu, Chen, Xingbi

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Snapback-free reverse-conducting IGBT with low turnoff loss von Yi, Bo, Lin, Zhi, Chen, Xingbi

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A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate von Jiang, Qimeng, Wang, Minzhi, Chen, Xingbi

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An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate von Wenfang Du, Xinjiang Lyu, Wai Tung Ng, Xingbi Chen

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Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals von Kong, Moufu, Du, Wenfang, Chen, Xingbi

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Vertical Power k-MOSFET of Hexagonal Layout von Lyu, Xinjiang, Chen, Xingbi

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