Parallel in-memory wireless computing von Wang, Cong, Ruan, Gong-Jie, Yang, Zai-Zheng, Yangdong, Xing-Jian, Li, Yixiang, Wu, Liang, Ge, Yingmeng, Zhao, Yichen, Pan, Chen, Wei, Wei, Wang, Li-Bo, Cheng, Bin, Zhang, Zaichen, Zhang, Chuan, Liang, Shi-Jun, Miao, Feng

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Harnessing nonlinear conductive characteristic of TiO2/HfO2 memristor crossbar for implementing parallel vector–matrix multiplication von Wei, Wei, Wang, Cong, Pan, Chen, Yangdong, Xing-Jian, Yang, Zai-Zheng, Yang, Yuekun, Cheng, Bin, Liang, Shi-Jun, Miao, Feng

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Parallel in-memory wireless computing von Wang, Cong, Gong-Jie Ruan, Zai-Zheng, Yang, Xing-Jian Yangdong, Li, Yixiang, Wu, Liang, Ge, Yingmeng, Zhao, Yichen, Chen, Pan, Wei, Wei, Li-Bo, Wang, Cheng, Bin, Zhang, Zaichen, Zhang, Chuan, Shi-Jun, Liang, Miao, Feng

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High precision current mirror circuit based on two-dimensional material transistors von Gao, Shiping, Pan, Chen, Su, Pincheng, Yangdong, Xing-Jian, Yu, Wentao, Zeng, Zhoujie, Shen, Yu, Shi, Jingwen, Cui, Yanwei, Wang, Pengfei, Yang, Yuekun, Wang, Cong, Cheng, Bing, Liang, Shi-Jun, Miao, Feng

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Erratum to: High precision current mirror circuit based on two-dimensional material transistors von Gao, Shiping, Pan, Chen, Su, Pincheng, Yangdong, Xing-Jian, Yu, Wentao, Zeng, Zhoujie, Shen, Yu, Shi, Jingwen, Cui, Yanwei, Wang, Pengfei, Yang, Yuekun, Wang, Cong, Cheng, Bin, Liang, Shi-Jun, Miao, Feng

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