Acoustic and optical plasmons excitation in double-channel AlGaN/GaN HEMT under asymmetric boundaries von Guo, Hongyang, Yang, Shengpeng, Zhang, Ping, Xing, Runxian, Yu, Guohao, Wang, Shaomeng, Gong, Yubin

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Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies von Xing, Runxian, Guo, Hongyang, Yu, Guohao, Zhou, Jiaan, Yang, An, Dai, Shige, Zeng, Zhongming, Zhang, Xingping, Zhang, Baoshun

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Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate von Xing, Runxian, Zhang, Ping, Guo, Hongyang, Yu, Guohao, Zhou, Jiaan, Yang, An, Dai, Shige, Zeng, Zhongming, Zhang, Xingping, Zhang, Baoshun

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Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching von Li, Yu, Yu, Guohao, Wang, Heng, Zhou, Jiaan, Wang, Zheming, Xing, Runxian, Lu, Shaoqian, Yang, An, Zhang, Bingliang, Cai, Yong, Zeng, Zhongming, Zhang, Baoshun

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Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K von Yang, An, Wei, Xing, Shen, Wenchao, Hu, Yu, Chen, Tiwei, Wang, Heng, Zhou, Jiaan, Xing, Runxian, Zhang, Xiaodong, Yu, Guohao, Fan, Yaming, Cai, Yong, Zeng, Zhongming, Zhang, Baoshun

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High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated... von Guo, Bohan, Yu, Guohao, Zhang, Li, Zhou, Jiaan, Wang, Zheming, Xing, Runxian, Yang, An, Li, Yu, Liu, Bosen, Zeng, Xiaohong, Du, Zhongkai, Deng, Xuguang, Zeng, Zhongming, Zhang, Baoshun

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Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor von Zhou, Jiaan, Yang, An, Yu, Guohao, Xing, Runxian, Guo, Bohan, Hao, Chunfeng, Li, Yu, Liu, Bosen, Yue, Huixin, Jiang, Jinxia, Zhang, Li, Deng, Xuguang, Zeng, Zhongming, Zhang, Baoshun, Zhang, Xinping

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Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al 2 O 3 by Tetramethylammonium Hydroxide Wet Treatme... von Li, Yu, Zhou, Jiaan, Xing, Runxian, Lu, Shaoqian, Yang, An, Guo, Bohan, Liu, Bosen, Du, Zhongkai, Yu, Guohao, Zeng, Zhongming, Cai, Yong, Zhang, Baoshun

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Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment... von Li, Yu, Zhou, Jiaan, Xing, Runxian, Lu, Shaoqian, Yang, An, Guo, Bohan, Liu, Bosen, Du, Zhongkai, Yu, Guohao, Zeng, Zhongming, Cai, Yong, Zhang, Baoshun

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Influence of Asymmetric Spacer Layers on Resonant Tunneling Diodes von Li, Xubo, Rong, Weiming, Zhang, Ping, Wang, Shaomeng, Gong, Yubin, Xing, Runxian, Yu, Guohao

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Conveying device with extrusion damage prevention function for electronic part assembly von GAO RUNXIAN, LUO XING, HU BEI

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Machining equipment with grinding mechanism for special-shaped bearing von WU YIFAN, GAO RUNXIAN, LUO XING

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Bucket with novel wear-resistant plate structure von XU XIAODONG, QIN RUNXIAN, XU WENLONG, CUI FENG, XING XIAOJUN, ZHAO SHUFENG, REN SUJUN, CUI ZHANJUN, YAN CHANGLU, LIU ZHANQUAN, WANG RUNLI, HU YANYING, BAI HUAYI, LIU YUQIN, HUANG DAJIANG, LIU BAOZHU, XIN ZHIJUAN, WANG ZHENTAO

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