Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor von Li, Mingda (Oscar), Esseni, David, Snider, Gregory, Jena, Debdeep, Grace Xing, Huili

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High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes von Hwang, Wan Sik, Verma, Amit, Peelaers, Hartwin, Protasenko, Vladimir, Rouvimov, Sergei, (Grace) Xing, Huili, Seabaugh, Alan, Haensch, Wilfried, de Walle, Chris Van, Galazka, Zbigniew, Albrecht, Martin, Fornari, Roberto, Jena, Debdeep

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Unique prospects for graphene-based terahertz modulators von Sensale-Rodriguez, Berardi, Fang, Tian, Yan, Rusen, Kelly, Michelle M., Jena, Debdeep, Liu, Lei, (Grace) Xing, Huili

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234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes von Liu, Cheng, Ooi, Yu Kee, Islam, S. M., Xing, Huili (Grace), Jena, Debdeep, Zhang, Jing

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Extraordinary Control of Terahertz Beam Reflectance in Graphene Electro-absorption Modulators von Sensale-Rodriguez, Berardi, Yan, Rusen, Rafique, Subrina, Zhu, Mingda, Li, Wei, Liang, Xuelei, Gundlach, David, Protasenko, Vladimir, Kelly, Michelle M, Jena, Debdeep, Liu, Lei, Xing, Huili Grace

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1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon von Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Nomoto, Kazuki, Xiaodong Yan, Yu Cao, Johnson, Wayne, Kohn, Erhard, Jena, Debdeep, Xing, Huili Grace

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Dephasing by optical phonons in GaN defect single-photon emitters von Geng, Yifei, Luo, Jialun, van Deurzen, Len, Xing, Huili (Grace), Jena, Debdeep, Fuchs, Gregory David, Rana, Farhan

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GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy von Wei, Tongbo, Islam, S. M., Jahn, Uwe, Yan, Jianchang, Lee, Kevin, Bharadwaj, Shyam, Ji, Xiaoli, Wang, Junxi, Li, Jinmin, Protasenko, Vladimir, Xing, Huili (Grace), Jena, Debdeep

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Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures von Verma, Jai, Islam, S. M., Protasenko, Vladimir, Kumar Kandaswamy, Prem, (Grace) Xing, Huili, Jena, Debdeep

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Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes von Bharadwaj, Shyam, Miller, Jeffrey, Lee, Kevin, Lederman, Joshua, Siekacz, Marcin, Xing, Huili Grace, Jena, Debdeep, Skierbiszewski, Czesław, Turski, Henryk

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Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy von Gao, Bo, Hartland, Gregory, Fang, Tian, Kelly, Michelle, Jena, Debdeep, Xing, Huili (Grace), Huang, Libai

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Efficient terahertz electro-absorption modulation employing graphene plasmonic structures von Sensale-Rodriguez, Berardi, Yan, Rusen, Zhu, Mingda, Jena, Debdeep, Liu, Lei, Grace Xing, Huili

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Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy von Yan, Rusen, Zhang, Qin, Li, Wei, Calizo, Irene, Shen, Tian, Richter, Curt A., Hight-Walker, Angela R., Liang, Xuelei, Seabaugh, Alan, Jena, Debdeep, Grace Xing, Huili, Gundlach, David J., Nguyen, N. V.

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Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs von van Deurzen, Len, Gómez Ruiz, Mikel, Lee, Kevin, Turski, Henryk, Bharadwaj, Shyam, Page, Ryan, Protasenko, Vladimir, Xing, Huili (Grace), Lähnemann, Jonas, Jena, Debdeep

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Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes von Verma, Jai, Kandaswamy, Prem Kumar, Protasenko, Vladimir, Verma, Amit, Grace Xing, Huili, Jena, Debdeep

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Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN von Li, Guowang, Song, Bo, Ganguly, Satyaki, Zhu, Mingda, Wang, Ronghua, Yan, Xiaodong, Verma, Jai, Protasenko, Vladimir, Grace Xing, Huili, Jena, Debdeep

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Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures von Casamento, Joseph, Lee, Hyunjea, Chang, Celesta S., Besser, Matthew F., Maeda, Takuya, Muller, David A., Xing, Huili (Grace), Jena, Debdeep

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Polarization-Sensitive Nanowire Photodetectors Based on Solution-Synthesized CdSe Quantum-Wire Solids von Singh, Amol, Li, Xiangyang, Protasenko, Vladimir, Galantai, Gabor, Kuno, Masaru, Xing, Huili (Grace), Jena, Debdeep

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Intrinsic electron mobility limits in β-Ga2O3 von Ma, Nan, Tanen, Nicholas, Verma, Amit, Guo, Zhi, Luo, Tengfei, Xing, Huili (Grace), Jena, Debdeep

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Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors von Sik Hwang, Wan, Remskar, Maja, Yan, Rusen, Kosel, Tom, Kyung Park, Jong, Jin Cho, Byung, Haensch, Wilfried, (Grace) Xing, Huili, Seabaugh, Alan, Jena, Debdeep

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