P‑type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition von Li, Mengge, Yao, Jiadong, Wu, Xiaoxiang, Zhang, Shucheng, Xing, Boran, Niu, Xinyue, Yan, Xiaoyuan, Yu, Ying, Liu, Yali, Wang, Yewu

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Metal-assisted exfoliation of few-layer black phosphorus with high yield von Guan, Liao, Xing, Boran, Niu, Xinyue, Wang, Dan, Yu, Ying, Zhang, Shucheng, Yan, Xiaoyuan, Wang, Yewu, Sha, Jian

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Synthesis and electrical properties of single crystalline black phosphorus nanoribbons von Yu, Ying, Yao, Jiadong, Niu, Xinyue, Xing, Boran, Liu, Yali, Wu, Xiaoxiang, Li, Mengge, Yan, Xiaoyuan, Sha, Jian, Wang, Yewu

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Improvement in the quality of black phosphorus by selecting a mineralizer von Yu, Ying, Xing, Boran, Wang, Dan, Guan, Liao, Niu, Xinyue, Yao, Jiadong, Yan, Xiaoyuan, Zhang, Shucheng, Liu, Yali, Wu, Xiaoxiang, Sha, Jian, Wang, Yewu

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Influence of metal electrode on the performance of ZnO based resistance switching memories von Wang, Xueting, Qian, Haolei, Guan, Liao, Wang, Wei, Xing, Boran, Yan, Xiaoyuan, Zhang, Shucheng, Sha, Jian, Wang, Yewu

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Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device von Yao, Jiadong, Liu, Yali, Guo, Wenxuan, Niu, Xinyue, Li, Mengge, Wu, Xiaoxiang, Yu, Ying, Yan, Xiaoyuan, Xing, Boran, Zhang, Shucheng, Sha, Jian, Wang, Yewu

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Surface charge transfer doping and effective passivation of black phosphorus field effect transistors von Xing, Boran, Yu, Ying, Yao, Jiadong, Niu, Xinyue, Yan, Xiaoyuan, Liu, Yali, Wu, Xiaoxiang, Li, Mengge, Guo, Wenxuan, Sha, Jian, Wang, Yewu

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Resistive memory based on single-crystalline black phosphorus flake/HfOx structure von Yan, Xiaoyuan, Wang, Xueting, Xing, Boran, Yu, Ying, Yao, Jiadong, Niu, Xinyue, Li, Mengge, Sha, Jian, Wang, Yewu

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Design and build MoS2/Au/MoS2 sandwich structure to significantly enhance the photoluminescence von Zhang, Shucheng, Guan, Liao, Niu, Xinyue, Yao, Jiadong, Yan, Xiaoyuan, Xing, Boran, Yu, Ying, Sha, Jian, Wang, Yewu

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Air stable and reversible n-type surface functionalization of MoS2 monolayer using Arg and Lys amino acids von Li, Mengge, Yao, Jiadong, Liu, Yali, Wu, Xiaoxiang, Yu, Ying, Xing, Boran, Yan, Xiaoyuan, Guo, Wenxuan, Tan, Mingqiu, Sha, Jian, Wang, Yewu

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Self-powered and high responsivity photodetector based on a n-Si/p-GaTe heterojunction von Liu, Yali, Wu, Xiaoxiang, Guo, Wenxuan, Li, Mengge, Niu, Xinyue, Yao, Jiadong, Yu, Ying, Xing, Boran, Yan, Xiaoyuan, Zhang, Shucheng, Sha, Jian, Wang, Yewu

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HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio von Xing, Boran, Guan, Liao, Yu, Ying, Niu, Xinyue, Yan, Xiaoyuan, Zhang, Shucheng, Yao, Jiadong, Wang, Dan, Sha, Jian, Wang, Yewu

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Photoluminescence enhancement by stacking bi-layer MoS2 without interlayer coupling von Zhang, Shucheng, Wang, Wei, Guan, Liao, Niu, Xinyue, Yao, Jiadong, Yan, Xiaoyuan, Xing, Boran, Yu, Ying, Sha, Jian, Wang, Yewu

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N-type doping of black phosphorus single crystal by tellurium von Yu, Ying, Xing, Boran, Yao, Jiadong, Niu, Xinyue, Liu, Yali, Wu, Xiaoxiang, Yan, Xiaoyuan, Li, Mengge, Sha, Jian, Wang, Yewu

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Single crystal growth of bulk SnS2 and high yield preparation of few-layer SnS2 von Wang, Dan, Guan, Liao, Yao, Jiadong, Yan, Xiaoyuan, Niu, Xinyue, Yu, Ying, Xing, Boran, Zhang, Shucheng, Wang, Yewu

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Design of a two-layer structure to significantly improve the performance of zinc oxide resistive memory von Yan, Xiaoyuan, Wang, Xueting, Wang, Dan, Li, Mengge, Guan, Liao, Yao, Jiadong, Niu, Xinyue, Xing, Boran, Yu, Ying, Tan, Mingqiu, Sha, Jian, Wang, Yewu

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P-type Doping in Large-Area Monolayer MoS 2 by Chemical Vapor Deposition von Li, Mengge, Yao, Jiadong, Wu, Xiaoxiang, Zhang, Shucheng, Xing, Boran, Niu, Xinyue, Yan, Xiaoyuan, Yu, Ying, Liu, Yali, Wang, Yewu

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HfO 2 -passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio von Xing, Boran, Guan, Liao, Yu, Ying, Niu, Xinyue, Yan, Xiaoyuan, Zhang, Shucheng, Yao, Jiadong, Wang, Dan, Sha, Jian, Wang, Yewu

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Metal-assisted exfoliation of few-layer black phosphorus with high yieldElectronic supplementary information (ESI) available. See DOI: 10.1039/c7cc08488a von Guan, Liao, Xing, Boran, Niu, Xinyue, Wang, Dan, Yu, Ying, Zhang, Shucheng, Yan, Xiaoyuan, Wang, Yewu, Sha, Jian

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Resistive memory based on single-crystalline black phosphorus flake/HfO(x)structure von Yan, Xiaoyuan, Wang, Xueting, Xing, Boran, Yu, Ying, Yao, Jiadong, Niu, Xinyue, Li, Mengge, Sha, Jian, Wang, Yewu

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