BaRuO3 thin films prepared by pulsed laser deposition von W-PING XU, LIRONG ZHENG, HUOPING XIN, CHENGLU LIN, MEI GU, ZECHUN CAO, OKUYAMA, M

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Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen von Welty, Rebecca J., Xin, Huoping, Tu, Charles W., Asbeck, Peter M.

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Experimental studies of N~+ implantation into CVD diamond thin films von 辛火平 林成鲁 王建新 邹世昌 石晓红 林梓鑫 周祖尧 刘祖刚

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Formation of covalent solid CN x compounds by high dose nitrogen implantation into carbon thin films von Xin, Huoping, Xu, W-ping, Shi, Xiaohong, Zhu, Hong, Lin, Chenglu, Zou, Shichang

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Phase evolution in boron nitride thin films prepared by a dc-gasdischarge assisted pulsed laser deposition von Xin, Huoping, Shi, Xiaohong, Lin, Chenglu, Xu, W-ping, Zheng, Lirong, Zou, Shichang

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Growth of cubit boron nitride thin films by a field-ionization source-assisted pulsed laser deposition von HUOPING XIN, YIQING CHEN, XIAOHONG SHI, HUAPING XU, CHENGLU LIN, SHICHANG ZOU

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Formation of buried carbon nitride by high dose nitrogen implantation into carbon thin film von Xin, Huoping, Lin, Chenglu, Zhu, Shiyang, Zou, Shichang, Shi, Xiaohong, Zhu, Hong, Hemment, P.L.F.

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BaRuO 3 thin films prepared by pulsed laser deposition von Xu, W-ping, Zheng, Lirong, Xin, Huoping, Lin, Chenglu, Gu, Mei, Cao, Zechun, Okuyama, Masanori

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Pulsed laser deposition of PZT/BaRuO 3 BI-Layered films on silicon substrate von Xu, W-Ping, Gu, Mei, Zheng, Lirong, Xin, Huoping, Cao, Zechun, Okuyama, Masanori, Lin, Chenglu

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Growth of cubic boron nitride thin films by a field-ionization source-assisted pulsed laser deposition von Xin, Huoping, Chen, Yiqing, Shi, Xiaohong, Xu, Huaping, Lin, Chenglu, Zou, Shichang

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In-situ preparation of polycrystalline BaTiO sub(3) thin films on silicon by hydrothermal method von Xu, W-Ping, Zheng, Lirong, Xin, Huoping, Lin, Chenglu, Jiang, Fuming, Yin, Qingrui, Okuyama, Masanori

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Pulsed laser deposition of PZT/BaRuO sub(3) bi-layered films on silicon substrate von Xu, W-Ping, Gu, Mei, Zheng, Lirong, Xin, Huoping, Cao, Zechun, Okuyama, Masanori, Lin, Chenglu

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III-NITRIDE ELECTRONIC DEVICE STRUCTURE WITH HIGH-A1 A1GaN DIFFUSION BARRIER von XIN, HUOPING, BRANDES, GEORGE, FLYNN, JEFFREY, S

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III-NITRIDE ELECTRONIC DEVICE STRUCTURE WITH HIGH-A1 A1GaN DIFFUSION BARRIER von XIN, HUOPING, BRANDES, GEORGE, FLYNN, JEFFREY, S

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III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier von XIN HUOPING, BRANDES GEORGE R, FLYNN JEFFREY S

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III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier von Flynn, Jeffrey S, Xin, Huoping, Brandes, George R

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III-nitride optoelectronic device structure with high al AlGaN diffusion barrier von XIN, HUOPING, BRANDES, GEORGE R, FLYNN, JEFFERY S

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III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier von XIN HUOPING, BRANDES GEORGE R, FLYNN JEFFREY S

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High efficiency light emitting device von LIU XINGQUAN, SONG JIN S, XIN HUOPING, CHOI CHAN K, SHI XIAOHONG

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