Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities von Zhang, Shengli, Xie, Meiqiu, Li, Fengyu, Yan, Zhong, Li, Yafei, Kan, Erjun, Liu, Wei, Chen, Zhongfang, Zeng, Haibo

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GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass von Hu, Yonghong, Zhang, Shengli, Sun, Shaofa, Xie, Meiqiu, Cai, Bo, Zeng, Haibo

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Ammonium iodide-incorporated SnO2 obtains perovskite solar cells with over 24% efficiency von Li, Hui, Xu, Jianyu, Han, Junhui, Lan, Qimin, Wu, Zhe, Xie, Meiqiu, Shao, Cong, Li, Xing'ao, Wang, Jizheng

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Solar Selective Absorbers for High-efficiency Photothermal Conversion via Core–Shell Nanocone Structured Surface von Da, Yun, Xie, Meiqiu

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Characteristics of hypertension in the last 16 years in high prevalence region of China and the attribute ratios for cardiovascular mortality von Zheng, Wenlong, Wang, Xiaohe, Xue, Xiaodan, Li, Wei, Fan, Lili, Zhang, Shuang, Li, Changkun, Wang, Zhuo, Xie, Meiqiu, Xin, Peng, Jiang, Guohong

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Device physics of homojunction perovskite solar cells: a design omitting all the charge transport layers with efficiency exceeding 26.3 von Da, Yun, Xie, Meiqiu

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CuO/ZnO memristors via oxygen or metal migration controlled by electrodes von Huang, Yong, Shen, Zihan, Wu, Ye, Xie, Meiqiu, Hu, Yanqiang, Zhang, Shufang, Shi, Xiaoqin, Zeng, Haibo

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Enhanced water splitting photocatalyst enabled by two-dimensional GaP/GaAs van der Waals heterostructure von Xie, Meiqiu, Li, Yang, Liu, Xuhai, Li, Xing'ao

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Two-dimensional BX (X = P, As, Sb) semiconductors with mobilities approaching graphene von Xie, Meiqiu, Zhang, Shengli, Cai, Bo, Zhu, Zhen, Zou, Yousheng, Zeng, Haibo

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Two-dimensional InSb/GaAs- and InSb/InP-based tandem photovoltaic device with matched bandgap von Xie, Meiqiu, Liu, Xuhai, Li, Yang, Li, Xing'ao

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Van der Waals bilayer antimonene: A promising thermophotovoltaic cell material with 31% energy conversion efficiency von Xie, Meiqiu, Zhang, Shengli, Cai, Bo, Gu, Yu, Liu, Xuhai, Kan, Erjun, Zeng, Haibo

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Two-dimensional GeS with tunable electronic properties via external electric field and strain von Zhang, Shengli, Wang, Ning, Liu, Shangguo, Huang, Shiping, Zhou, Wenhan, Cai, Bo, Xie, Meiqiu, Yang, Qun, Chen, Xianping, Zeng, Haibo

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N- and p-type doping of antimonene von Xie, Meiqiu, Zhang, Shengli, Cai, Bo, Zou, Yousheng, Zeng, Haibo

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Two-Dimensional BAs/InTe: A Promising Tandem Solar Cell with High Power Conversion Efficiency von Xie, Meiqiu, Cai, Bo, Meng, Zhaoshun, Gu, Yu, Zhang, Shengli, Liu, Xuhai, gong, Longyan, Li, Xing’ao, Zeng, Haibo

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Two-dimensional IV-VA monolayers with enhanced charge mobility for high-performance solar cells von Xie, Meiqiu, Li, Yang, Liu, Xuhai, Yang, Jianping, Li, Hui, Li, Xing'ao

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Two-dimensional IV–VA 3 monolayers with enhanced charge mobility for high-performance solar cells von Xie, Meiqiu, Li, Yang, Liu, Xuhai, Yang, Jianping, Li, Hui, Li, Xing’ao

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Two-dimensional IV–VA3 monolayers with enhanced charge mobility for high-performance solar cells von Xie, Meiqiu, Yang, Li, Liu, Xuhai, Yang, Jianping, Li, Hui, Xing’ao Li

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Two-dimensional SiP: an unexplored direct band-gap semiconductor von Zhang, Shengli, Guo, Shiying, Huang, Yaxin, Zhu, Zhen, Cai, Bo, Xie, Meiqiu, Zhou, Wenhan, Zeng, Haibo

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Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities von Zhang, Shengli, Xie, Meiqiu, Li, Fengyu, Yan, Zhong, Li, Yafei, Kan, Erjun, Liu, Wei, Chen, Zhongfang, Zeng, Haibo

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Two-dimensional aluminum phosphide semiconductor with tunable direct band gap for nanoelectric applications von Yang, Xuxin, Mao, Caixia, Hu, Yonghong, Cao, Hui, Zhang, Yuping, Zhao, Dong, Chen, Zhiyuan, Xie, Meiqiu

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