High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination von Wang, Jingshan, Cao, Lina, Xie, Jinqiao, Beam, Edward, McCarthy, Robert, Youtsey, Chris, Fay, Patrick

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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates von Bryan, Zachary, Bryan, Isaac, Xie, Jinqiao, Mita, Seiji, Sitar, Zlatko, Collazo, Ramón

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Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN von Xiao, Ming, Yan, Xiaodong, Xie, Jinqiao, Beam, Edward, Cao, Yu, Wang, Han, Zhang, Yuhao

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Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes von Zhu, Zhongtao, Cao, Lina, Jönsson, Adam, Xu, Pengcheng, Xie, Jinqiao, Fay, Patrick

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Activation of buried p-GaN in MOCVD-regrown vertical structures von Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, Xing, Huili Grace

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Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN von Xiao, Ming, Du, Zhonghao, Xie, Jinqiao, Beam, Edward, Yan, Xiaodong, Cheng, Kai, Wang, Han, Cao, Yu, Zhang, Yuhao

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Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates von Guo, Wei, Bryan, Zachary, Xie, Jinqiao, Kirste, Ronny, Mita, Seiji, Bryan, Isaac, Hussey, Lindsay, Bobea, Milena, Haidet, Brian, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

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Thin-film GaN Schottky diodes formed by epitaxial lift-off von Wang, Jingshan, Youtsey, Chris, McCarthy, Robert, Reddy, Rekha, Allen, Noah, Guido, Louis, Xie, Jinqiao, Beam, Edward, Fay, Patrick

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN von Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Kirste, Ronny, Sitar, Zlatko, Collazo, Ramón, Irving, Douglas L.

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On the origin of the 265 nm absorption band in AlN bulk crystals von Collazo, Ramón, Xie, Jinqiao, Gaddy, Benjamin E., Bryan, Zachary, Kirste, Ronny, Hoffmann, Marc, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Irving, Douglas L., Sitar, Zlatko

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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures von Xie, Jinqiao, Mita, Seiji, Bryan, Zachary, Guo, Wei, Hussey, Lindsay, Moody, Baxter, Schlesser, Raoul, Kirste, Ronny, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

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Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE von Ciarkowski, Timothy, Allen, Noah, Carlson, Eric, McCarthy, Robert, Youtsey, Chris, Wang, Jingshan, Fay, Patrick, Xie, Jinqiao, Guido, Louis

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Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications von Collazo, Ramón, Mita, Seiji, Xie, Jinqiao, Rice, Anthony, Tweedie, James, Dalmau, Rafael, Sitar, Zlatko

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN von Gaddy, Benjamin E., Bryan, Zachary, Bryan, Isaac, Kirste, Ronny, Xie, Jinqiao, Dalmau, Rafael, Moody, Baxter, Kumagai, Yoshinao, Nagashima, Toru, Kubota, Yuki, Kinoshita, Toru, Koukitu, Akinori, Sitar, Zlatko, Collazo, Ramón, Irving, Douglas L.

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Polarity control and growth of lateral polarity structures in AlN von Kirste, Ronny, Mita, Seiji, Hussey, Lindsay, Hoffmann, Marc P., Guo, Wei, Bryan, Isaac, Bryan, Zachary, Tweedie, James, Xie, Jinqiao, Gerhold, Michael, Collazo, Ramón, Sitar, Zlatko

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High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors von Xie, Jinqiao, Ni, Xianfeng, Wu, Mo, Leach, Jacob H., Özgür, Ümit, Morkoç, Hadis

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Strain in Si doped GaN and the Fermi level effect von Xie, Jinqiao, Mita, Seiji, Rice, Anthony, Tweedie, James, Hussey, Lindsay, Collazo, Ramón, Sitar, Zlatko

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Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms von Li, Wenshen, Nomoto, Kazuki, Sundar, Aditya, Lee, Kevin, Zhu, Mingda, Hu, Zongyang, Beam, Edward, Xie, Jinqiao, Pilla, Manyam, Gao, Xiang, Rouvimov, Sergei, Jena, Debdeep, Xing, Huili Grace

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Characterization of dislocation arrays in AlN single crystals grown by PVT von Dalmau, Rafael, Moody, Baxter, Xie, Jinqiao, Collazo, Ramón, Sitar, Zlatko

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Fermi Level Control of Point Defects During Growth of Mg-Doped GaN von Bryan, Zachary, Hoffmann, Marc, Tweedie, James, Kirste, Ronny, Callsen, Gordon, Bryan, Isaac, Rice, Anthony, Bobea, Milena, Mita, Seiji, Xie, Jinqiao, Sitar, Zlatko, Collazo, Ramón

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