Review of status developments of high-efficiency crystalline silicon solar cells von Liu, Jingjing, Yao, Yao, Xiao, Shaoqing, Gu, Xiaofeng

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Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy von Zhang, Xiumei, Nan, Haiyan, Xiao, Shaoqing, Wan, Xi, Gu, Xiaofeng, Du, Aijun, Ni, Zhenhua, Ostrikov, Kostya (Ken)

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2D atomic crystal molecular superlattices by soft plasma intercalation von Zhang, Lufang, Nan, Haiyan, Zhang, Xiumei, Liang, Qifeng, Du, Aijun, Ni, Zhenhua, Gu, Xiaofeng, Ostrikov, Kostya (Ken), Xiao, Shaoqing

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Recent advances in plasma modification of 2D transition metal dichalcogenides von Nan, Haiyan, Zhou, Renwu, Gu, Xiaofeng, Xiao, Shaoqing, (Ken) Ostrikov, Kostya

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Synthesis and Characterization of Metallic Janus MoSH Monolayer von Wan, Xi, Chen, EnZi, Yao, Jie, Gao, Mingliang, Miao, Xin, Wang, Shuai, Gu, Yanyun, Xiao, Shaoqing, Zhan, Runze, Chen, Kun, Chen, Zefeng, Zeng, Xiaoliang, Gu, Xiaofeng, Xu, Jianbin

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Shape-Uniform, High-Quality Monolayered MoS2 Crystals for Gate-Tunable Photoluminescence von Zhang, Xiumei, Nan, Haiyan, Xiao, Shaoqing, Wan, Xi, Ni, Zhenhua, Gu, Xiaofeng, Ostrikov, Kostya

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Improving photodetection response time of ReS2 devices through double-sided oxidation von Zhou, Leyun, Qi, Renxian, Wang, Chenglin, Guo, Xitao, Lin, Liangliang, Cai, Zhengyang, Xiao, Shaoqing, Gu, Xiaofeng, Nan, Haiyan

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Atomic-layer soft plasma etching of MoS2 von Xiao, Shaoqing, Xiao, Peng, Zhang, Xuecheng, Yan, Dawei, Gu, Xiaofeng, Qin, Fang, Ni, Zhenhua, Han, Zhao Jun, Ostrikov, Kostya (Ken)

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Producing air-stable InSe nanosheet through mild oxygen plasma treatment von Nan, Haiyan, Guo, Sijia, Cai, Shuang, Chen, Zhirong, Zafar, Amina, Zhang, Xiumei, Gu, Xiaofeng, Xiao, Shaoqing, Ni, Zhenhua

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Large-size Mo1-xWxS2 and W1-xMoxS2 (x = 0–0.5) monolayers by confined-space chemical vapor deposition von Zhang, Xiumei, Xiao, Shaoqing, Shi, Lihong, Nan, Haiyan, Wan, Xi, Gu, Xiaofeng, Ni, Zhenhua, Ostrikov, Kostya (Ken)

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A Comprehensive Study of Reverse Current Degradation Mechanisms in Au/Ni/n-GaN Schottky Diodes von Ren, Jian, Mou, Wenjie, Zhao, Linna, Yan, Dawei, Yu, Zhiguo, Yang, Guofeng, Xiao, Shaoqing, Gu, Xiaofeng

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Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs von Yan, Dawei, Ren, Jian, Yang, Guofeng, Xiao, Shaoqing, Gu, Xiaofeng, Lu, Hai

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Low‐Temperature Synthesis of Graphene by ICP‐Assisted Amorphous Carbon Sputtering von Ye, Xing, Zhou, Haiping, Levchenko, Igor, Bazaka, Kateryna, Xu, Shuyan, Xiao, Shaoqing

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Hyperplane distance neighbor clustering based on local discriminant analysis for complex chemical processes monitoring von Lu, Chunhong, Xiao, Shaoqing, Gu, Xiaofeng

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Large-scale MoS2(1−x)Se2x monolayers synthesized by confined-space CVD von Zhang, Jinming, Qian, Yezheng, Nan, Haiyan, Gu, Xiaofeng, Xiao, Shaoqing

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Layer-by-layer thinning of MoSe2 by soft and reactive plasma etching von Sha, Yunfei, Xiao, Shaoqing, Zhang, Xiumei, Qin, Fang, Gu, Xiaofeng

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Large-scale MoS 2(1−x) Se 2x monolayers synthesized by confined-space CVD von Zhang, Jinming, Qian, Yezheng, Nan, Haiyan, Gu, Xiaofeng, Xiao, Shaoqing

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Synthesis and luminescence characteristics of ZnO nanotubes von 王福学 蔡小龙 闫大为 朱兆旻 肖少庆 顾晓峰

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Controllable Epitaxial Growth of Large‐Area MoS2/WS2 Vertical Heterostructures by Confined‐Space Chemical Vapor Deposition von Zhang, Xiumei, Huangfu, Luyao, Gu, Zhengjian, Xiao, Shaoqing, Zhou, Jiadong, Nan, Haiyan, Gu, Xiaofeng, Ostrikov, Kostya (Ken)

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In Situ Ultrafast and Patterned Growth of Transition Metal Dichalcogenides from Inkjet‐Printed Aqueous Precursors von Wan, Xi, Miao, Xin, Yao, Jie, Wang, Shuai, Shao, Feng, Xiao, Shaoqing, Zhan, Runze, Chen, Kun, Zeng, Xiaoliang, Gu, Xiaofeng, Xu, Jianbin

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