Fabrication and Characterization of Microstructured Magnetic Tunnel Junction Rings von Chen, C.C., Chang, C.C., Kuo, C.Y., Horng, L., Wu, J.C., Teho Wu, Chern, G., Huang, C.Y., Tsunoda, M., Takahashi, M.

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Controllable Remanent States on Microstructured Magnetic Tunnel Junction Rings von Chen, C. C., Chao, C. T., Kuo, C. Y., Horng, Lance, Wu, Teho, Chern, G., Huang, C. Y., Isogami, S., Tsunoda, M., Takahashi, M., Wu, J. C.

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Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions von Kuo, K.M., Lin, C.Y., Lin, C.T., Chern, G., Chao, C.T., Horng, Lance, Wu, J.C., Wu, Teho, Huang, C.Y., Ohyama, H., Isogami, S., Tsunoda, M., Takahashi, M.

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Effect of low-frequency AC magnetic susceptibility of Ru/Co^sub 60^Fe^sub 20^V^sub 20^ and Ta/Co^sub 60^Fe^sub 20^V^sub 20^ films von Chen, Yuan­Tsung, Chang, Yung­Huang, Liu, Wen­Jen, Liang, Wei­Chiao, Hsieh, Chin­Heng, Wu, Te­Ho

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Angular Dependence of Magnetoresistance During Magnetization Reversal on Magnetic Tunnel Junction Ring von Chen, C.C., Chang, C.C., Chang, Y.C., Chao, C.T., Kuo, C.Y., Horng, L., Wu, J.C., Teho Wu, Chern, G., Huang, C.Y., Tsunoda, M., Takahashi, M.

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The switching characteristics of free layer of patterned magnetic tunnel junction device von Chen, C.C., Wang, Y.R., Kuo, C.Y., Wu, J.C., Horng, Lance, Wu, Teho, Yoshimura, S., Tsunoda, M., Takahashi, M.

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Size dependence of magnetization reversal of ring shaped magnetic tunnel junction von Chen, C.C., Kuo, C.Y., Chang, Y.C., Chang, C.C., Horng, Lance, Wu, Teho, Chern, G., Huang, C.Y., Tsunoda, M., Takahashi, M., Wu, J.C.

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Magnetic and magneto-optical properties and domain structure of Co/Pd multilayers von Gadetsky, S., Wu, Teho, Suzuki, T., Mansuripur, M.

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Preparing method for molten salts electrolyte applied to produce magnetic thin film von YANG, CHAOCHEN, WU, TEHO, SHU, MINFONG

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Magnetic-stack structure and manufacturing method thereof von WU, TEHO, LEE, CHINGMING, YE, LINHSIU

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Method for measuring hysteresis curve and anisotropic energy of magnetic memory units von WU, TEHO, WENG, MINGI, YE, LIN-HSIU, LEE, JIA-MOU

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Method of measuring sub-micrometer hysteresis loops of magnetic films von WU, TEHO, YE, LIN-HSIU, LEE, JIA-MOU

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Magnetic random access memory von WU, TEHO, ALBERTO CANIZO CABRERA, YE, LINHSIU

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System for reducing critical current of magnetic random access memory von WU, TEHO, ALBERTO CANIZO CABRERA, YE, LINHSIU

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Composing structure of magnetic tunneling junction for magnetic random access memory von WU, TEHO, YE, LINHSIU, CHANG, CHEHAO, CHEN, TZUJUNG

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