Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices von Kim, Wonjoo, Menzel, Stephan, Wouters, Dirk J, Guo, Yuzheng, Robertson, John, Roesgen, Bernd, Waser, Rainer, Rana, Vikas

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Coherent noise enables probabilistic sequence replay in spiking neuronal networks von Bouhadjar, Younes, Wouters, Dirk J, Diesmann, Markus, Tetzlaff, Tom

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Sequence learning, prediction, and replay in networks of spiking neurons von Bouhadjar, Younes, Wouters, Dirk J., Diesmann, Markus, Tetzlaff, Tom

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On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices von Kindsmüller, Andreas, Meledin, Alexander, Mayer, Joachim, Waser, Rainer, Wouters, Dirk J

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Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices von Zhang, Hehe, Yoo, Sijung, Menzel, Stephan, Funck, Carsten, Cüppers, Felix, Wouters, Dirk J, Hwang, Cheol Seong, Waser, Rainer, Hoffmann-Eifert, Susanne

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Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design von Hennen, Tyler, Brackmann, Leon, Ziegler, Tobias, Siegel, Sebastian, Menzel, Stephan, Waser, Rainer, Wouters, Dirk J., Bedau, Daniel

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Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V2O3 von Mohr, Johannes, Bengel, Christopher, Hennen, Tyler, Bedau, Daniel, Menzel, Stephan, Waser, Rainer, Wouters, Dirk J.

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Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM von YANG YIN CHEN, GOUX, Ludovic, CLIMA, Sergiu, GOVOREANU, Bogdan, DEGRAEVE, Robin, SANKAR KAR, Gouri, FANTINI, Andrea, GROESENEKEN, Guido, WOUTERS, Dirk J, JURCZAK, Malgorzata

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Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films von Rupp, Jonathan A. J., Querré, Madec, Kindsmüller, Andreas, Besland, Marie-Paule, Janod, Etienne, Dittmann, Regina, Waser, Rainer, Wouters, Dirk J.

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A high throughput generative vector autoregression model for stochastic synapses von Hennen, Tyler, Elias, Alexander, Nodin, Jean-François, Molas, Gabriel, Waser, Rainer, Wouters, Dirk J., Bedau, Daniel

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Improvement of SET variability in TaO x based resistive RAM devices von Schönhals, Alexander, Waser, Rainer, Wouters, Dirk J

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Phase-change memories von Lacaita, Andrea L., Wouters, Dirk J.

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Electronic vs phononic thermal transport in Cr-doped V2O3 thin films across the Mott transition von Mohr, Johannes, Aryana, Kiumars, Islam, Md. Rafiqul, Wouters, Dirk J., Waser, Rainer, Hopkins, Patrick E., Nag, Joyeeta, Bedau, Daniel

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Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM von YANG YIN CHEN, GOVOREANU, Bogdan, ALTIMIME, Laith, GOUX, Ludovic, DEGRAEVE, Robin, FANTINI, Andrea, SANKAR KAR, Gouri, WOUTERS, Dirk J, GROESENEKEN, Guido, KITTL, Jorge A, JURCZAK, Malgorzata

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One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector von Leqi Zhang, Cosemans, Stefan, Wouters, Dirk J., Groeseneken, Guido, Jurczak, Malgorzata, Govoreanu, Bogdan

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Improvement of SET variability in TaOx based resistive RAM devices von Schönhals, Alexander, Waser, Rainer, Wouters, Dirk J

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Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films von Rosário, Carlos M. M., Thöner, Bo, Schönhals, Alexander, Menzel, Stephan, Wuttig, Matthias, Waser, Rainer, Sobolev, Nikolai A., Wouters, Dirk J.

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Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers von Rupp, Jonathan A. J., Corraze, Benoît, Besland, Marie-Paule, Cario, Laurent, Tranchant, Julien, Wouters, Dirk J., Waser, Rainer, Janod, Etienne

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On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides von Wouters, Dirk J, Menzel, Stephan, Rupp, Jonathan A. J, Hennen, Tyler, Waser, Rainer

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Current Compliance-Dependent Nonlinearity in TiO2 ReRAM von LENTZ, Florian, ROESGEN, Bernd, RANA, Vikas, WOUTERS, Dirk J, WASER, Rainer

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