Materials for spin-transfer-torque magnetoresistive random-access memory von Yuasa, Shinji, Hono, Kazuhiro, Hu, Guohan, Worledge, Daniel C.

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A new spin on magnetic memories von Kent, Andrew D., Worledge, Daniel C.

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Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages von Kanai, Shun, Gajek, Martin, Worledge, D. C., Matsukura, Fumihiro, Ohno, Hideo

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Electric-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2/oxide stacks using reduced voltage von Kita, Koji, Abraham, David W., Gajek, Martin J., Worledge, D. C.

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Spin flop switching for magnetic random access memory von Worledge, D. C.

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Development of perpendicularly magnetized Ta|CoFeB|MgO-based tunnel junctions at IBM (invited) von Worledge, D. C., Hu, G., Abraham, David W., Trouilloud, P. L., Brown, S.

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Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling von Worledge, D. C., Trouilloud, P. L.

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A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology von Min, Tai, Tang, Denny, Wang, Pokang, Chen, Mao-min, Sun, J. Z., Debrosse, J. K., Worledge, D. C., Maffitt, T. M., Gallagher, W. J., Chen, Qiang, Beach, Robert, Jan, Guenole, Horng, Cheng, Kula, Witold, Torng, Terry, Tong, Ruth, Zhong, Tom

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Spin torque switching of perpendicular Ta ∣ CoFeB ∣ MgO -based magnetic tunnel junctions von Worledge, D. C., Hu, G., Abraham, David W., Sun, J. Z., Trouilloud, P. L., Nowak, J., Brown, S., Gaidis, M. C., O'Sullivan, E. J., Robertazzi, R. P.

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Magnetic phase diagram of two identical coupled nanomagnets von Worledge, D. C.

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Effect of subvolume excitation and spin-torque efficiency on magnetic switching von Sun, J. Z., Robertazzi, R. P., Nowak, J., Trouilloud, P. L., Hu, G., Abraham, D. W., Gaidis, M. C., Brown, S. L., O’Sullivan, E. J., Gallagher, W. J., Worledge, D. C.

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Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions von Sun, J. Z., Brown, S. L., Chen, W., Delenia, E. A., Gaidis, M. C., Harms, J., Hu, G., Jiang, Xin, Kilaru, R., Kula, W., Lauer, G., Liu, L. Q., Murthy, S., Nowak, J., O’Sullivan, E. J., Parkin, S. S. P., Robertazzi, R. P., Rice, P. M., Sandhu, G., Topuria, T., Worledge, D. C.

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Magnonic Spin-Transfer Torque MRAM With Low Power, High Speed, and Error-Free Switching von Mojumder, Niladri N., Abraham, David W., Roy, Kaushik, Worledge, D. C.

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Impact of Ta Diffusion on the Perpendicular Magnetic Anisotropy of Ta/CoFeB/MgO von Miyakawa, N., Worledge, D. C., Kita, K.

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Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited) von Sun, J. Z., Trouilloud, P. L., Gajek, M. J., Nowak, J., Robertazzi, R. P., Hu, G., Abraham, D. W., Gaidis, M. C., Brown, S. L., O'Sullivan, E. J., Gallagher, W. J., Worledge, D. C.

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Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications von Safranski, Christopher, Hu, Guohan, Sun, Jonathan Z., Hashemi, Pouya, Brown, Stephen L., Buzi, Luxherta, D'Emic, Christopher P., Edwards, Eric R. J., Galligan, Eileen, Gottwald, Matthias G., Gunawan, Oki, Karimeddiny, Saba, Jung, Hyunsung, Kim, Juhyun, Latzko, Ken, Trouilloud, Philip L., Worledge, Daniel C.

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High-bias backhopping in nanosecond time-domain spin-torque switches of MgO-based magnetic tunnel junctions von Sun, J. Z., Gaidis, M. C., Hu, G., O'Sullivan, E. J., Brown, S. L., Nowak, J. J., Trouilloud, P. L., Worledge, D. C.

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Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy von Nowak, J J, Robertazzi, R P, Sun, J Z, Hu, G, Abraham, D W, Trouilloud, P L, Brown, S, Gaidis, M C, O'Sullivan, E J, Gallagher, W J, Worledge, D C

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A three-terminal spin-torque-driven magnetic switch von Sun, J. Z., Gaidis, M. C., O'Sullivan, E. J., Joseph, E. A., Hu, G., Abraham, D. W., Nowak, J. J., Trouilloud, P. L., Lu, Yu, Brown, S. L., Worledge, D. C., Gallagher, W. J.

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Thermally activated switching in spin-flop tunnel junctions von Korenivski, V., Worledge, D. C.

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