A new 'shift and ratio' method for MOSFET channel-length extraction von Taur, Y., Zicherman, D.S., Lombardi, D.R., Restle, P.J., Hsu, C.H., Nanafi, H.I., Wordeman, M.R., Davari, B., Shahidi, G.G.

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An investigation of steady-state velocity overshoot in silicon von Baccarani, G., Wordeman, M.R.

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High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level von Sai-Halasz, G.A., Wordeman, M.R., Kern, D.P., Rishton, S., Ganin, E.

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Transconductance degradation in thin-Oxide MOSFET's von Baccarani, G., Wordeman, M.R.

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Hot-electron-induced instability in 0.5- mu m p-channel MOSFETs patterned using synchrotron X-ray lithography von Hsu, C.C.-H., Wang, L.K., Wordeman, M.R., Ning, T.H.

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Design and experimental technology for 0.1-μm gate-length low-temperature operation FET's von SAI-HALASZ, G. A, WORDEMAN, M. R, CHANG, T. H. P, DENNARD, R. H, KERN, D. P, GANIN, E, RISHTON, S, ZICHERMAN, D. S, SCHMID, H, POLCARI, M. R, NG, H. Y, RESTLE, P. J

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Geometry effects in MOSFET channel length extraction algorithms von Wordeman, M.R., Sun, J.Y.-C., Laux, S.E.

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Generalized scaling theory and its application to a 1/4 micrometer MOSFET design von Baccarani, G, Wordeman, M R, Dennard, R H

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A high-performance 0.25- mu m CMOS technology. II. Technology von Davari, B., Chang, W.H., Petrillo, K.E., Wong, C.Y., Moy, D., Taur, Y., Wordeman, M.R., Sun, J.Y.-C., Hsu, C.C.-H., Polcari, M.R.

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Fault-tolerant designs for 256 Mb DRAM von Kirihata, T., Watanabe, Y., Hing Wong, DeBrosse, J.K., Yoshida, M., Kato, D., Fujii, S., Wordeman, M.R., Poechmueller, P., Parke, S.A., Asao, Y.

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Inverter performance of deep-submicrometer MOSFETs von Sai-Halasz, G.A., Wordeman, M.R., Kern, D.P., Rishton, S., Ganin, E., Ng, H.Y., Moy, D., Chang, T.H.P., Dennard, R.H.

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Process-design considerations for three dimensional memory integration von Iyer, S.S., Kirihata, T., Wordeman, M.R., Barth, J., Hannon, R.H., Malik, R.

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Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits von Sai-Halasz, G.A., Wordeman, M.R.

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Flexible test mode approach for 256-Mb DRAM von Kirihata, T., Hing Wong, DeBrosse, J.K., Watanabe, Y., Hara, T., Yoshida, M., Wordeman, M.R., Fujii, S., Asao, Y., Krsnik, B.

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A comprehensive study of hot-carrier instability in p- and n-type poly-Si gated MOSFET's von Hsu, C.C.-H., Duen-Shun Wen, Wordeman, M.R., Yuan Taur, Ning, T.H.

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A fully scaled submicrometer NMOS technology using direct-write E-beam lithography von Wordeman, M.R., Schweighart, A.M., Dennard, R.H., Sai-Halasz, G., Molzen, W.W.

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Quasi‐optical diplexer for millimeter wavelengths von Payne, J. M., Wordeman, M. R.

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On the accuracy of channel length characterization of LDD MOSFET's von Sun, J.Y.-C., Wordeman, M.R., Laux, S.E.

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Alpha-particle-induced soft error rate in VLSI circuits von Sai-Halasz, G.A., Wordeman, M.R., Dennard, R.H.

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A high-performance 0.25- mu m CMOS technology. I. Design and characterization von Chang, W.-H., Davari, B., Wordeman, M.R., Taur, Y., Hsu, C.C.-H., Rodriguez, M.D.

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